PROCEEDINGS VOLUME 1283
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS | 17-21 MARCH 1990
Quantum Well and Superlattice Physics III
IN THIS VOLUME

0 Sessions, 37 Papers, 0 Presentations
Coupled QWs  (8)
Miscellaneous  (13)
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS
17-21 March 1990
San Diego, CA, United States
Coupled QWs
Proc. SPIE 1283, Optical detection of resonant tunneling in GaAs/AlAs superlattices, 0000 (1 October 1990); doi: 10.1117/12.20723
Resonant Tunneling
Proc. SPIE 1283, Charge build-up, intrinsic bistability, and magnetic field effects in double-barrier heterostructures, 0000 (1 October 1990); doi: 10.1117/12.20724
Proc. SPIE 1283, Evidence of hole tunneling in a double-barrier resonant tunneling structure obtained by time-resolved photoluminescence, 0000 (1 October 1990); doi: 10.1117/12.20725
Proc. SPIE 1283, Hole tunneling in GaAs/AlGaAs heterostructures: coherent versus incoherent resonant tunneling, 0000 (1 October 1990); doi: 10.1117/12.20726
Proc. SPIE 1283, Electric and magnetic field study of spacer layer thickness effects in A1GaAs/InGaAs resonant tunneling diodes, 0000 (1 October 1990); doi: 10.1117/12.20727
Proc. SPIE 1283, Miniband transport in GaAs-AlAs superlattices, 0000 (1 October 1990); doi: 10.1117/12.20728
Proc. SPIE 1283, Investigation of LP-MOCVD-grown GaAs-GaInP multiquantum wells by reflectance anistropy, 0000 (1 October 1990); doi: 10.1117/12.20730
Interconduction Subband Transitions
Proc. SPIE 1283, Observation of optically pumped intersubband emission from quantum wells, 0000 (1 October 1990); doi: 10.1117/12.20731
Proc. SPIE 1283, Long-wavelength GaAs quantum-well IR detectors: low-temperature performance characteristics, 0000 (1 October 1990); doi: 10.1117/12.20733
Optical Properties
Proc. SPIE 1283, Quantum-well electrorefraction and optical waveguide device applications, 0000 (1 October 1990); doi: 10.1117/12.20734
Proc. SPIE 1283, N-i-p-i based new concept for optical logic gates, 0000 (1 October 1990); doi: 10.1117/12.20735
Proc. SPIE 1283, Large optical nonlinearities in novel semiconductor superlattices, 0000 (1 October 1990); doi: 10.1117/12.20736
Coupled QWs
Proc. SPIE 1283, Physics of coupled double quantum wells, 0000 (1 October 1990); doi: 10.1117/12.20739
Proc. SPIE 1283, Analysis of exciton behavior in biased coupled double quantum wells by time-dependent methods, 0000 (1 October 1990); doi: 10.1117/12.20740
Proc. SPIE 1283, Excitons in resonantly coupled quantum wells, 0000 (1 October 1990); doi: 10.1117/12.20742
Proc. SPIE 1283, Intersubband relaxation of hot carriers in coupled quantum wells, 0000 (1 October 1990); doi: 10.1117/12.20743
Proc. SPIE 1283, Optical blue shift in a double quantum-well structure induced by long-wavelength radiation, 0000 (1 October 1990); doi: 10.1117/12.20744
Proc. SPIE 1283, Optoelectronic studies of an electrically tunable infrared detector, 0000 (1 October 1990); doi: 10.1117/12.20745
Proc. SPIE 1283, Delocalization of the excitons via the X-valley in GaAs/A1As quantum wells, 0000 (1 October 1990); doi: 10.1117/12.20746
Strained-Layer Superlattices
Proc. SPIE 1283, Electronic structure and optical properties of strained-layer superlattices, 0000 (1 October 1990); doi: 10.1117/12.20747
Proc. SPIE 1283, Photoluminescence analysis of ultrathin quantum wells, 0000 (1 October 1990); doi: 10.1117/12.20749
Proc. SPIE 1283, PIN photocurrent studies of monolayer SimGen superlattices, 0000 (1 October 1990); doi: 10.1117/12.20750
Proc. SPIE 1283, Study of the band offset in InxGa1-xAs/GaAs system using photoreflectance of single quantum wells, 0000 (1 October 1990); doi: 10.1117/12.20751
Miscellaneous
Proc. SPIE 1283, MBE growth and electronic properties of planar superlattices consisting of grid-inserted heterostructures, 0000 (1 October 1990); doi: 10.1117/12.20752
Proc. SPIE 1283, Anomalies in the resonant magnetopolaron region for confined impurities in multiple quantum-well structures, 0000 (1 October 1990); doi: 10.1117/12.20753
Proc. SPIE 1283, Bound quantum states in crossed-wire systems, 0000 (1 October 1990); doi: 10.1117/12.20754
Proc. SPIE 1283, Optical phonons and electronic properties in double heterostructures, 0000 (1 October 1990); doi: 10.1117/12.20755
Proc. SPIE 1283, Influences of resonantly accumulated free electrons on optical absorption and emission in biased double-barrier resonant tunnelling structures, 0000 (1 October 1990); doi: 10.1117/12.20756
Proc. SPIE 1283, Optoelectronic properties of Si/Ge superlattices, 0000 (1 October 1990); doi: 10.1117/12.20757
Proc. SPIE 1283, First observation of 2P-magnetoexcitons in GaAs/AlGaAs multiple quantum wells via two-photon absorption processes, 0000 (1 October 1990); doi: 10.1117/12.20758
Proc. SPIE 1283, Longitudinal Coulomb attraction in coupled quantum wells, 0000 (1 October 1990); doi: 10.1117/12.20759
Proc. SPIE 1283, Gain and strong-signal saturation of photoexcited quantum-well structures, 0000 (1 October 1990); doi: 10.1117/12.20760
Proc. SPIE 1283, Studies of electronic structures of GaAs/AlAs superlattices by photoluminescence under hydrostatic pressure, 0000 (1 October 1990); doi: 10.1117/12.20761
Proc. SPIE 1283, Subband-dispersion and subband-mixing effects on excitonic spectra in thin-barrier superlattices, 0000 (1 October 1990); doi: 10.1117/12.20762
Proc. SPIE 1283, Improved design of AlAs/GaAs resonant tunneling diodes, 0000 (1 October 1990); doi: 10.1117/12.20763
Proc. SPIE 1283, Optical nonlinearities of GaAs/Ga1-xAlxAs superlattices, 0000 (1 October 1990); doi: 10.1117/12.20764
Resonant Tunneling
Proc. SPIE 1283, Novel InAs/GaSb/AlSb tunnel structures, 0000 (1 October 1990); doi: 10.1117/12.20765
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