PROCEEDINGS VOLUME 1464
MICROLITHOGRAPHY | 1-31 MARCH 1991
Integrated Circuit Metrology, Inspection, and Process Control V
MICROLITHOGRAPHY
1-31 March 1991
San Jose, CA, United States
SEM Metrology I
Proc. SPIE 1464, Charging effects in low-voltage SEM metrology, 0000 (1 July 1991); doi: 10.1117/12.44419
Proc. SPIE 1464, Monte Carlo modeling of secondary electron signals from heterogeneous specimens with nonplanar surfaces, 0000 (1 July 1991); doi: 10.1117/12.44420
Proc. SPIE 1464, Figure of merit for calibration and comparison of linewidth measurement instruments, 0000 (1 July 1991); doi: 10.1117/12.44421
Proc. SPIE 1464, Application of transmission electron detection to x-ray mask calibrations and inspection, 0000 (1 July 1991); doi: 10.1117/12.44422
SEM Metrology II
Proc. SPIE 1464, Linewidth measurement comparison between a photometric optical microscope and a scanning electron microscope backed with Monte Carlo trajectory computations, 0000 (1 July 1991); doi: 10.1117/12.44423
Proc. SPIE 1464, High-speed stepper setup using a low-voltage SEM, 0000 (1 July 1991); doi: 10.1117/12.44424
Proc. SPIE 1464, Electron-beam metrology: the European initiative, 0000 (1 July 1991); doi: 10.1117/12.44425
Proc. SPIE 1464, Cross-sectional imaging in SEM: signal formation mechanism and CD measurements, 0000 (1 July 1991); doi: 10.1117/12.44426
Electrical Metrology
Proc. SPIE 1464, Extending electrical measurements to the 0.5 µm regime, 0000 (1 July 1991); doi: 10.1117/12.44427
Proc. SPIE 1464, 0.50 µm contact measurement and characterization, 0000 (1 July 1991); doi: 10.1117/12.44428
Proc. SPIE 1464, Half-micrometer linewidth metrology, 0000 (1 July 1991); doi: 10.1117/12.44429
Optical Metrology
Proc. SPIE 1464, Optical metrology for integrated circuit fabrication, 0000 (1 July 1991); doi: 10.1117/12.44430
Proc. SPIE 1464, Pattern recognition approach to trench bottom-width measurement, 0000 (1 July 1991); doi: 10.1117/12.44431
Proc. SPIE 1464, Linearity of coherence probe metrology: simulation and experiment, 0000 (1 July 1991); doi: 10.1117/12.44432
Proc. SPIE 1464, Understanding metrology of polysilicon gates through reflectance measurements and simulation, 0000 (1 July 1991); doi: 10.1117/12.44433
Proc. SPIE 1464, Numerical simulation of thick-linewidth measurements by reflected light, 0000 (1 July 1991); doi: 10.1117/12.44434
Resist Process Control
Proc. SPIE 1464, Resist tracking: a lithographic diagnostic tool, 0000 (1 July 1991); doi: 10.1117/12.44435
Proc. SPIE 1464, Critical dimension control using development end point detection for wafers with multilayer structures, 0000 (1 July 1991); doi: 10.1117/12.44436
Proc. SPIE 1464, Optimal control of positive optical photoresist development, 0000 (1 July 1991); doi: 10.1117/12.44437
Proc. SPIE 1464, Photoresist dissolution rates: a comparison of puddle, spray, and immersion processes, 0000 (1 July 1991); doi: 10.1117/12.44438
Proc. SPIE 1464, Use of diffracted light from latent images to improve lithography control, 0000 (1 July 1991); doi: 10.1117/12.44439
Stepper Metrology
Proc. SPIE 1464, "Golden standard" wafer design for optical stepper characterization, 0000 (1 July 1991); doi: 10.1117/12.44440
Proc. SPIE 1464, Characterization of automatic overlay measurement technique for sub-half-micron devices, 0000 (1 July 1991); doi: 10.1117/12.44441
Proc. SPIE 1464, Experimental assessment of 150-mm P/P+ epitaxial silicon wafer flatness for deep-submicron applications, 0000 (1 July 1991); doi: 10.1117/12.44442
Proc. SPIE 1464, Applications of latent image metrology in microlithography, 0000 (1 July 1991); doi: 10.1117/12.44443
Stepper Process Control
Proc. SPIE 1464, Phase-shift mask technology: requirements for e-beam mask lithography, 0000 (1 July 1991); doi: 10.1117/12.44444
Proc. SPIE 1464, New phase-shifting mask structure for positive resist process, 0000 (1 July 1991); doi: 10.1117/12.44445
Proc. SPIE 1464, Edge-profile, materials, and protective coating effects on image quality, 0000 (1 July 1991); doi: 10.1117/12.44446
Proc. SPIE 1464, Phase-shift mask pattern accuracy requirements and inspection technology, 0000 (1 July 1991); doi: 10.1117/12.44447
Special Topics
Proc. SPIE 1464, Using the Atomic Force Microscope to measure submicron dimensions of integrated circuit devices and processes, 0000 (1 July 1991); doi: 10.1117/12.44448
Proc. SPIE 1464, Applications of an automated particle detection and identification system in VLSI wafer processing, 0000 (1 July 1991); doi: 10.1117/12.44449
Proc. SPIE 1464, Techniques for characterization of silicon penetration during DUV surface imaging, 0000 (1 July 1991); doi: 10.1117/12.44450
Proc. SPIE 1464, Semiconductor thin-film optical constant determination and thin-film thickness measurement equipment correlation, 0000 (1 July 1991); doi: 10.1117/12.44451
Proc. SPIE 1464, Thickness measurement of combined a-Si and Ti films on c-Si using a monochromatic ellipsometer, 0000 (1 July 1991); doi: 10.1117/12.44452
Poster Session I: Special Topics in Metrology
Proc. SPIE 1464, Statistical approach to optimizing advanced low-voltage SEM operation, 0000 (1 July 1991); doi: 10.1117/12.44453
Proc. SPIE 1464, Charging phenomena in e-beam metrology, 0000 (1 July 1991); doi: 10.1117/12.44454
Proc. SPIE 1464, Metrology issues associated with submicron linewidths, 0000 (1 July 1991); doi: 10.1117/12.44455
Proc. SPIE 1464, Advanced confocal technique for submicron CD measurements, 0000 (1 July 1991); doi: 10.1117/12.44456
Proc. SPIE 1464, Effect of operating points in submicron CD measurements, 0000 (1 July 1991); doi: 10.1117/12.44457
Proc. SPIE 1464, Computational model of the imaging process in scanning-x microscopy, 0000 (1 July 1991); doi: 10.1117/12.44458
Proc. SPIE 1464, Submicron linewidth measurement using an interferometric optical profiler, 0000 (1 July 1991); doi: 10.1117/12.44459
Proc. SPIE 1464, X-ray laminography analysis of ultra-fine-pitch solder connections on ultrathin boards, 0000 (1 July 1991); doi: 10.1117/12.44460
Poster Session II: Special Topics in Process Control and Emerging Technologies
Proc. SPIE 1464, Using an expert system to interface mainframe computing resources with an interactive video system, 0000 (1 July 1991); doi: 10.1117/12.44461
Proc. SPIE 1464, Adaptive control of photolithography, 0000 (1 July 1991); doi: 10.1117/12.44462
Proc. SPIE 1464, Effects of wafer cooling characteristics after post-exposure bake on critical dimensions, 0000 (1 July 1991); doi: 10.1117/12.44463
Proc. SPIE 1464, Wafer alignment based on existing microstructures, 0000 (1 July 1991); doi: 10.1117/12.44464
Proc. SPIE 1464, Characterization of wavelength offset for optimization of deep-UV stepper performance, 0000 (1 July 1991); doi: 10.1117/12.44465
Proc. SPIE 1464, Optical polysilicon over oxide thickness measurement, 0000 (1 July 1991); doi: 10.1117/12.44466
Proc. SPIE 1464, Measuring films on and below polycrystalline silicon using reflectometry, 0000 (1 July 1991); doi: 10.1117/12.44467
Proc. SPIE 1464, Surface roughness effects on light scattered by submicron particles on surfaces, 0000 (1 July 1991); doi: 10.1117/12.44468
Proc. SPIE 1464, In-line wafer inspection using 100-megapixel-per-second digital image processing technology, 0000 (1 July 1991); doi: 10.1117/12.44469
Proc. SPIE 1464, Automated wafer inspection in the manufacturing line, 0000 (1 July 1991); doi: 10.1117/12.44470
Proc. SPIE 1464, Automated approach to the correlation of defect locations to electrical test results to determine yield reducing defects, 0000 (1 July 1991); doi: 10.1117/12.44471
Electrical Metrology
Proc. SPIE 1464, Semiwafer metrology project, 0000 (1 July 1991); doi: 10.1117/12.44472
Poster Session II: Special Topics in Process Control and Emerging Technologies
Proc. SPIE 1464, Sequential experimentation strategy and response surface methodologies for photoresist process optimization, 0000 (1 July 1991); doi: 10.1117/12.44473
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