PROCEEDINGS VOLUME 1285
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS | 17-21 MARCH 1990
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS
17-21 March 1990
San Diego, CA, United States
In-Situ Monitoring/Modification and Growth
Proc. SPIE 1285, Optical techniques for in-situ analysis and control of semiconductor crystal growth, 0000 (1 October 1990); doi: 10.1117/12.20801
Proc. SPIE 1285, Photoreflectance for in-situ monitoring of thin-film growth, 0000 (1 October 1990); doi: 10.1117/12.20802
Proc. SPIE 1285, Application of x-ray scattering to the in-situ study of organometallic vapor phase epitaxy, 0000 (1 October 1990); doi: 10.1117/12.20803
Proc. SPIE 1285, Temporal behavior of RHEED intensity oscillations during molecular beam epitaxial growth of GaAs and AlGaAs on (111)B GaAs substrates, 0000 (1 October 1990); doi: 10.1117/12.20804
Proc. SPIE 1285, Role of point defect diffusion and recombination in low-temperature growth of semiconductor heterostructures using low-energy ion beams, 0000 (1 October 1990); doi: 10.1117/12.20805
Proc. SPIE 1285, Experimental studies of growth kinetics of silicon by remote plasma-enhanced chemical vapor deposition at low temperatures, 0000 (1 October 1990); doi: 10.1117/12.20806
Graded Potentials and Unusual Systems
Proc. SPIE 1285, Wide graded potential wells: growth, electrical properties and theoretical results, 0000 (1 October 1990); doi: 10.1117/12.20808
Proc. SPIE 1285, Band-gap engineering of III-V semiconductors by MBE using electron beam evaporation of Group III metals, 0000 (1 October 1990); doi: 10.1117/12.20809
Proc. SPIE 1285, Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison, 0000 (1 October 1990); doi: 10.1117/12.20810
Proc. SPIE 1285, Growth and characterization of organic semiconductor heterojunctions and multiple quantum wells, 0000 (1 October 1990); doi: 10.1117/12.20811
Strained Systems
Proc. SPIE 1285, Chemical beam epitaxial growth of GaAs and InAs, 0000 (1 October 1990); doi: 10.1117/12.20812
Proc. SPIE 1285, Growth of InAs on GaAs (001) by migration-enhanced epitaxy, 0000 (1 October 1990); doi: 10.1117/12.20813
Proc. SPIE 1285, Characterization of InGaAs strained layers on GaAs: comparison of dislocation densities with device performance, 0000 (1 October 1990); doi: 10.1117/12.20814
Proc. SPIE 1285, InAs/Ga1-xInxSb superlattices for infrared applications, 0000 (1 October 1990); doi: 10.1117/12.20815
Patterned Growth
Proc. SPIE 1285, Interfacet migration and defect formation in heteroepitaxy on patterned substrates: AlGaAs and InGaAs on GaAs (100) in MBE, 0000 (1 October 1990); doi: 10.1117/12.20817
Proc. SPIE 1285, Spontaneous selective epitaxial growth of compositionally modulated AlGaAs with an orientation-dependent band gap, 0000 (1 October 1990); doi: 10.1117/12.20819
SI-Based Systems
Proc. SPIE 1285, Effects of patterning and thermal annealing on the crystalline quality of GaAs grown on Si by MBE, 0000 (1 October 1990); doi: 10.1117/12.20820
Proc. SPIE 1285, Low-temperature Si in-situ cleaning and homoepitaxy by remote plasma-enhanced chemical vapor deposition, 0000 (1 October 1990); doi: 10.1117/12.20821
Proc. SPIE 1285, Measurement of the strain dependence of the Si/Ge (100) valence band offset, 0000 (1 October 1990); doi: 10.1117/12.20822
Proc. SPIE 1285, Defect structures in MBE grown GaAs on Si, 0000 (1 October 1990); doi: 10.1117/12.20823
Joint Session on High TC Films
Proc. SPIE 1285, Ion beam codeposition of HTSC films on SrTiO3 and ITO/Si, 0000 (1 October 1990); doi: 10.1117/12.20824
Proc. SPIE 1285, Pulsed excimer laser deposition of high Tc superconductor thin films on Si with and without oxide barrier, 0000 (1 October 1990); doi: 10.1117/12.20826
Proc. SPIE 1285, Influence of rapid thermal annealing parameters on properties of YBaCuO thin films sputtered on silicon-based substrates, 0000 (1 October 1990); doi: 10.1117/12.20827
Proc. SPIE 1285, Plasma luminescence spectroscopy for sputtering growth of high Tc superconductors, 0000 (1 October 1990); doi: 10.1117/12.20828
Strained Systems
Proc. SPIE 1285, Band alignment of Zn1-xCdxTe/ZnTe and ZnTe1-xSex/ZnTe strained layer superlattices, 0000 (1 October 1990); doi: 10.1117/12.20829
Proc. SPIE 1285, Growth of ZnTe and ZnSexTe1-x epilayers and superlattices on GaSb, 0000 (1 October 1990); doi: 10.1117/12.20830
Joint Session on High TC Films
Proc. SPIE 1285, Molecular beam epitaxy: a path to novel high Tc superconductors?, 0000 (1 October 1990); doi: 10.1117/12.20831
Proc. SPIE 1285, Barium diffusion in metallo-organic solution deposited barrier layers and Y1Ba2Cu3O7-x films, 0000 (1 October 1990); doi: 10.1117/12.20832
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