PROCEEDINGS VOLUME 1264
MICROLITHOGRAPHY '90 | 4-8 MARCH 1990
Optical/Laser Microlithography III
MICROLITHOGRAPHY '90
4-8 March 1990
San Jose, CA, United States
Optical Processes I
Proc. SPIE 1264, Methods to print optical images at low-k1 factors, 0000 (1 June 1990); doi: 10.1117/12.20175
Proc. SPIE 1264, Phase-shifting mask and FLEX method for advanced photolithography, 0000 (1 June 1990); doi: 10.1117/12.20176
Proc. SPIE 1264, Considerations on the focus latitude for G-line and DUV resists, 0000 (1 June 1990); doi: 10.1117/12.20177
Optical Processes II
Proc. SPIE 1264, Assessment of high-contrast G- and I-line resists using high-numerical-aperture exposure tools, 0000 (1 June 1990); doi: 10.1117/12.20178
Proc. SPIE 1264, Characterization of an asymmetric nonlinear component of process induced distortion in thermally stressed silicon wafers, 0000 (1 June 1990); doi: 10.1117/12.20179
Proc. SPIE 1264, Deep-ultraviolet lithography for 500-nm devices, 0000 (1 June 1990); doi: 10.1117/12.20180
Advanced I-Line Technology
Proc. SPIE 1264, Image quality of higher NA I-line projection lens, 0000 (1 June 1990); doi: 10.1117/12.20181
Proc. SPIE 1264, High-numerical-aperture I-line stepper, 0000 (1 June 1990); doi: 10.1117/12.20183
Proc. SPIE 1264, 0.5-um photolithography using high-numerical-aperture I-line wafer steppers, 0000 (1 June 1990); doi: 10.1117/12.20184
Mask Technology
Proc. SPIE 1264, Dry etching for high-resolution maskmaking, 0000 (1 June 1990); doi: 10.1117/12.20185
Proc. SPIE 1264, 0.5-um optical mask process for 364-nm scanned laser lithography, 0000 (1 June 1990); doi: 10.1117/12.20186
Proc. SPIE 1264, New phase-shifting mask with highly transparent SiO2 phase shifters, 0000 (1 June 1990); doi: 10.1117/12.20187
Alignment Strategies
Proc. SPIE 1264, Precise alignment using optical phase-shifting technique, 0000 (1 June 1990); doi: 10.1117/12.20188
Proc. SPIE 1264, Modeling of optical alignment and metrology schemes used in integrated circuit manufacturing, 0000 (1 June 1990); doi: 10.1117/12.20189
Proc. SPIE 1264, Heterodyne holographic nanometer alignment for a half-micron wafer stepper, 0000 (1 June 1990); doi: 10.1117/12.20190
Proc. SPIE 1264, Evaluation of a silicon trench alignment target strategy, 0000 (1 June 1990); doi: 10.1117/12.20191
Alignment and Focusing Methods
Proc. SPIE 1264, Chip leveling and focusing with laser interferometry, 0000 (1 June 1990); doi: 10.1117/12.20192
Proc. SPIE 1264, 0.10-um overlay for DRAM production using step and scan, 0000 (1 June 1990); doi: 10.1117/12.20193
Proc. SPIE 1264, Enhanced structures for through-the-lens alignment with DUV lithography, 0000 (1 June 1990); doi: 10.1117/12.20194
Optical Processes II
Proc. SPIE 1264, Algorithm for optimizing stepper performance through image manipulation, 0000 (1 June 1990); doi: 10.1117/12.20195
Image and Process Modeling
Proc. SPIE 1264, Photolithography simulation on nonplanar substrates, 0000 (1 June 1990); doi: 10.1117/12.20196
Proc. SPIE 1264, Investigation of reflective notching with massively parallel simulation, 0000 (1 June 1990); doi: 10.1117/12.20197
Modeling and Alternative Imaging
Proc. SPIE 1264, Comprehensive 3-D notching simulator with nonplanar substrates, 0000 (1 June 1990); doi: 10.1117/12.20198
Proc. SPIE 1264, Microcircuit lithography using holographic imaging, 0000 (1 June 1990); doi: 10.1117/12.20199
Laser-Based Lithography I
Proc. SPIE 1264, Resolution performance of a 0.60-NA, 364-nm laser direct writer, 0000 (1 June 1990); doi: 10.1117/12.20200
Modeling and Alternative Imaging
Proc. SPIE 1264, Evaluating pattern transfer lenses for deep-UV laser-induced processes, 0000 (1 June 1990); doi: 10.1117/12.20201
Laser-Based Lithography I
Proc. SPIE 1264, Evaluation of resists using ArF excimer laser projection lithography, 0000 (1 June 1990); doi: 10.1117/12.20202
Proc. SPIE 1264, Effect of central obscuration on image formation in projection lithography, 0000 (1 June 1990); doi: 10.1117/12.20203
Proc. SPIE 1264, Advances in deep-UV lithography, 0000 (1 June 1990); doi: 10.1117/12.20204
Lasers for Lithography
Proc. SPIE 1264, High-repetition-rate KrF lithography excimer laser with narrow bandwidth below 2 pm, 0000 (1 June 1990); doi: 10.1117/12.20205
Proc. SPIE 1264, Measurements of beam characteristics relevant to DUV microlithography on a KrF excimer laser, 0000 (1 June 1990); doi: 10.1117/12.20206
Laser-Based Lithography II
Proc. SPIE 1264, Deep-UV wafer stepper with through-the-lens wafer to reticle alignment, 0000 (1 June 1990); doi: 10.1117/12.20207
Proc. SPIE 1264, Design and performance of a production-oriented deep-UV wafer stepper, 0000 (1 June 1990); doi: 10.1117/12.20208
Proc. SPIE 1264, Reduction lens and illumination system for deep-UV aligners, 0000 (1 June 1990); doi: 10.1117/12.20209
Proc. SPIE 1264, Characterization methods for excimer exposure of deep-UV pellicles, 0000 (1 June 1990); doi: 10.1117/12.20210
Image and Process Modeling
Proc. SPIE 1264, Modeling latent image formation in photolithography using the Helmholtz equation, 0000 (1 June 1990); doi: 10.1117/12.20211
Poster Session: Optical/Laser Lithography
Proc. SPIE 1264, Direct writing on structured substrate by pyrolytic laser deposition, 0000 (1 June 1990); doi: 10.1117/12.20212
Proc. SPIE 1264, Investigation of phase-conjugated stimulated Brillouin scattering at 248 nm for application to photolithography, 0000 (1 June 1990); doi: 10.1117/12.20213
Proc. SPIE 1264, Quantitative evaluation method for practical resolution by integration factor in optical lithography, 0000 (1 June 1990); doi: 10.1117/12.20214
Proc. SPIE 1264, Alignment performance of a 0.6-NA 364-nm laser direct writer, 0000 (1 June 1990); doi: 10.1117/12.20215
Proc. SPIE 1264, Optimal binary image design for optical lithography, 0000 (1 June 1990); doi: 10.1117/12.20216
Proc. SPIE 1264, New indexes of the 0.5-um resolution resist for optical lithography, 0000 (1 June 1990); doi: 10.1117/12.20218
Additional Paper
Proc. SPIE 1264, Image-height offset in TTL on-axis alignment method, 0000 (1 June 1990); doi: 10.1117/12.20219
Poster Session: Optical/Laser Lithography
Proc. SPIE 1264, Considering Babinet principle for optical lithography resolution limit exceeding classical resolving power, 0000 (1 June 1990); doi: 10.1117/12.20220
Lasers for Lithography
Proc. SPIE 1264, High-power and narrow-band excimer laser with a polarization-coupled resonator, 0000 (1 June 1990); doi: 10.1117/12.20221
Poster Session: Optical/Laser Lithography
Proc. SPIE 1264, Simulation and experimental results in O.6-um lithography using an I-line stepper, 0000 (1 June 1990); doi: 10.1117/12.20222
Image and Process Modeling
Proc. SPIE 1264, Simulation of scattering effects in photolithography, 0000 (1 June 1990); doi: 10.1117/12.20223
Mask Technology
Proc. SPIE 1264, Recent advances in prepellicle mask cleaning, 0000 (1 June 1990); doi: 10.1117/12.20224
Poster Session: Optical/Laser Lithography
Proc. SPIE 1264, Plasma etching of chrome masks using PBS resist, 0000 (1 June 1990); doi: 10.1117/12.20225
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