PROCEEDINGS VOLUME 1393
PROCESSING INTEGRATION | 15 SEPTEMBER - 8 OCTOBER 1990
Rapid Thermal and Related Processing Techniques
PROCESSING INTEGRATION
15 September - 8 October 1990
Santa Clara, CA, United States
Multiprocessing
Proc. SPIE 1393, Economic impact of single-wafer multiprocessors, 0000 (1 April 1991); doi: 10.1117/12.25690
Proc. SPIE 1393, Multichamber rapid thermal processing, 0000 (1 April 1991); doi: 10.1117/12.25691
Proc. SPIE 1393, Rapid thermal processing in the manufacturing technology of contacts to InP-based photonic devices, 0000 (1 April 1991); doi: 10.1117/12.25692
Proc. SPIE 1393, Integrated rapid isothermal processing, 0000 (1 April 1991); doi: 10.1117/12.48968
Proc. SPIE 1393, Low-temperature in-situ dry cleaning process for epitaxial layer multiprocessing, 0000 (1 April 1991); doi: 10.1117/12.48969
Proc. SPIE 1393, Single-wafer integrated processing as a manufacturing tool using rapid thermal chemical vapor deposition technology, 0000 (1 April 1991); doi: 10.1117/12.25695
Dielectrics, Silicides, Doping, and Process-Induced Defects
Proc. SPIE 1393, Performance and reliability of ultrathin reoxidized nitrided oxides fabricated by rapid thermal processing, 0000 (1 April 1991); doi: 10.1117/12.25696
Proc. SPIE 1393, High-temperature degradation-free rapid thermal annealing of GaAs and InP, 0000 (1 April 1991); doi: 10.1117/12.25699
Proc. SPIE 1393, Rapid thermal annealing of the through-Ta5Si3 film implantation on GaAs, 0000 (1 April 1991); doi: 10.1117/12.25702
Proc. SPIE 1393, Anomalous diffusion phenomena in two-step rapid thermal diffusion of phosphorus, 0000 (1 April 1991); doi: 10.1117/12.25703
Proc. SPIE 1393, Investigation of rapid thermal process-induced defects in ion-implanted Czochralski silicon, 0000 (1 April 1991); doi: 10.1117/12.25704
Proc. SPIE 1393, Rapid thermal processing induced defects and gettering effects in silicon, 0000 (1 April 1991); doi: 10.1117/12.25705
Proc. SPIE 1393, RTP-induced defects in silicon studied by positron annihilation technique, 0000 (1 April 1991); doi: 10.1117/12.25706
Rapid Thermal Chemical Vapor Deposition
Proc. SPIE 1393, Multiple photo-assisted CVD of thin-film materials for III-V device technology, 0000 (1 April 1991); doi: 10.1117/12.25707
Proc. SPIE 1393, Low-resistivity contacts to silicon using selective RTCVD of germanium, 0000 (1 April 1991); doi: 10.1117/12.25708
Proc. SPIE 1393, Si-based epitaxial growth by rapid thermal processing chemical vapor deposition, 0000 (1 April 1991); doi: 10.1117/12.25709
Proc. SPIE 1393, Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition, 0000 (1 April 1991); doi: 10.1117/12.25710
Proc. SPIE 1393, Selective deposition of polycrystalline SixGe1-x by rapid thermal processing, 0000 (1 April 1991); doi: 10.1117/12.25711
Process Monitoring, Thermal Stress, Temperature Measurement, and other Equipment Issues
Proc. SPIE 1393, Noninvasive sensors for in-situ process monitoring and control in advanced microelectronics manufacturing, 0000 (1 April 1991); doi: 10.1117/12.25712
Proc. SPIE 1393, Systems-oriented survey of noncontact temperature measurement techniques for rapid thermal processing, 0000 (1 April 1991); doi: 10.1117/12.25713
Proc. SPIE 1393, Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission, 0000 (1 April 1991); doi: 10.1117/12.25714
Proc. SPIE 1393, Emissivity of silicon wafers during rapid thermal processing, 0000 (1 April 1991); doi: 10.1117/12.25715
Proc. SPIE 1393, Pyrometer modeling for rapid thermal processing, 0000 (1 April 1991); doi: 10.1117/12.25716
Proc. SPIE 1393, In-situ interferometric measurements in a rapid thermal processor, 0000 (1 April 1991); doi: 10.1117/12.25717
Proc. SPIE 1393, RTP temperature uniformity mapping, 0000 (1 April 1991); doi: 10.1117/12.25718
Proc. SPIE 1393, Noncontacting acoustics-based temperature measurement techniques in rapid thermal processing, 0000 (1 April 1991); doi: 10.1117/12.25719
Proc. SPIE 1393, Round-robin comparison of temperature nonuniformity during RTP due to patterned layers, 0000 (1 April 1991); doi: 10.1117/12.25721
Proc. SPIE 1393, Adaptive process control for a rapid thermal processor, 0000 (1 April 1991); doi: 10.1117/12.25722
Proc. SPIE 1393, Analysis of temperature distribution and slip in rapid thermal processing, 0000 (1 April 1991); doi: 10.1117/12.25723
Proc. SPIE 1393, Uniformity characterization of rapid thermal processor thin films, 0000 (1 April 1991); doi: 10.1117/12.25724
Dielectrics, Silicides, Doping, and Process-Induced Defects
Proc. SPIE 1393, High-dose boron implantation and RTP anneal of polysilicon films for shallow junction diffusion sources and interconnects, 0000 (1 April 1991); doi: 10.1117/12.25726
Rapid Thermal Chemical Vapor Deposition
Proc. SPIE 1393, Epitaxial regrowth of silicon on sapphire by rapid isothermal processing, 0000 (1 April 1991); doi: 10.1117/12.25727
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