PROCEEDINGS VOLUME 1392
PROCESSING INTEGRATION | SEP 15 - OCT 8 1990
Advanced Techniques for Integrated Circuit Processing
PROCESSING INTEGRATION
Sep 15 - Oct 8 1990
Santa Clara, CA, United States
Diagnostics/Plasma Modeling
Proc. SPIE 1392, Evaluation of low-pressure silicon dry-etch processes with regard to low-substrate degradation, 0000 (1 March 1991); doi: 10.1117/12.48900
Proc. SPIE 1392, Characteristics of gate oxide surface material after exposure to magnetron-enhanced reactive ion etching plasma, 0000 (1 March 1991); doi: 10.1117/12.48901
Proc. SPIE 1392, Simulation of ion-enhanced dry-etch processes, 0000 (1 March 1991); doi: 10.1117/12.48902
Proc. SPIE 1392, Plasma modeling in microelectronic processing, 0000 (1 March 1991); doi: 10.1117/12.48903
Proc. SPIE 1392, Influence of sheath properties on the profile evolution in reactive ion etching processes, 0000 (1 March 1991); doi: 10.1117/12.48904
Proc. SPIE 1392, Oxygen reactive ion etching of polymers: profile evolution and process mechanisms, 0000 (1 March 1991); doi: 10.1117/12.48905
Proc. SPIE 1392, Progress of an advanced diffusion source plasma reactor, 0000 (1 March 1991); doi: 10.1117/12.48906
Proc. SPIE 1392, MTF of photolithographic hologram, 0000 (1 March 1991); doi: 10.1117/12.48907
Image Transfer Techniques
Proc. SPIE 1392, SPEEDIE: a profile simulator for etching and deposition, 0000 (1 March 1991); doi: 10.1117/12.48908
Proc. SPIE 1392, Dry etching of high-aspect ratio contact holes, 0000 (1 March 1991); doi: 10.1117/12.48909
Proc. SPIE 1392, Enhanced process control of submicron contact definition, 0000 (1 March 1991); doi: 10.1117/12.48910
Proc. SPIE 1392, Vertical oxide etching without inducing change in critical dimensions, 0000 (1 March 1991); doi: 10.1117/12.48911
Proc. SPIE 1392, High-resolution tri-level process by downstream-microwave rf-biased etching, 0000 (1 March 1991); doi: 10.1117/12.48912
Proc. SPIE 1392, Plasma diagnostics as inputs to the modeling of the oxygen reactive ion etching of multilevel resist structures, 0000 (1 March 1991); doi: 10.1117/12.48913
Proc. SPIE 1392, Dry etching for silylated resist development, 0000 (1 March 1991); doi: 10.1117/12.48914
Plasma Etch Applications
Proc. SPIE 1392, Single-crystal silicon trench etching for fabrication of highly integrated circuits, 0000 (1 March 1991); doi: 10.1117/12.48915
Proc. SPIE 1392, Polysilicon etching for nanometer-scale features, 0000 (1 March 1991); doi: 10.1117/12.48916
Proc. SPIE 1392, Honeywell's submicron polysilicon gate process, 0000 (1 March 1991); doi: 10.1117/12.48917
Proc. SPIE 1392, Chlorine or bromine chemistry in reactive ion etching Si-trench etching, 0000 (1 March 1991); doi: 10.1117/12.48918
Proc. SPIE 1392, LH electron cyclotron resonance plasma source, 0000 (1 March 1991); doi: 10.1117/12.48919
Proc. SPIE 1392, Magnetically enhanced reactive ion etching of submicron silicon trenches, 0000 (1 March 1991); doi: 10.1117/12.48920
Proc. SPIE 1392, Reactive ion etching of deep isolation trenches using sulfur hexafluoride, chlorine, helium, and oxygen, 0000 (1 March 1991); doi: 10.1117/12.48921
Proc. SPIE 1392, Improvement in dry etching of tungsten features, 0000 (1 March 1991); doi: 10.1117/12.48922
Proc. SPIE 1392, Spin-on-glass/phosphosilicate glass etchback planarization process for 1.0 um CMOS technology, 0000 (1 March 1991); doi: 10.1117/12.48923
Proc. SPIE 1392, Enhanced etching of InP by cycling with sputter etching and reactive ion etching, 0000 (1 March 1991); doi: 10.1117/12.48924
Real-Time Control Algorithms
Proc. SPIE 1392, Business, manufacturing, and system integration issues in cluster tool process control, 0000 (1 March 1991); doi: 10.1117/12.48925
Proc. SPIE 1392, Cluster tool software and hardware architecture, 0000 (1 March 1991); doi: 10.1117/12.48926
Proc. SPIE 1392, Real-time automation of a dry etching system, 0000 (1 March 1991); doi: 10.1117/12.48927
Proc. SPIE 1392, Microcomputer-based real-time monitoring and control of single-wafer processing, 0000 (1 March 1991); doi: 10.1117/12.48928
Proc. SPIE 1392, Application of adaptive network theory to dry-etch monitoring and control, 0000 (1 March 1991); doi: 10.1117/12.48929
Proc. SPIE 1392, Real-time monitoring and control of plasma etching, 0000 (1 March 1991); doi: 10.1117/12.48930
Proc. SPIE 1392, Expert system and process optimization techniques for real-time monitoring and control of plasma processes, 0000 (1 March 1991); doi: 10.1117/12.48931
Machine Parameter Analysis
Proc. SPIE 1392, Fluid-flow-rate metrology: laboratory uncertainties and traceabilities, 0000 (1 March 1991); doi: 10.1117/12.48932
Proc. SPIE 1392, Effects of environmental and installation-specific factors on process gas delivery via mass-flow controller with an emphasis on real-time behavior, 0000 (1 March 1991); doi: 10.1117/12.48933
Proc. SPIE 1392, Monitoring and control of rf electrical parameters near plasma loads, 0000 (1 March 1991); doi: 10.1117/12.48934
Proc. SPIE 1392, New apparatus and method for fluid composition monitoring and control, 0000 (1 March 1991); doi: 10.1117/12.48935
Proc. SPIE 1392, Measurements on the NIST GEC reference cell, 0000 (1 March 1991); doi: 10.1117/12.48936
Proc. SPIE 1392, Review of temperature measurements in the semiconductor industry, 0000 (1 March 1991); doi: 10.1117/12.48937
Plasma Parameter Analysis
Proc. SPIE 1392, Applications of optical emission spectroscopy in plasma manufacturing systems, 0000 (1 March 1991); doi: 10.1117/12.48938
Proc. SPIE 1392, Electrical probe diagnostics for processing discharges, 0000 (1 March 1991); doi: 10.1117/12.48939
Proc. SPIE 1392, In-situ measurements of radicals and particles in a selective silicon oxide etching plasma, 0000 (1 March 1991); doi: 10.1117/12.48940
Proc. SPIE 1392, Microwave interferometric measurements of process plasma density, 0000 (1 March 1991); doi: 10.1117/12.48941
Proc. SPIE 1392, Characterization of plasma processes with optical emission spectroscopy, 0000 (1 March 1991); doi: 10.1117/12.48942
Proc. SPIE 1392, Fast-injection Langmuir probe for process diagnostic and control, 0000 (1 March 1991); doi: 10.1117/12.48943
Etch Parameter Analysis
Proc. SPIE 1392, Radial ion energy measurements in an electron cyclotron resonance reactor, 0000 (1 March 1991); doi: 10.1117/12.48944
Proc. SPIE 1392, Process control sensor development for the automation of single-wafer processors, 0000 (1 March 1991); doi: 10.1117/12.48945
Proc. SPIE 1392, Theoretical and practical aspects of real-time Fourier imaging, 0000 (1 March 1991); doi: 10.1117/12.48946
Proc. SPIE 1392, Etch tailoring through flexible end-point detection, 0000 (1 March 1991); doi: 10.1117/12.48947
Proc. SPIE 1392, Real-time, in-situ measurement of film thickness and uniformity during plasma ashing of photoresist, 0000 (1 March 1991); doi: 10.1117/12.48948
Proc. SPIE 1392, In-situ film thickness measurements using acoustic techniques, 0000 (1 March 1991); doi: 10.1117/12.48949
Multichamber and In-Situ Processing of Electronic Materials
Proc. SPIE 1392, Formation of heterostructure devices in a multichamber processing environment with in-vacuo surface analysis diagnostics and in-situ process monitoring, 0000 (1 March 1991); doi: 10.1117/12.48950
Proc. SPIE 1392, Multichamber reactive ion etching processing for III-V optoelectronic devices, 0000 (1 March 1991); doi: 10.1117/12.48951
Proc. SPIE 1392, Focused ion-beam vacuum lithography of InP with an ultrathin native oxide resist, 0000 (1 March 1991); doi: 10.1117/12.48952
Proc. SPIE 1392, Self-aligned synthesis of titanium silicide by multipulse excimer laser irradiation, 0000 (1 March 1991); doi: 10.1117/12.48953
Proc. SPIE 1392, Laser processing of germanium, 0000 (1 March 1991); doi: 10.1117/12.48954
Proc. SPIE 1392, Research sputter cluster tool, 0000 (1 March 1991); doi: 10.1117/12.48955
Manufacturing Issues
Proc. SPIE 1392, Defect reduction strategies for submicron manufacturing: tools and methodologies, 0000 (1 March 1991); doi: 10.1117/12.48956
Proc. SPIE 1392, Fourier transform infrared spectrophotometry for thin film monitors: computer and equipment integration for enhanced capabilities, 0000 (1 March 1991); doi: 10.1117/12.48957
Proc. SPIE 1392, In-line supervisory control in a photolithographic workcell, 0000 (1 March 1991); doi: 10.1117/12.48958