PROCEEDINGS VOLUME 1189
1989 MICROELECTRONIC INTEGRATED PROCESSING CONFERENCES | 10-13 OCTOBER 1989
Rapid Isothermal Processing
IN THIS VOLUME

0 Sessions, 19 Papers, 0 Presentations
All Papers  (19)
1989 MICROELECTRONIC INTEGRATED PROCESSING CONFERENCES
10-13 October 1989
Santa Clara, United States
All Papers
Proc. SPIE 1189, Rapid Thermal Multiprocessing For Micro Factories, 0000 (6 April 1990); doi: 10.1117/12.963953
Proc. SPIE 1189, Ultrashallow Diffused Emitter-Base Profiles For Bipolar Device Applications Using Rapid Thermal Processing, 0000 (6 April 1990); doi: 10.1117/12.963954
Proc. SPIE 1189, Processing And Patterning Of Thin Film Superconductors Formed By Metallo-Organic Deposition, 0000 (6 April 1990); doi: 10.1117/12.963955
Proc. SPIE 1189, Surface Radiation Characteristics In RTCVD Temperature Measurement/Control, 0000 (6 April 1990); doi: 10.1117/12.963956
Proc. SPIE 1189, Thermal And Stress Analysis Of Semiconductor Wafers In A Rapid Thermal Processing Oven, 0000 (6 April 1990); doi: 10.1117/12.963957
Proc. SPIE 1189, Temperature Uniformity In RTP Furnaces, 0000 (6 April 1990); doi: 10.1117/12.963958
Proc. SPIE 1189, Effect Of Silicon Emissivity On Temperature Measurement And Control In Rapid Thermal Processing, 0000 (6 April 1990); doi: 10.1117/12.963959
Proc. SPIE 1189, Emissivity Issues In Pyrometric Temperature Monitoring For RTP Systems, 0000 (6 April 1990); doi: 10.1117/12.963960
Proc. SPIE 1189, A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation, 0000 (6 April 1990); doi: 10.1117/12.963961
Proc. SPIE 1189, Temperature Non-Uniformities During Rapid Thermal Processing Of Patterned Wafers, 0000 (6 April 1990); doi: 10.1117/12.963962
Proc. SPIE 1189, High Quality Si and Si-based Heterostructures And Devices Produced By Rapid Thermal Chemical Vapor Deposition (RTCVD), 0000 (6 April 1990); doi: 10.1117/12.963963
Proc. SPIE 1189, RTP-CVD: A Single Wafer In-Situ Multiprocessing Manufacturing Technology For ULSI, 0000 (6 April 1990); doi: 10.1117/12.963964
Proc. SPIE 1189, The Application of Rapid Thermal Chemical Vapor Deposition of Doped-Thin Single Crystal Silicon for MOS and Bipolar Technologies., 0000 (6 April 1990); doi: 10.1117/12.963965
Proc. SPIE 1189, Recent Developments of Metal Ohmic Contacts to InP-Based Materials Formed by Rapid Thermal Processing, 0000 (6 April 1990); doi: 10.1117/12.963966
Proc. SPIE 1189, In Situ Reflectivity Measurement In A Rapid Isothermal Processor For Platinum Silicide Formation Kinetics Study, 0000 (6 April 1990); doi: 10.1117/12.963967
Proc. SPIE 1189, Bulk Material Analysis of Wafers Processed in RIP Round Robin, 0000 (6 April 1990); doi: 10.1117/12.963968
Proc. SPIE 1189, Ultrathin Reoxidized Nitrided Oxide Prepared by Rapid Isothermal Processing for Advanced MOS Devices, 0000 (6 April 1990); doi: 10.1117/12.963969
Proc. SPIE 1189, Fabrication of superior oxynitride ultrathin MOS gate dielectrics for ULSI technology by reactive rapid thermal processing, 0000 (6 April 1990); doi: 10.1117/12.963970
Proc. SPIE 1189, Characteristics of Reactively Evaporated and Rapid-Thermally Oxidized Yttrium Films on Silicon, 0000 (6 April 1990); doi: 10.1117/12.963971
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