PROCEEDINGS VOLUME 1279
THE INTERNATIONAL CONGRESS ON OPTICAL SCIENCE AND ENGINEERING | 12-16 MARCH 1990
Laser-Assisted Processing II
IN THIS VOLUME

0 Sessions, 23 Papers, 0 Presentations
LCVD  (3)
THE INTERNATIONAL CONGRESS ON OPTICAL SCIENCE AND ENGINEERING
12-16 March 1990
The Hague, Netherlands
Fundamental Processes
Proc. SPIE 1279, Laser/matter interaction at intensities of 1012 W/cm2 and below, 0000 (1 August 1990); doi: 10.1117/12.20615
Proc. SPIE 1279, Scattering of electronically excited sulphur dioxide from graphite, 0000 (1 August 1990); doi: 10.1117/12.20616
Proc. SPIE 1279, Interaction between two light-induced atomic dipoles near a metal surface: the electric field at the atomic sites, 0000 (1 August 1990); doi: 10.1117/12.20617
Proc. SPIE 1279, ESR investigation of structure changes in quartz irradiated by CO2 laser, 0000 (1 August 1990); doi: 10.1117/12.20618
Proc. SPIE 1279, Optical characterization of the fog created by the impaction of a low shock wave with a liquid air interface, 0000 (1 August 1990); doi: 10.1117/12.20619
Ceramics and Polymers
Proc. SPIE 1279, Kinetic analysis of laser-induced reactions in polymer films, 0000 (1 August 1990); doi: 10.1117/12.20620
Proc. SPIE 1279, Simple analytic model including shielding by the plume during excimer laser ablation of polyimide, 0000 (1 August 1990); doi: 10.1117/12.20621
Proc. SPIE 1279, Processing of ceramics by excimer lasers, 0000 (1 August 1990); doi: 10.1117/12.20622
Proc. SPIE 1279, Synthesis of ultrafine ceramic powders by means of CO2 laser in a flow reactor, 0000 (1 August 1990); doi: 10.1117/12.20623
Proc. SPIE 1279, In-process clad quality monitoring using optical method, 0000 (1 August 1990); doi: 10.1117/12.20624
Ablation and Plasmas
Proc. SPIE 1279, Excimer-laser-produced plasma studies, 0000 (1 August 1990); doi: 10.1117/12.20625
Proc. SPIE 1279, Plasma formation during excimer laser irradiation of thin selenium films in air, 0000 (1 August 1990); doi: 10.1117/12.20626
Proc. SPIE 1279, Spectroscopic studies of iron plasmas induced by continuous high-power CO2 laser, 0000 (1 August 1990); doi: 10.1117/12.20627
Proc. SPIE 1279, Numerical investigation of the Knudsen-layer, appearing in the laser-induced evaporation of metals, 0000 (1 August 1990); doi: 10.1117/12.20628
Proc. SPIE 1279, Deposition of thin films by high-energy excimer laser ablation, 0000 (1 August 1990); doi: 10.1117/12.20629
Proc. SPIE 1279, Large-area silica films deposited on silicon substrates by a CO2 laser, 0000 (1 August 1990); doi: 10.1117/12.34713
Proc. SPIE 1279, Surface patterning by pulsed-laser-induced transfer of metals and compounds, 0000 (1 August 1990); doi: 10.1117/12.20631
LCVD
Proc. SPIE 1279, Formation of nickel silicides by excimer laser CVD of Ni(CO)4, 0000 (1 August 1990); doi: 10.1117/12.20632
Proc. SPIE 1279, ArF excimer laser photolysis of tetramethyltin Sn(CH3)4 probed by dye-laser-induced resonant multiphoton ionization, 0000 (1 August 1990); doi: 10.1117/12.20633
Proc. SPIE 1279, Nitride layer formation by multipulse excimer laser irradiation of solid samples, 0000 (1 August 1990); doi: 10.1117/12.20634
Microprocessing
Proc. SPIE 1279, Application to optical data storage of laser-induced synthesis of CuTe, 0000 (1 August 1990); doi: 10.1117/12.20635
Proc. SPIE 1279, Active optical systems for laser microprocessing, 0000 (1 August 1990); doi: 10.1117/12.20636
Proc. SPIE 1279, Excimer laser treatment of electrical contact materials, 0000 (1 August 1990); doi: 10.1117/12.20637
Back to Top