Chemical Amplification Resist Systems
Proc. SPIE 1466, Airborne chemical contamination of a chemically amplified resist, 0000 (1 June 1991); doi: 10.1117/12.46354
Proc. SPIE 1466, Preliminary lithographic characteristics of an all-organic chemically amplified resist formulation for single-layer deep-UV lithography, 0000 (1 June 1991); doi: 10.1117/12.46355
Proc. SPIE 1466, Onium salt structure/property relationships in poly(4-tert-butyloxycarbonyloxystyrene) deep-UV resists, 0000 (1 June 1991); doi: 10.1117/12.46356
Proc. SPIE 1466, Dissolution inhibition mechanism of ANR photoresists: crosslinking vs. -OH site consumption, 0000 (1 June 1991); doi: 10.1117/12.46357
Proc. SPIE 1466, Chemically amplified negative-tone photoresist for sub-half-micron device and mask fabrication, 0000 (1 June 1991); doi: 10.1117/12.46358
Proc. SPIE 1466, New aqueous base-developable negative-tone photoresist based on furans, 0000 (1 June 1991); doi: 10.1117/12.46359
Proc. SPIE 1466, Novel acid-hardening positive photoresist technology, 0000 (1 June 1991); doi: 10.1117/12.46360
Proc. SPIE 1466, Single-component chemically amplified resist materials for electron-beam and x-ray lithography, 0000 (1 June 1991); doi: 10.1117/12.46361
Diazonaphthoquinones and Phenolic Resins
Proc. SPIE 1466, Structural effects of DNQ-PAC backbone on resist lithographic properties, 0000 (1 June 1991); doi: 10.1117/12.46362
Proc. SPIE 1466, Exposure dose optimization for a positive resist containing polyfunctional photoactive compound, 0000 (1 June 1991); doi: 10.1117/12.46363
Proc. SPIE 1466, Novolak design for high-resolution positive photoresists (IV): tandem-type novolak resin for high-performance positive photoresists, 0000 (1 June 1991); doi: 10.1117/12.46364
Proc. SPIE 1466, Studies of dissolution inhibition mechanism of DNQ-novolak resist (II): effect of extended ortho-ortho bond in novolak, 0000 (1 June 1991); doi: 10.1117/12.46365
Proc. SPIE 1466, Novolak resin design concept for high-resolution positive resists, 0000 (1 June 1991); doi: 10.1117/12.46366
Proc. SPIE 1466, Novel novolak resins using substituted phenols for high-performance positive photoresist, 0000 (1 June 1991); doi: 10.1117/12.46367
Proc. SPIE 1466, Progress in DUV resins, 0000 (1 June 1991); doi: 10.1117/12.46368
Proc. SPIE 1466, Dissolution of poly(p-hydroxystyrene): molecular weight effects, 0000 (1 June 1991); doi: 10.1117/12.46369
Silicon-Containing Resists and Plasma/Dry Process
Proc. SPIE 1466, Evaluation of poly(p-trimethylsilylstyrene and p-pentamethyldisilylstyrene sulfone)s as high-resolution electron-beam resists, 0000 (1 June 1991); doi: 10.1117/12.46370
Proc. SPIE 1466, Bilayer resist system utilizing alkali-developable organosilicon positive photoresist, 0000 (1 June 1991); doi: 10.1117/12.46371
Proc. SPIE 1466, Polysilanes for microlithography, 0000 (1 June 1991); doi: 10.1117/12.46372
Proc. SPIE 1466, Polysilyne resists for 193 nm excimer laser lithography, 0000 (1 June 1991); doi: 10.1117/12.46373
Proc. SPIE 1466, Application aspects of the Si-CARL bilayer process, 0000 (1 June 1991); doi: 10.1117/12.46374
Proc. SPIE 1466, Evaluation of phenolic resists for 193 nm surface imaging, 0000 (1 June 1991); doi: 10.1117/12.46375
Proc. SPIE 1466, In-situ monitoring of silylation mechanisms by laser interferometry, 0000 (1 June 1991); doi: 10.1117/12.46376
Proc. SPIE 1466, Study of silylation mechanisms and kinetics through variations in silylating agent and resin, 0000 (1 June 1991); doi: 10.1117/12.46377
Resist Process, Characterization, and Modeling
Proc. SPIE 1466, Generalized characteristic model for lithography: application to negative chemically amplified resists, 0000 (1 June 1991); doi: 10.1117/12.46378
Proc. SPIE 1466, Reliability of contrast and dissolution-rate-derived parameters as predictors of photoresist performance, 0000 (1 June 1991); doi: 10.1117/12.46379
Proc. SPIE 1466, Effect of sensitizer spatial distribution on dissolution inhibition in novolak/diazonaphthoquinone resists, 0000 (1 June 1991); doi: 10.1117/12.46380
Proc. SPIE 1466, Some experimental techniques for characterizing photoresists, 0000 (1 June 1991); doi: 10.1117/12.46381
Proc. SPIE 1466, Physical aging of resists: the continual evolution of lithographic material, 0000 (1 June 1991); doi: 10.1117/12.46382
Poster Session I: Chemical Amplification Resist Systems
Proc. SPIE 1466, Study of the chemically amplifiable resist materials for electron-beam lithography, 0000 (1 June 1991); doi: 10.1117/12.46383
Proc. SPIE 1466, Novel base-generating photoinitiators for deep-UV lithography, 0000 (1 June 1991); doi: 10.1117/12.46384
Proc. SPIE 1466, Nonmetallic acid generators for i-line and g-line chemically amplified resists, 0000 (1 June 1991); doi: 10.1117/12.46385
Proc. SPIE 1466, Polyvinylphenols protected with tetrahydropyranyl group in chemical amplification positive deep-UV resist systems, 0000 (1 June 1991); doi: 10.1117/12.46386
Proc. SPIE 1466, Mechanistic studies on the poly(4-tert-butoxycarbonyloxystyrene)/triphenylsulfonium salt photoinitiation process, 0000 (1 June 1991); doi: 10.1117/12.46387
Proc. SPIE 1466, Process latitude for the chemical amplification resists AZ PF514 and AZ PN114, 0000 (1 June 1991); doi: 10.1117/12.46388
Proc. SPIE 1466, Negative chemical amplification resist systems based on polyhydroxystyrenes and N-substituted imides or aldehydes, 0000 (1 June 1991); doi: 10.1117/12.46389
Proc. SPIE 1466, Acid-catalyzed pinacol rearrangement: chemically amplified reverse polarity change, 0000 (1 June 1991); doi: 10.1117/12.46390
Proc. SPIE 1466, Negative resist systems using acid-catalyzed pinacol rearrangement reaction in a phenolic resin matrix, 0000 (1 June 1991); doi: 10.1117/12.46391
Poster Session II: Dissolution Inhibtion Resist Systems
Proc. SPIE 1466, Preparations and properties of novel positive photosensitive polyimides, 0000 (1 June 1991); doi: 10.1117/12.46392
Proc. SPIE 1466, Novel quinonediazide-sensitized photoresist system for i-line and deep-UV lithography, 0000 (1 June 1991); doi: 10.1117/12.46393
Proc. SPIE 1466, Structure of poly(p-hydroxystyrene) film, 0000 (1 June 1991); doi: 10.1117/12.46394
Proc. SPIE 1466, DQN photoresist with tetrahydroxydiphenylmethane as ballasting group in PAC, 0000 (1 June 1991); doi: 10.1117/12.46395
Proc. SPIE 1466, Mechanism of dissolution inhibition of novolak-diazoquinone resist, 0000 (1 June 1991); doi: 10.1117/12.46396
Proc. SPIE 1466, Dissolution kinetics of high-resolution novolac resists, 0000 (1 June 1991); doi: 10.1117/12.46397
Proc. SPIE 1466, Technology and chemistry of high-temperature positive resist, 0000 (1 June 1991); doi: 10.1117/12.46398
Poster Session III: Silicon-Containing Resists and Plasma/Dry Process
Proc. SPIE 1466, Surface imaging on the basis of phenolic resin: experiments and simulation, 0000 (1 June 1991); doi: 10.1117/12.46399
Proc. SPIE 1466, Synthesis and lithographic evaluation of alternating copolymers of linear and cyclic alkenyl(di)silanes with sulfur dioxide, 0000 (1 June 1991); doi: 10.1117/12.46400
Proc. SPIE 1466, Novel surface imaging masking technique for high-aspect-ratio dry etching applications, 0000 (1 June 1991); doi: 10.1117/12.46401
Proc. SPIE 1466, Highly sensitive microresinoid siloxane resist for EB and deep-UV lithography, 0000 (1 June 1991); doi: 10.1117/12.46402
Proc. SPIE 1466, Progress in the study of development-free vapor photolithography, 0000 (1 June 1991); doi: 10.1117/12.46403
Proc. SPIE 1466, Resist design for dry-developed positive working systems in deep-UV and e-beam lithography, 0000 (1 June 1991); doi: 10.1117/12.46404
Proc. SPIE 1466, Effect of silylation condition on the silylated image in the DESIRE process, 0000 (1 June 1991); doi: 10.1117/12.46405
Proc. SPIE 1466, Dry development and plasma durability of resists: melt viscosity and self-diffusion effects, 0000 (1 June 1991); doi: 10.1117/12.46406
Proc. SPIE 1466, Oxygen plasma etching of silylated resist in top-imaging lithographic process, 0000 (1 June 1991); doi: 10.1117/12.46407
Proc. SPIE 1466, Applicability of dry developable deep-UV lithography to sub-0.5 um processing, 0000 (1 June 1991); doi: 10.1117/12.46408
Proc. SPIE 1466, Characterizing a surface imaging process in a high-volume DRAM manufacturing production line, 0000 (1 June 1991); doi: 10.1117/12.46409
Resist Process, Characterization, and Modeling
Proc. SPIE 1466, Optimization of optical properties of resist processes, 0000 (1 June 1991); doi: 10.1117/12.46410