PROCEEDINGS VOLUME 1288
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS | 17-21 MARCH 1990
High-Speed Electronics and Device Scaling
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS TOWARD DEVICES APPLICATIONS
17-21 March 1990
San Diego, CA, United States
Opening Session
Proc. SPIE 1288, V- and W-band low-noise InAlAs/InGaAs/InP HEMTs and amplifiers, 0000 (1 August 1990); doi: 10.1117/12.20902
Proc. SPIE 1288, GaAs heterojunction bipolar transistor device and IC technology for high-performance analog/microwave, digital, and A/D conversion applications, 0000 (1 August 1990); doi: 10.1117/12.20903
Proc. SPIE 1288, Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15-um gate length, 0000 (1 August 1990); doi: 10.1117/12.20904
Proc. SPIE 1288, Device-scaling constraints based upon delay-time arguments, 0000 (1 August 1990); doi: 10.1117/12.20905
Heterojunction Bipolar Transistors (HBTs)
Proc. SPIE 1288, Characteristics of AlGaAs/GaAs thin-emitter heterojunction bipolar transistors, 0000 (1 August 1990); doi: 10.1117/12.20906
Proc. SPIE 1288, Improved AlInAs/GaInAs HBTs for high-speed circuits, 0000 (1 August 1990); doi: 10.1117/12.20907
Proc. SPIE 1288, Extended velocity overshoot in InGaAs collectors for high-speed heterojunction bipolar transistors, 0000 (1 August 1990); doi: 10.1117/12.20908
Proc. SPIE 1288, Effect of InAlAs emitter on the microwave performance of InAlAs/InGaAs abrupt npn heterojunction bipolar transistor, 0000 (1 August 1990); doi: 10.1117/12.20909
Proc. SPIE 1288, Demonstration of a monolithic npn and pnp complementary HBT technology, 0000 (1 August 1990); doi: 10.1117/12.20910
Proc. SPIE 1288, AlGaAs/GaAs pnp HBTs with high fmax and ft, 0000 (1 August 1990); doi: 10.1117/12.20911
Proc. SPIE 1288, Microwave power and efficiency performance of AlGaAs/GaAs self-aligned HBTs, 0000 (1 August 1990); doi: 10.1117/12.20912
Electron Quantum and Transport Structures
Proc. SPIE 1288, High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system, 0000 (1 August 1990); doi: 10.1117/12.20913
Proc. SPIE 1288, Self-aligned resonant tunneling-diode finger structure for high cut-off frequency and device integration, 0000 (1 August 1990); doi: 10.1117/12.20914
Proc. SPIE 1288, Resonant-tunneling diode stability and its consequences for high-frequency operation, 0000 (1 August 1990); doi: 10.1117/12.20915
Proc. SPIE 1288, Temperature characteristics of resonant-tunneling devices, 0000 (1 August 1990); doi: 10.1117/12.20916
Proc. SPIE 1288, Realistic band structure models for GaAs/AlAs quantum well diodes, 0000 (1 August 1990); doi: 10.1117/12.20917
Proc. SPIE 1288, Planar-doped structures by atomic layer epitaxy, 0000 (1 August 1990); doi: 10.1117/12.20918
Proc. SPIE 1288, Ultra-submicrometer microwave GaAs MESFETs and HEMTs, 0000 (1 August 1990); doi: 10.1117/12.20919
Proc. SPIE 1288, Current-voltage characteristics of MBE-grown strained Si1-xGex/Si heterojunction diodes and their temperature dependence, 0000 (1 August 1990); doi: 10.1117/12.20920
Modulation Doped Field Effect Transistors (Modfets)
Proc. SPIE 1288, Optimization of modulation doped FET structures, 0000 (1 August 1990); doi: 10.1117/12.20921
Proc. SPIE 1288, Scaling of parasitics in mm-wave MODFETs, 0000 (1 August 1990); doi: 10.1117/12.20922
Proc. SPIE 1288, Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs, 0000 (1 August 1990); doi: 10.1117/12.20923
Proc. SPIE 1288, Scaling of MESFETs and HEMTs at 0.1-um gate length, 0000 (1 August 1990); doi: 10.1117/12.20924
Proc. SPIE 1288, Scaling issues for ultra-high-speed HEMTs, 0000 (1 August 1990); doi: 10.1117/12.20925
Proc. SPIE 1288, Cryogenic noise performance of OMVPE-grown InGaAs/InP MODFET, 0000 (1 August 1990); doi: 10.1117/12.20926
Proc. SPIE 1288, P heterostructure field effect transistors, 0000 (1 August 1990); doi: 10.1117/12.20927
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