PROCEEDINGS VOLUME 1465
MICROLITHOGRAPHY | 1-31 MARCH 1991
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
MICROLITHOGRAPHY
1-31 March 1991
San Jose, CA, United States
X-Ray Lithography-International Developments
Proc. SPIE 1465, X-ray lithography system development at IBM: overview and status, 0000 (1 August 1991); doi: 10.1117/12.47339
Proc. SPIE 1465, Design and fabrication of soft x-ray photolithography experimental beam line at Beijing National Synchrotron Radiation Laboratory, 0000 (1 August 1991); doi: 10.1117/12.28433
Proc. SPIE 1465, Recent developments of x-ray lithography in Canada, 0000 (1 August 1991); doi: 10.1117/12.47340
Ion Beams
Proc. SPIE 1465, Focused ion beam induced deposition: a review, 0000 (1 August 1991); doi: 10.1117/12.47341
Proc. SPIE 1465, Application and integration of a focused ion beam circuit repair system, 0000 (1 August 1991); doi: 10.1117/12.47342
Proc. SPIE 1465, Nanometer scale focused ion beam vacuum lithography using an ultrathin oxide resist, 0000 (1 August 1991); doi: 10.1117/12.47343
Proc. SPIE 1465, Defect repair for gold absorber/silicon membrane x-ray masks, 0000 (1 August 1991); doi: 10.1117/12.47344
X-Ray Lithography-Systems Considerations
Proc. SPIE 1465, Multilayer optics for soft x-ray projection lithography: problems and prospects, 0000 (1 August 1991); doi: 10.1117/12.47345
Proc. SPIE 1465, System design considerations for a production-grade, ESR-based x-ray lithography beamline, 0000 (1 August 1991); doi: 10.1117/12.47346
Proc. SPIE 1465, Video-based alignment system for x-ray lithography, 0000 (1 August 1991); doi: 10.1117/12.47347
Proc. SPIE 1465, Novel toroidal mirror enhances x-ray lithography beamline at the Center for X-ray Lithography, 0000 (1 August 1991); doi: 10.1117/12.47348
X-Ray Lithography Masks
Proc. SPIE 1465, Parametric studies and characterization measurements of x-ray lithography mask membranes, 0000 (1 August 1991); doi: 10.1117/12.47349
Proc. SPIE 1465, Simulation of low-energy x-ray lithography using a diamond membrane mask, 0000 (1 August 1991); doi: 10.1117/12.47350
Proc. SPIE 1465, Optimization of an x-ray mask design for use with horizontal and vertical kinematic mounts, 0000 (1 August 1991); doi: 10.1117/12.47351
E-Beam Lithography-E-Beam Tools
Proc. SPIE 1465, Investigation on the effect of electron-beam acceleration voltage and electron-beam sharpness on 0.2-um patterns, 0000 (1 August 1991); doi: 10.1117/12.47352
Proc. SPIE 1465, Mix-and-match lithography for half-micrometer technology, 0000 (1 August 1991); doi: 10.1117/12.47353
E-Beam Process Control
Proc. SPIE 1465, Hierarchical proximity effect correction for e-beam direct writing of 64-Mbit DRAM, 0000 (1 August 1991); doi: 10.1117/12.47354
Proc. SPIE 1465, Multiple scattered electron-beam effect in electron-beam lithography, 0000 (1 August 1991); doi: 10.1117/12.47355
Proc. SPIE 1465, Application of an electron-beam scattering parameter extraction method for proximity correction in direct-write electron-beam lithography, 0000 (1 August 1991); doi: 10.1117/12.47356
Proc. SPIE 1465, Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess, 0000 (1 August 1991); doi: 10.1117/12.47357
Advanced Resist Technology I
Proc. SPIE 1465, Chemically amplified resists for x-ray and e-beam lithography, 0000 (1 August 1991); doi: 10.1117/12.47358
Proc. SPIE 1465, Resist patterning for sub-quarter-micrometer device fabrications, 0000 (1 August 1991); doi: 10.1117/12.47359
Advanced Resist Technology II
Proc. SPIE 1465, Process latitudes in projection printing, 0000 (1 August 1991); doi: 10.1117/12.47360
Proc. SPIE 1465, Modeling of illumination effects on resist profiles in x-ray lithography, 0000 (1 August 1991); doi: 10.1117/12.47361
Proc. SPIE 1465, Advanced lithographic methods for contact patterning on severe topography, 0000 (1 August 1991); doi: 10.1117/12.47362
Poster Session
Proc. SPIE 1465, Wet-developed, high-aspect-ratio resist patterns by 20-keV e-beam lithography, 0000 (1 August 1991); doi: 10.1117/12.47363
Proc. SPIE 1465, High-sensitivity and high-dry-etching durability positive-type electron-beam resist, 0000 (1 August 1991); doi: 10.1117/12.47364
Proc. SPIE 1465, DESIRE technology with electron-beam resists: fundamentals, experiments, and simulation, 0000 (1 August 1991); doi: 10.1117/12.28466
Proc. SPIE 1465, Cost-effective x-ray lithography, 0000 (1 August 1991); doi: 10.1117/12.47365
Proc. SPIE 1465, Spherical pinch x-ray generator prototype for microlithography, 0000 (1 August 1991); doi: 10.1117/12.47366
Proc. SPIE 1465, EXCON: a graphics-based experiment-control manager, 0000 (1 August 1991); doi: 10.1117/12.47367
Proc. SPIE 1465, Fine undercut control in bilayer PMMA-P(MMA-MAA) resist system for e-beam lithography with submicrometer resolution, 0000 (1 August 1991); doi: 10.1117/12.47368
Proc. SPIE 1465, Comparison of plasma source with synchrotron source in the Center for X-ray Lithography, 0000 (1 August 1991); doi: 10.1117/12.47377
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