PROCEEDINGS VOLUME 1286
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS | 17-21 MARCH 1990
Modulation Spectroscopy
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS
17-21 March 1990
San Diego, CA, United States
Thin Films and Heterostructures
Proc. SPIE 1286, Modulation spectroscopy of semiconductor materials, interfaces, and microstructures: an overview, 0000 (1 August 1990); doi: 10.1117/12.20833
Proc. SPIE 1286, Optical anisotropies in electromodulation, 0000 (1 August 1990); doi: 10.1117/12.20834
Proc. SPIE 1286, Discussion of modulation mechanisms in electron-beam electroreflectance and comparison to alternative modulation techniques, 0000 (1 August 1990); doi: 10.1117/12.20835
Proc. SPIE 1286, Photoreflectance and photoluminescence study of defect passivation by hydrogen in GaAlAs/GaAs/GaAs heterostructures, 0000 (1 August 1990); doi: 10.1117/12.20836
Proc. SPIE 1286, Photoreflectance characterization of built-in potential in MBE-produced As-grown GaAs surface, 0000 (1 August 1990); doi: 10.1117/12.20837
Proc. SPIE 1286, Photoreflectance measurements of indium content in semi-insulating indium-alloyed GaAs bulk substrates, 0000 (1 August 1990); doi: 10.1117/12.20838
Proc. SPIE 1286, Characterization of OMVPE-grown AlGaInP by optical spectroscopy, 0000 (1 August 1990); doi: 10.1117/12.20839
Reflectance Difference Spectroscopy and Scanning Ellipsometry
Proc. SPIE 1286, Some specific examples of thermoreflectance investigation, 0000 (1 August 1990); doi: 10.1117/12.20840
Proc. SPIE 1286, Reflection difference spectroscopy for MBE and OMCVD growth, 0000 (1 August 1990); doi: 10.1117/12.20841
Proc. SPIE 1286, Spectral ellipsometry of semiconductors and semiconductor structures, 0000 (1 August 1990); doi: 10.1117/12.20842
Proc. SPIE 1286, Photoreflectance at elevated temperatures, 0000 (1 August 1990); doi: 10.1117/12.20844
Proc. SPIE 1286, Differential reflectance spectroscopy of semiconductors, 0000 (1 August 1990); doi: 10.1117/12.20845
Proc. SPIE 1286, Differential reflection spectroscopy: a versatile modulation technique for the study of the electronic properties of alloys, semiconductors, and thin films, 0000 (1 August 1990); doi: 10.1117/12.20846
Quantum Wells and Superlattices I
Proc. SPIE 1286, Mechanisms of photoreflectance from superlattices and quantum wells, 0000 (1 August 1990); doi: 10.1117/12.20847
Proc. SPIE 1286, Angle dependence of photoreflectance on GaAs multiple quantum wells, 0000 (1 August 1990); doi: 10.1117/12.20848
Proc. SPIE 1286, Photoreflectance studies of electronic transitions in quantum well structures under high presure, 0000 (1 August 1990); doi: 10.1117/12.20849
Proc. SPIE 1286, Modulated reflection and absorption spectroscopies of strained InGaAs/GaAs multiple quantum wells, 0000 (1 August 1990); doi: 10.1117/12.20850
Proc. SPIE 1286, Photoreflectance studies of InGaAs/InP superlattices, 0000 (1 August 1990); doi: 10.1117/12.20851
Proc. SPIE 1286, Temperature dependence of the energy gap of (GaAs)n/(AlAs)n superlattices, 0000 (1 August 1990); doi: 10.1117/12.20852
Quantum Wells and Superlattices II
Proc. SPIE 1286, Absorption and electroabsorption spectra of InGaAs/InAlAs quantum wells and superlattices, 0000 (1 August 1990); doi: 10.1117/12.20854
Proc. SPIE 1286, Resonance Raman scattering in semiconductors and semiconductor microstructures, 0000 (1 August 1990); doi: 10.1117/12.20855
Proc. SPIE 1286, Direct and indirect transitions in (GaAs)n/(AlAs)n superlattices with n=1-15, 0000 (1 August 1990); doi: 10.1117/12.20856
Proc. SPIE 1286, Piezoreflectance investigations of narrow-barrier single quantum wells, 0000 (1 August 1990); doi: 10.1117/12.20857
Proc. SPIE 1286, Study of GaAs/AlGaAs and InGaAs/InP quantum well structures using low-field transverse electroreflectance, 0000 (1 August 1990); doi: 10.1117/12.20858
Strained Layer and Doping Superlattices
Proc. SPIE 1286, Electronic transitions in a Ge-rich strain-symmetrized Si8Ge32 superlattice measured by photoreflectance spectroscopy, 0000 (1 August 1990); doi: 10.1117/12.20860
Proc. SPIE 1286, Evidence for new optical transitions in short-period Si/Ge superlattices from electron-beam electroreflectance measurements, 0000 (1 August 1990); doi: 10.1117/12.20861
Proc. SPIE 1286, Electroabsorption study of lattice mismatch in InGaAsP/InP heterostructures, 0000 (1 August 1990); doi: 10.1117/12.20862
Proc. SPIE 1286, Photoreflectance of GaAs/AlGaAs hetero n-i-p-i structures, 0000 (1 August 1990); doi: 10.1117/12.20863
Proc. SPIE 1286, Photoreflectance characterization of delta-doped p-GaAs, 0000 (1 August 1990); doi: 10.1117/12.20864
Proc. SPIE 1286, Electromodulation and photomodulation spectroscopy of long-period doping superlattices, 0000 (1 August 1990); doi: 10.1117/12.20865
Proc. SPIE 1286, Determination of the electric field in the Ga1-xAlxAs/GaAs heterojunctions from the Franz-Keldysh oscillations by photoreflectance spectroscopy, 0000 (1 August 1990); doi: 10.1117/12.20866
Device Applications
Proc. SPIE 1286, Photoreflectance of doped GaAs beyond the band gap, 0000 (1 August 1990); doi: 10.1117/12.20867
Strained Layer and Doping Superlattices
Proc. SPIE 1286, Dynamic Stark effect in semiconductors: high-speed modulation, 0000 (1 August 1990); doi: 10.1117/12.20868
Device Applications
Proc. SPIE 1286, Characterization of InGaAs/InGaAsP broad-area quantum well lasers, 0000 (1 August 1990); doi: 10.1117/12.20869
Proc. SPIE 1286, Photoreflectance of GaAs/Ga1-xAlxAs heterojunction bipolar transistor structures, 0000 (1 August 1990); doi: 10.1117/12.20870
Thin Films and Heterostructures
Proc. SPIE 1286, Photoreflectance surface characterization of InP:Fe substrates, 0000 (1 August 1990); doi: 10.1117/12.20873
Quantum Wells and Superlattices II
Proc. SPIE 1286, Determination of electronic structure of Ge-Si nanostructures by electroreflectance spectroscopy, 0000 (1 August 1990); doi: 10.1117/12.20874
Reflectance Difference Spectroscopy and Scanning Ellipsometry
Proc. SPIE 1286, Optical transitions in Si:Ge monolayer superlattices from derivative ellipsometry spectra, 0000 (1 August 1990); doi: 10.1117/12.20875
Proc. SPIE 1286, Developments in electroreflectance lineshape theory, 0000 (1 August 1990); doi: 10.1117/12.20876
Back to Top