PROCEEDINGS VOLUME 1282
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS | 17-21 MARCH 1990
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS
17-21 March 1990
San Diego, CA, United States
Phonon Dynamics I
Proc. SPIE 1282, Correlation of hot carrier and hot phonon effects in semiconductors on a picosecond time scale, 0000 (1 August 1990); doi: 10.1117/12.20701
Proc. SPIE 1282, Effect of phonon confinement in quantum well systems, 0000 (1 August 1990); doi: 10.1117/12.20702
Phonon Dynamics II
Proc. SPIE 1282, Effect of hot phonons on the ultrafast relaxation of holes in GaAs, 0000 (1 August 1990); doi: 10.1117/12.20703
Proc. SPIE 1282, Nonequilibrium phonon effects on the transient expansion of photogenerated electron-hole plasmas, 0000 (1 August 1990); doi: 10.1117/12.20704
Ultrafast Nonlinear Dynamics and Lasers
Proc. SPIE 1282, Picosecond nonlinear optical characterization of GaAs at lamda=1.064 um, 0000 (1 August 1990); doi: 10.1117/12.20705
Phonon Dynamics II
Proc. SPIE 1282, Study of hot carrier relaxation in quantum wells by subpicosecond Raman scattering, 0000 (1 August 1990); doi: 10.1117/12.20706
Ultrafast Nonlinear Dynamics and Lasers
Proc. SPIE 1282, Femtosecond investigations of optical switching and X(3) in GaAs waveguides, 0000 (1 August 1990); doi: 10.1117/12.20707
Intervalley Dynamics
Proc. SPIE 1282, Gamma -> L intervalley and polar optic scattering times in GaAs from cw hot electron luminescence spectroscopy, 0000 (1 August 1990); doi: 10.1117/12.20708
Proc. SPIE 1282, Intervalley scattering times from the rigid-pseudoion method, 0000 (1 August 1990); doi: 10.1117/12.20709
Proc. SPIE 1282, Determination of the intervalley X6 --> Gamma6, L6 scattering time and the density of states effective mass of the X7 band in GaAs by picosecond time-resolved absorption spectroscopy, 0000 (1 August 1990); doi: 10.1117/12.20710
Proc. SPIE 1282, Role of electron-electron scattering on ultrafast probe phenomena of photoexcited carriers in GaAs, 0000 (1 August 1990); doi: 10.1117/12.20711
Carrier and Exciton Dynamics
Proc. SPIE 1282, Dynamics of nonthermal intrinsic excitons in GaAs quantum wells, 0000 (1 August 1990); doi: 10.1117/12.20712
Proc. SPIE 1282, Ultrafast laser probe of interband absorption edges in 3-D and 2-D semiconductors, 0000 (1 August 1990); doi: 10.1117/12.20713
Carrier Dynamics I
Proc. SPIE 1282, Electron-hole plasma thermalization in the GaAs/AlGaAs system: bulk, quantum wells, and superlattices, 0000 (1 August 1990); doi: 10.1117/12.20714
Proc. SPIE 1282, Direct measurement of ultrafast carrier processes in optical probing of GaInAs-type narrow band gap semiconductors, 0000 (1 August 1990); doi: 10.1117/12.20715
Carrier Dynamics II
Proc. SPIE 1282, Energy relaxation of hot holes in GaAs grown on Si, 0000 (1 August 1990); doi: 10.1117/12.20716
Proc. SPIE 1282, Simulation of ultrafast carrier relaxation processes in pulse/probe and dual pulse correlation probing of InGaAs-type narrow band gap semiconductors, 0000 (1 August 1990); doi: 10.1117/12.20717
Ultrafast Transport
Proc. SPIE 1282, Physical modeling of ultrafast electrical waveform generation and characterization, 0000 (1 August 1990); doi: 10.1117/12.20718
Proc. SPIE 1282, CO2-laser-driven avalanche ionization in InSb at liquid He temperatures, 0000 (1 August 1990); doi: 10.1117/12.20719
Proc. SPIE 1282, Theoretical studies of very high frequency quantum transport in nanostructures, 0000 (1 August 1990); doi: 10.1117/12.20720
Proc. SPIE 1282, Ultrafast laser probing in asymmetric quantum well structures placed in transverse magnetic field, 0000 (1 August 1990); doi: 10.1117/12.20721
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