PROCEEDINGS VOLUME 1418
OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCE AND ENGINEERING | 20-25 JANUARY 1991
Laser Diode Technology and Applications III
OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCE AND ENGINEERING
20-25 January 1991
Los Angeles, CA, United States
Surface-Emitting Lasers I
Proc. SPIE 1418, Vertical-cavity surface-emitting semiconductor lasers: present status and future prospects, 0000 (1 July 1991); doi: 10.1117/12.43790
Proc. SPIE 1418, Novel distributed feedback structure for surface-emitting semiconductor lasers, 0000 (1 July 1991); doi: 10.1117/12.43791
Proc. SPIE 1418, Monolithic two-dimensional surface-emitting laser diode arrays with 45 degree micromirrors, 0000 (1 July 1991); doi: 10.1117/12.43792
Proc. SPIE 1418, Vertical-cavity surface-emitters for optoelectronic integration, 0000 (1 July 1991); doi: 10.1117/12.43793
Proc. SPIE 1418, High-power coherent operation of 2-D monolithically integrated master-oscillator power amplifiers, 0000 (1 July 1991); doi: 10.1117/12.43794
Proc. SPIE 1418, Experimental verification of grating theory for surface-emitting structures, 0000 (1 July 1991); doi: 10.1117/12.43795
Quantum-Well Lasers
Proc. SPIE 1418, InGaAs/InP distributed feedback quantum-well lasers, 0000 (1 July 1991); doi: 10.1117/12.43796
Proc. SPIE 1418, Experimental determination of recombination mechanisms in strained and unstrained quantum-well lasers, 0000 (1 July 1991); doi: 10.1117/12.43797
Proc. SPIE 1418, Optimization of strained layer InGaAs/GaAs quantum-well lasers, 0000 (1 July 1991); doi: 10.1117/12.43798
Proc. SPIE 1418, Strained quantum-well leaky-mode diode laser arrays, 0000 (1 July 1991); doi: 10.1117/12.43799
Proc. SPIE 1418, Predicting diode laser performance, 0000 (1 July 1991); doi: 10.1117/12.43800
Aerospace Applications of Semiconductor Lasers
Proc. SPIE 1418, Fiber optics development at McDonnell Douglas, 0000 (1 July 1991); doi: 10.1117/12.43801
Proc. SPIE 1418, Photonics technology for aerospace applications, 0000 (1 July 1991); doi: 10.1117/12.43802
Proc. SPIE 1418, Optoelectronic devices for fiber-optic sensor interface systems, 0000 (1 July 1991); doi: 10.1117/12.43803
Processes and Materials for Semiconductor Lasers
Proc. SPIE 1418, Applications of dry etching to InP-based laser fabrication, 0000 (1 July 1991); doi: 10.1117/12.43804
Proc. SPIE 1418, Rapid isothermal process technology for optoelectronic applications, 0000 (1 July 1991); doi: 10.1117/12.43805
Proc. SPIE 1418, Long-wavelength lasers and detectors fabricated on InP/GaAs superheteroepitaxial wafer, 0000 (1 July 1991); doi: 10.1117/12.43806
Proc. SPIE 1418, New structure and method for fabricating InP/InGaAsP buried heterostructure semiconductor lasers, 0000 (1 July 1991); doi: 10.1117/12.43807
Proc. SPIE 1418, Mirror fabrication for full-wafer laser technology, 0000 (1 July 1991); doi: 10.1117/12.43808
Proc. SPIE 1418, Technique for measuring stress-induced birefringence, 0000 (1 July 1991); doi: 10.1117/12.43809
Semiconductor Laser Reliability
Proc. SPIE 1418, InGaAs-GaAs strained layer lasers: physics and reliability, 0000 (1 July 1991); doi: 10.1117/12.43810
Proc. SPIE 1418, Evaluation of diode laser failure mechanisms and factors influencing reliability, 0000 (1 July 1991); doi: 10.1117/12.43811
Devices for Optical Amplifiers
Proc. SPIE 1418, Advances in laser pump sources for erbium-doped fiber amplifiers, 0000 (1 July 1991); doi: 10.1117/12.43812
Proc. SPIE 1418, High-power single-element pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well lasers for pumping Er-doped fiber amplifiers, 0000 (1 July 1991); doi: 10.1117/12.43813
Proc. SPIE 1418, Characterization of GRIN-SCH-SQW amplifiers, 0000 (1 July 1991); doi: 10.1117/12.43814
Proc. SPIE 1418, Design optimization of a 10-amplifier coherent array, 0000 (1 July 1991); doi: 10.1117/12.43815
Spectral and Dynamic Properties of Semiconductor Lasers
Proc. SPIE 1418, Laser diodes with gain-coupled distributed optical feedback, 0000 (1 July 1991); doi: 10.1117/12.43816
Proc. SPIE 1418, Optimization of grating depth and layer thicknesses for DFB lasers, 0000 (1 July 1991); doi: 10.1117/12.43817
Proc. SPIE 1418, Temperature stability of Bragg grating resonant frequency, 0000 (1 July 1991); doi: 10.1117/12.43818
Proc. SPIE 1418, High-frequency 1.3 um InGaAsP semi-insulating buried crescent lasers for analog applications, 0000 (1 July 1991); doi: 10.1117/12.43819
High-Power Semiconductor Laser I
Proc. SPIE 1418, High-power visible semiconductor lasers, 0000 (1 July 1991); doi: 10.1117/12.43820
Proc. SPIE 1418, 0.36-W cw diffraction-limited-beam operation from phase-locked arrays of antiguides, 0000 (1 July 1991); doi: 10.1117/12.43821
Proc. SPIE 1418, 10-watt cw diode laser bar efficiently fiber-coupled to a 381 um diameter fiber-optic connector, 0000 (1 July 1991); doi: 10.1117/12.43822
Proc. SPIE 1418, 100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays, 0000 (1 July 1991); doi: 10.1117/12.43823
Proc. SPIE 1418, Fundamental array mode operation of semiconductor laser arrays using external spatial filtering, 0000 (1 July 1991); doi: 10.1117/12.43824
High-Power Semiconductor Lasers II
Proc. SPIE 1418, High-power diffraction-limited phase-locked GaAs/GaAlAs laser diode array, 0000 (1 July 1991); doi: 10.1117/12.43825
Surface-Emitting Lasers II
Proc. SPIE 1418, Progress of surface-emitting lasers in Japan, 0000 (1 July 1991); doi: 10.1117/12.43826
Proc. SPIE 1418, Low-threshold grating surface-emitting laser arrays, 0000 (1 July 1991); doi: 10.1117/12.43827
Proc. SPIE 1418, Lateral-mode discrimination in surface-emitting DBR lasers with cylindrical symmetry, 0000 (1 July 1991); doi: 10.1117/12.43828
Proc. SPIE 1418, Threshold current density of InGaAsP/InP surface-emitting laser diodes with hemispherical resonator, 0000 (1 July 1991); doi: 10.1117/12.43829
Applications of Semiconductor Lasers
Proc. SPIE 1418, Amplitude-modulated laser-driven fiber-optic RF interferometric strain sensor, 0000 (1 July 1991); doi: 10.1117/12.43830
Proc. SPIE 1418, Miniature laser Doppler anemometer for sensor concepts, 0000 (1 July 1991); doi: 10.1117/12.43831
Proc. SPIE 1418, GaAs/GaAlAs integrated optoelectronic transmitter for microwave applications, 0000 (1 July 1991); doi: 10.1117/12.43832
Proc. SPIE 1418, High-resolution spectral characterization of high-power laser diodes, 0000 (1 July 1991); doi: 10.1117/12.43833
Proc. SPIE 1418, Application of tunable diode lasers in control of high-pure-material technologies, 0000 (1 July 1991); doi: 10.1117/12.43834
Semiconductor Laser Reliability
Proc. SPIE 1418, Time development of AlGaAs single-quantum-well laser facet temperature on route to catastrophical breakdown, 0000 (1 July 1991); doi: 10.1117/12.43835
Surface-Emitting Lasers II
Proc. SPIE 1418, Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser, 0000 (1 July 1991); doi: 10.1117/12.43836
High-Power Semiconductor Laser I
Proc. SPIE 1418, 1-W cw separate confinement InGaAsP/InP (lamda = 1.3 um) laser diodes and their coupling with optical fibers, 0000 (1 July 1991); doi: 10.1117/12.43837
Surface-Emitting Lasers I
Proc. SPIE 1418, Fabrication of unstable resonator diode lasers, 0000 (1 July 1991); doi: 10.1117/12.43838
Proc. SPIE 1418, Modeling of coupled grating surface-emitting diodes, 0000 (1 July 1991); doi: 10.1117/12.43839
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