PROCEEDINGS VOLUME 1284
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS | 17-21 MARCH 1990
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
IN THIS VOLUME

0 Sessions, 30 Papers, 0 Presentations
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS
17-21 March 1990
San Diego, CA, United States
Quantum Structures I
Proc. SPIE 1284, Individual defect dynamics and quantum-transport effects in metal nanobridges, 0000 (1 October 1990); doi: 10.1117/12.20767
Proc. SPIE 1284, Quantum dots: electrons in a new dimension, 0000 (1 October 1990); doi: 10.1117/12.20768
Proc. SPIE 1284, Observations of quantum-interference effects in lateral surface superlattices, 0000 (1 October 1990); doi: 10.1117/12.20769
Proc. SPIE 1284, Quantum-electron waveguides: bends, constrictions, and cavities, 0000 (1 October 1990); doi: 10.1117/12.20770
Proc. SPIE 1284, Scaling of transconductance in ultra-submicron GaAs MESFETs and HEMTs, 0000 (1 October 1990); doi: 10.1117/12.20771
Proc. SPIE 1284, Application of a mode-matching technique to quantum-wire transitions and discontinuities, 0000 (1 October 1990); doi: 10.1117/12.20772
Proc. SPIE 1284, Novel mesoscopic superlattice in a ballistic constriction, 0000 (1 October 1990); doi: 10.1117/12.20773
Quantum Structures and Devices
Proc. SPIE 1284, Advances in the processing of quantum-coupled devices, 0000 (1 October 1990); doi: 10.1117/12.20774
Proc. SPIE 1284, Reduction of mesoscopic conductance fluctuations by a magnetic field, 0000 (1 October 1990); doi: 10.1117/12.20775
Proc. SPIE 1284, Electron-waveguide transmission resonance at a defect, 0000 (1 October 1990); doi: 10.1117/12.20777
Proc. SPIE 1284, Novel electron-diffraction transistor, 0000 (1 October 1990); doi: 10.1117/12.20778
Proc. SPIE 1284, Theory of ballistic electron transport through parallel nanoconstrictions, 0000 (1 October 1990); doi: 10.1117/12.20779
Proc. SPIE 1284, Einstein relation in quantum wires of small-gap materials in the presence of crossed electric and magnetic fields, 0000 (1 October 1990); doi: 10.1117/12.20780
Nanofabrication
Proc. SPIE 1284, In-situ nanostructure fabrication using finely focused ion beams, 0000 (1 October 1990); doi: 10.1117/12.20782
Proc. SPIE 1284, Fabrication of GaAs nanometer scale structures by dry etching, 0000 (1 October 1990); doi: 10.1117/12.20783
Proc. SPIE 1284, Ion etching of ultranarrow structures, 0000 (1 October 1990); doi: 10.1117/12.20784
Proc. SPIE 1284, Microfabrication below 10 nm, 0000 (1 October 1990); doi: 10.1117/12.20785
Proc. SPIE 1284, Nanostructures under quantum-Hall conditions, 0000 (1 October 1990); doi: 10.1117/12.20786
Quantum Structures and Devices
Proc. SPIE 1284, Effects of inversion asymmetry on GaAs quantum wires, 0000 (1 October 1990); doi: 10.1117/12.20787
Interfacial Properties
Proc. SPIE 1284, Atomic scale imaging of the structure and chemistry of semiconductor interfaces by Z-contrast stem, 0000 (1 October 1990); doi: 10.1117/12.20788
Proc. SPIE 1284, Interface structural characterization of strained-layer (001) SimGen superlattices by Raman spectroscopy, 0000 (1 October 1990); doi: 10.1117/12.20790
Proc. SPIE 1284, Quantum-well width determination using RHEED oscillations, 0000 (1 October 1990); doi: 10.1117/12.20791
Proc. SPIE 1284, Interface structure during silicon oxidation, 0000 (1 October 1990); doi: 10.1117/12.20792
Bulk Defect Properties
Proc. SPIE 1284, Effects of growth direction on SiGe/Si heteroepitaxy, 0000 (1 October 1990); doi: 10.1117/12.20793
Proc. SPIE 1284, Microstructure-property studies for semiconductor interfaces using high-resolution electron microscopy, 0000 (1 October 1990); doi: 10.1117/12.20794
Proc. SPIE 1284, Temperature dependence of electron beam induced current and cathodoluminescence contrast of dislocations in GaAs, 0000 (1 October 1990); doi: 10.1117/12.20795
Proc. SPIE 1284, Correlation of electrical and structural microanalysis of dendritic web silicon, 0000 (1 October 1990); doi: 10.1117/12.20796
Proc. SPIE 1284, Comparison of electrical and optical characterization in Cu-gettered, semi-insulating GaAs, 0000 (1 October 1990); doi: 10.1117/12.20797
Additional Paper
Proc. SPIE 1284, X-ray and scanning electron microscope studies on electrodeposited ZnCdS semiconductor alloys, 0000 (1 October 1990); doi: 10.1117/12.20798
Quantum Structures and Devices
Proc. SPIE 1284, Spontaneous low-frequency resistance switching noise in a narrow MODFET, 0000 (1 October 1990); doi: 10.1117/12.20800
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