Quantum Well Semiconductor Laser Devices
Proc. SPIE 1219, InGaAs-GaAs strained-layer quantum well heterostructure lasers, 0000 (1 May 1990); doi: 10.1117/12.18237
Proc. SPIE 1219, Characteristics of high-power, InGaAs/AlGaAs laser diodes, 0000 (1 May 1990); doi: 10.1117/12.18238
Proc. SPIE 1219, Operating characteristics of strained InGaAs/AlGaAs quantum well lasers, 0000 (1 May 1990); doi: 10.1117/12.18239
Proc. SPIE 1219, Strained-layer quantum well lasers grown by molecular beam epitaxy for longer wavelength high-speed applications, 0000 (1 May 1990); doi: 10.1117/12.18240
Proc. SPIE 1219, Monolithically stacked quantum well lasers, 0000 (1 May 1990); doi: 10.1117/12.18241
Proc. SPIE 1219, Low threshold current coplanar vertical injection laser diode for optoelectronic integrated circuits, 0000 (1 May 1990); doi: 10.1117/12.18242
High-Power Semiconductor Optical Sources: Single-Element Devices
Proc. SPIE 1219, High-power single emitters for coherent optical communication, 0000 (1 May 1990); doi: 10.1117/12.18243
Proc. SPIE 1219, High-power GaInAsP laser diodes on p-type substrate, 0000 (1 May 1990); doi: 10.1117/12.18244
Proc. SPIE 1219, Impact of optical coating on InP/InGaAsP laser-diode performance at high power and high temperature, 0000 (1 May 1990); doi: 10.1117/12.18245
Proc. SPIE 1219, Reliability characteristics of high-power laser diodes, 0000 (1 May 1990); doi: 10.1117/12.18246
Proc. SPIE 1219, High-power GaAlAs single-element lasers with nonabsorbing mirrors, 0000 (1 May 1990); doi: 10.1117/12.18247
Proc. SPIE 1219, Fundamental transverse mode 100-mW semiconductor laser with high reliability, 0000 (1 May 1990); doi: 10.1117/12.18248
Proc. SPIE 1219, 780-nm high-power laser diode fabricated by metal organic chemical vapor deposition technique, 0000 (1 May 1990); doi: 10.1117/12.18249
Proc. SPIE 1219, Reliability test of high-power semiconductor laser for intersatellite link, 0000 (1 May 1990); doi: 10.1117/12.18250
Proc. SPIE 1219, High-power InGaAsP/InP superluminescent diodes, 0000 (1 May 1990); doi: 10.1117/12.18251
High-Power Semiconductor Optical Sources: Large-Aperture Devices
Proc. SPIE 1219, Stabilized in-phase-mode operation from monolithic antiguided diode laser arrays, 0000 (1 May 1990); doi: 10.1117/12.18252
Proc. SPIE 1219, Coherent radiation from a broad-area semiconductor laser in an external cavity, 0000 (1 May 1990); doi: 10.1117/12.18253
Proc. SPIE 1219, Lateral mode controlled wide-stripe-lasers by modal reflector, 0000 (1 May 1990); doi: 10.1117/12.18254
Proc. SPIE 1219, High-power quasi-cw linear laser-diode arrays emitting in excess of 200 W of optical power, 0000 (1 May 1990); doi: 10.1117/12.18255
Proc. SPIE 1219, 10-W cw, 5000-hour-lifetime monolithic AlGaAs laser-diode arrays, 0000 (1 May 1990); doi: 10.1117/12.18256
Proc. SPIE 1219, 10-amplifier coherent array based on active-integrated optics, 0000 (1 May 1990); doi: 10.1117/12.18257
Proc. SPIE 1219, Failure mechanisms in monolithic AlGaAs laser devices, 0000 (1 May 1990); doi: 10.1117/12.18258
Surface-Emitting Lasers
Proc. SPIE 1219, Recent developments in surface-emitting distributed-feedback arrays, 0000 (1 May 1990); doi: 10.1117/12.18259
Proc. SPIE 1219, Coherent cw operation of 2-D grating surface-emitting diode laser arrays, 0000 (1 May 1990); doi: 10.1117/12.18260
Proc. SPIE 1219, Optical characteristics of multiple grating surface-emitting semiconductor lasers, 0000 (1 May 1990); doi: 10.1117/12.18261
Proc. SPIE 1219, Grating-coupled surface emitters: sensitivity to length-induced phase variations, 0000 (1 May 1990); doi: 10.1117/12.18262
Proc. SPIE 1219, High-power hybrid two-dimensional surface-emitting AlGaAs diode laser arrays, 0000 (1 May 1990); doi: 10.1117/12.18263
Proc. SPIE 1219, Mode stability and spectral properties of resonant periodic gain surface-emitting lasers, 0000 (1 May 1990); doi: 10.1117/12.18264
Proc. SPIE 1219, Fabrication of microlenses in compound semiconductors and monolithic integration with diode lasers, 0000 (1 May 1990); doi: 10.1117/12.18265
Semiconductor Laser Advanced Processing, Packaging, and High-Speed Technology
Proc. SPIE 1219, Recent developments in optoelectronic device processing, 0000 (1 May 1990); doi: 10.1117/12.18266
Proc. SPIE 1219, Improvement of high-power characteristics of 780-nm AlGaAs laser diode by (NH4)2S facet treatment, 0000 (1 May 1990); doi: 10.1117/12.18268
Proc. SPIE 1219, Effect of active layer doping on static and dynamic performance of 1.3-um InGaAsP lasers with semi-insulating current blocking layers, 0000 (1 May 1990); doi: 10.1117/12.18269
Proc. SPIE 1219, U-groove distributed-feedback lasers, 0000 (1 May 1990); doi: 10.1117/12.18270
Proc. SPIE 1219, Stackable wafer-thin coolers for high-power laser-diode arrays, 0000 (1 May 1990); doi: 10.1117/12.18271
Laser Diodes Operating in an External Optical Cavity
Proc. SPIE 1219, Nonlinear optical techniques for obtaining high brightness from diode lasers, 0000 (1 May 1990); doi: 10.1117/12.18272
Proc. SPIE 1219, Ultrabroadband tunable external-cavity quantum well lasers, 0000 (1 May 1990); doi: 10.1117/12.18273
Proc. SPIE 1219, External-cavity coherent operation of InGaAsP buried-hetereostructure laser array, 0000 (1 May 1990); doi: 10.1117/12.18274
Proc. SPIE 1219, Effects of liquid crystals on diffractive coupling in a diode laser external cavity, 0000 (1 May 1990); doi: 10.1117/12.18275
Proc. SPIE 1219, Low wavefront aberration microcollimated laser diode, 0000 (1 May 1990); doi: 10.1117/12.18276
Semiconductor Laser Modeling and Design
Proc. SPIE 1219, Design and optimization of high-frequency diode lasers, 0000 (1 May 1990); doi: 10.1117/12.18278
Proc. SPIE 1219, Experimental measurements of modal transients and theoretical thermal modeling of laser diodes, 0000 (1 May 1990); doi: 10.1117/12.18279
Proc. SPIE 1219, Polarization-dependent gain and gain saturation in strained semiconductor lasers, 0000 (1 May 1990); doi: 10.1117/12.18280
Proc. SPIE 1219, Mode control of broad-area semiconductor lasers using unstable resonators, 0000 (1 May 1990); doi: 10.1117/12.18281
Proc. SPIE 1219, Reflection, transmission, and scattering at an integrated diode laser-waveguide interface, 0000 (1 May 1990); doi: 10.1117/12.18282
Applications of Semiconductor Lasers
Proc. SPIE 1219, Diode laser radar: applications and technology, 0000 (1 May 1990); doi: 10.1117/12.18283
Proc. SPIE 1219, Applications of optical feedback in laser diodes, 0000 (1 May 1990); doi: 10.1117/12.18284
Proc. SPIE 1219, High-precision fiber-optic position sensing using diode laser radar techniques, 0000 (1 May 1990); doi: 10.1117/12.18285
Proc. SPIE 1219, Proposed ranging technique with coherent optical radiation from laser diode using phase shift method, 0000 (1 May 1990); doi: 10.1117/12.18286
Proc. SPIE 1219, Wavelength control of a diode laser for distance measuring interferometry, 0000 (1 May 1990); doi: 10.1117/12.18287
Proc. SPIE 1219, High-power laser diodes for volume applications, 0000 (1 May 1990); doi: 10.1117/12.18288
Proc. SPIE 1219, Switching technology from dc to GHz using 2-D semiconductor laser arrays, 0000 (1 May 1990); doi: 10.1117/12.18289
Proc. SPIE 1219, Differential absorption laser ranging at the oxygen A-band, 0000 (1 May 1990); doi: 10.1117/12.18290
High-Power Semiconductor Optical Sources: Large-Aperture Devices
Proc. SPIE 1219, Phaselocking of a two-dimensional laser array with random detuning of eigenfrequencies, 0000 (1 May 1990); doi: 10.1117/12.18291
Applications of Semiconductor Lasers
Proc. SPIE 1219, Light coupling between LD and optical fiber using high NA planar microlens, 0000 (1 May 1990); doi: 10.1117/12.18292
Surface-Emitting Lasers
Proc. SPIE 1219, Vertical cavity surface-emitting semiconductor lasers with injection laser pumping, 0000 (1 May 1990); doi: 10.1117/12.18293
Special Session: Miniature Visible Lasers
Proc. SPIE 1219, 670-nm transverse-mode stabilized InGaAlP laser diodes, 0000 (1 May 1990); doi: 10.1117/12.18294
Proc. SPIE 1219, Threshold current density dependence on p-doping in AlGaInP laser, 0000 (1 May 1990); doi: 10.1117/12.18295
Proc. SPIE 1219, Progress in self-locking, externally doubled diode lasers, 0000 (1 May 1990); doi: 10.1117/12.18296