PROCEEDINGS VOLUME 1362
PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS | OCT 28 - NOV 2 1990
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS
Oct 28 - Nov 2 1990
Aachen, Germany
Visible, Infrared, and Far Infrared Sources
Proc. SPIE 1362, Surface plasmon enhanced light emission in GaAs/AlGaAs light emitting diodes, 0000 (1 February 1991); doi: 10.1117/12.24442
Proc. SPIE 1362, High-efficiency vertical-cavity lasers and modulators, 0000 (1 February 1991); doi: 10.1117/12.24443
Optoelectronic Quantum Devices
Proc. SPIE 1362, New materials for high-performance III-V ICs and OEICs: an industrial approach, 0000 (1 February 1991); doi: 10.1117/12.24446
Physics and Applications of Hight Tc Superconducting Materials
Proc. SPIE 1362, High-Tc superconductors, physics, and applications, 0000 (1 February 1991); doi: 10.1117/12.24447
Proc. SPIE 1362, Superconducting YBa2Cu307 films for novel optoelectronic device structures, 0000 (1 February 1991); doi: 10.1117/12.24448
Proc. SPIE 1362, Thin films of YBaCuO for electronic applications, 0000 (1 February 1991); doi: 10.1117/12.24449
Proc. SPIE 1362, Growth and properties of YBCO thin films by metal-organic chemical vapor deposition and plasma-enhanced MOCVD, 0000 (1 February 1991); doi: 10.1117/12.24457
Photodectors and Modulators
Proc. SPIE 1362, Long-wavelength GaAs quantum-well infrared photodetectors, 0000 (1 February 1991); doi: 10.1117/12.24489
Electronic Properties of Heterostructures
Proc. SPIE 1362, Corbino-capacitance technique for contactless measurements on conducting layers: application to persistent photoconductivity, 0000 (1 February 1991); doi: 10.1117/12.24502
Proc. SPIE 1362, Modulation doping and delta doping of III-V compound semiconductors, 0000 (1 February 1991); doi: 10.1117/12.24504
Proc. SPIE 1362, Quasi-three-dimensional electron systems and superlattices in wide parabolic wells: fabrication and physics, 0000 (1 February 1991); doi: 10.1117/12.24505
Transport Phenomena in Hetrostructures and Quantum Wells
Proc. SPIE 1362, Structure optimization of selectively doped heterojunctions: evidences for a magnetically induced Wigner solidification, 0000 (1 February 1991); doi: 10.1117/12.24506
Proc. SPIE 1362, Recent progress in device-oriented II-VI research at the University of Wuerzburg, 0000 (1 February 1991); doi: 10.1117/12.24507
Additonal Papers
Proc. SPIE 1362, Cold to hot electron transition devices, 0000 (1 February 1991); doi: 10.1117/12.48061
Optoelectronic Integrated Circuits
Proc. SPIE 1362, Optically coupled 3-D common memory with GaAs on Si structure, 0000 (1 February 1991); doi: 10.1117/12.24509
Proc. SPIE 1362, InGaAs/InP monolithic photoreceivers for 1.3-1.5 um optical fiber transmission, 0000 (1 February 1991); doi: 10.1117/12.24510
Proc. SPIE 1362, Optical fiber amplifiers, 0000 (1 February 1991); doi: 10.1117/12.24511
Physical Concepts and Characterization of Materials I
Proc. SPIE 1362, Semiconductor waveguides for optical switching, 0000 (1 February 1991); doi: 10.1117/12.24512
Optoelectronic Technologies for Microwave Applications
Proc. SPIE 1362, Invited paper: Millimeter-wave and optoelectronic applications of heterostructure integrated circuits, 0000 (1 February 1991); doi: 10.1117/12.24516
Proc. SPIE 1362, Current technologies for very high performance VLSI ICs, 0000 (1 February 1991); doi: 10.1117/12.24517
Proc. SPIE 1362, Lattice-mismatched elemental and compound semiconductor heterostructures for 2-D and 3-D applications, 0000 (1 February 1991); doi: 10.1117/12.24519
Quantum Devices
Proc. SPIE 1362, Magnetocapacitance and photoluminescence spectroscopy studies of charge storage, bistability, and energy relaxation effects in resonant tunneling devices, 0000 (1 February 1991); doi: 10.1117/12.24520
Proc. SPIE 1362, Regular doping structures: a Si-based, quantum-well infrared detector, 0000 (1 February 1991); doi: 10.1117/12.24521
Proc. SPIE 1362, Theory of optical-phonon interactions in a rectangular quantum wire, 0000 (1 February 1991); doi: 10.1117/12.24523
Nonlinear Optical Phenomena in Bulk and Multiple Quantum Wells
Proc. SPIE 1362, Nonlinear energy transfer between nanosecond pulses in iron-doped InP crystals, 0000 (1 February 1991); doi: 10.1117/12.24524
Optical Computing
Proc. SPIE 1362, Quantum-well excitonic devices for optical computing, 0000 (1 February 1991); doi: 10.1117/12.24525
Proc. SPIE 1362, III-V semiconductor integrated optoelectronics for optical computing, 0000 (1 February 1991); doi: 10.1117/12.24526
Si and Si-Ge Alloys
Proc. SPIE 1362, Wave-function engineering in Si-Ge microstructures: linear and nonlinear optical response, 0000 (1 February 1991); doi: 10.1117/12.24527
Visible, Infrared, and Far Infrared Sources
Proc. SPIE 1362, Indirect stimulated emission at room temperature in the visible range, 0000 (1 February 1991); doi: 10.1117/12.24530
Proc. SPIE 1362, Some characteristics of 3.2 um injection lasers based on InAsSb/InAsSbP system, 0000 (1 February 1991); doi: 10.1117/12.24531
Optoelectronic Quantum Devices
Proc. SPIE 1362, InGaAs/AlGaAs vertical optical modulators and sources on a transparent GaAs substrate, 0000 (1 February 1991); doi: 10.1117/12.24532
Proc. SPIE 1362, Generalization of Bragg reflector geometry: application to (Ga,Al)As - (Ca,Sr)F2 reflectors, 0000 (1 February 1991); doi: 10.1117/12.24533
Proc. SPIE 1362, Optoelectronic and optical bistabilities of photocurrent and photoluminescence at low-temperature avalanche breakdown in GaAs epitaxial films, 0000 (1 February 1991); doi: 10.1117/12.24534
Physics and Applications of Hight Tc Superconducting Materials
Proc. SPIE 1362, Metal-superconductor-insulator transitions in oxide materials, 0000 (1 February 1991); doi: 10.1117/12.24537
Photodectors and Modulators
Proc. SPIE 1362, Performances of gallium arsenide on silicon substrate photoconductive detectors, 0000 (1 February 1991); doi: 10.1117/12.24538
Proc. SPIE 1362, Characterization of picosecond GaAs metal-semiconductor-metal photodetectors, 0000 (1 February 1991); doi: 10.1117/12.24539
Poster Session
Proc. SPIE 1362, InGaAs/GaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 1.3 um grown by molecular beam epitaxy, 0000 (1 February 1991); doi: 10.1117/12.24540
Photodectors and Modulators
Proc. SPIE 1362, Band-structure dependence of impact ionization: bulk semiconductors, strained Ge/Si alloys, and multiple-quantum-well avalanche photodetectors, 0000 (1 February 1991); doi: 10.1117/12.24541
Electronic Properties of Heterostructures
Proc. SPIE 1362, Advanced InGaAs/InP p-type pseudomorphic MODFET, 0000 (1 February 1991); doi: 10.1117/12.24542
Proc. SPIE 1362, Use of admittance spectroscopy to probe the DX-centers in AlGaAs, 0000 (1 February 1991); doi: 10.1117/12.24543
Transport Phenomena in Hetrostructures and Quantum Wells
Proc. SPIE 1362, Hot carrier relaxation in bulk InGaAs and quantum-wells, 0000 (1 February 1991); doi: 10.1117/12.24545
Proc. SPIE 1362, Far-IR magneto-emission study of the quantum-hall state and breakdown of the quantum-hall effect, 0000 (1 February 1991); doi: 10.1117/12.24546
Proc. SPIE 1362, Bias dependence of the hole tunneling time in AlAs/GaAs resonant tunneling structures, 0000 (1 February 1991); doi: 10.1117/12.24547
Proc. SPIE 1362, Picosecond photocurrent measurements of negative differential velocity in GaAs/AlAs superlattices, 0000 (1 February 1991); doi: 10.1117/12.24548
Proc. SPIE 1362, Transport time and single-particle relaxation time in two-dimensional semiconductors, 0000 (1 February 1991); doi: 10.1117/12.24549
Optoelectronic Integrated Circuits
Proc. SPIE 1362, Buried-ridge-stripe lasers monolithically integrated with butt-coupled passive waveguides for OEIC, 0000 (1 February 1991); doi: 10.1117/12.24550
Proc. SPIE 1362, Integrated optical devices with silicon oxynitride prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si and GaAs substrates, 0000 (1 February 1991); doi: 10.1117/12.24551
Proc. SPIE 1362, Refractive index of multiple-quantum-well waveguides subject to impurity induced disordering using boron and fluorine, 0000 (1 February 1991); doi: 10.1117/12.24552
Proc. SPIE 1362, Ferroelectric microdomain reversal on Y-cut LiNbO3 surfaces, 0000 (1 February 1991); doi: 10.1117/12.24553
Proc. SPIE 1362, Absorption, fluorescence, and stimulated emission in Ti-diffused Er:LiNbO3 waveguides, 0000 (1 February 1991); doi: 10.1117/12.24554
Nonlinear Optical Phenomena in Bulk and Multiple Quantum Wells
Proc. SPIE 1362, Optical nonlinearities due to long-lived electron-hole plasmas, 0000 (1 February 1991); doi: 10.1117/12.24555
Proc. SPIE 1362, Semiconductor laser amplifiers as all-optical frequency converters, 0000 (1 February 1991); doi: 10.1117/12.24556
Proc. SPIE 1362, Resonant behavior of the temporal response of the photorefractive InP:Fe under dc fields, 0000 (1 February 1991); doi: 10.1117/12.24557
Proc. SPIE 1362, Optical nonlinearities in ZnSe multiple-quantum-wells, 0000 (1 February 1991); doi: 10.1117/12.24558
Optoelectronic Technologies for Microwave Applications
Proc. SPIE 1362, Asymmetric superlattices for microwave detection, 0000 (1 February 1991); doi: 10.1117/12.24559
Proc. SPIE 1362, Dynamic behavior of internal elements of high-frequency integrated circuits studied by time-resolved optical-beam-induced current (OBIC) method, 0000 (1 February 1991); doi: 10.1117/12.24560
Proc. SPIE 1362, III-V monolithic resonant photoreceiver on silicon substrate for long-wavelength operation, 0000 (1 February 1991); doi: 10.1117/12.24561
Proc. SPIE 1362, Picosecond optoelectronic semiconductor switching and its application, 0000 (1 February 1991); doi: 10.1117/12.24562