PROCEEDINGS VOLUME 1523
CONFERENCE ON PHYSICS AND TECHNOLOGY OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS | 1-28 FEBRUARY 1992
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
CONFERENCE ON PHYSICS AND TECHNOLOGY OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS
1-28 February 1992
Madras, India
Semiconductor Device Performance-Related Effects
II-V, II-VI Compounds I
Proc. SPIE 1523, Fundamental optical properties of Zn3P2, 0000 (1 February 1992); doi: 10.1117/12.56959
II-V, II-VI Compounds II
Proc. SPIE 1523, Preparation and characterization of pulse-plated CdSe films, 0000 (1 February 1992); doi: 10.1117/12.56960
Solar Cells
Proc. SPIE 1523, Thin film photoelectrodes of ternary chalcogenide CdSe1-xTex for photoelectrochemical solar cells applications, 0000 (1 February 1992); doi: 10.1117/12.56961
Surfaces, Interfaces, and Related Devices
Photovoltaic Effects
Proc. SPIE 1523, Influence of dopants on the electrical transport properties of Pbo.8Sno2Te thin films, 0000 (1 February 1992); doi: 10.1117/12.56963
Solar Cells
Proc. SPIE 1523, Studies on ITO/Si junctions prepared by spray pyrolysis technique, 0000 (1 February 1992); doi: 10.1117/12.56964
Photovoltaic Effects
Proc. SPIE 1523, Investigations on surface passivated CdS and Cds:As-based photoelectrochemical cells, 0000 (1 February 1992); doi: 10.1117/12.56965
New Materials and Characterization
Proc. SPIE 1523, Electrical, magnetic, and thermal properties of ternary A2B2O7 pyrochlores: a family of magnetic semiconductors, 0000 (1 February 1992); doi: 10.1117/12.56966
Semiconductor Device Performance-Related Effects
New Materials and Characterization
Proc. SPIE 1523, Organometallic molecular precursors for low-temperature MOCVD of III-V semiconductors, 0000 (1 February 1992); doi: 10.1117/12.56987
II-V, II-VI Compounds I
Proc. SPIE 1523, Characterization of SnSe films for device applications, 0000 (1 February 1992); doi: 10.1117/12.56997
Late Submissions II
Proc. SPIE 1523, Some aspects of CdTe, 0000 (1 February 1992); doi: 10.1117/12.56999
II-V, II-VI Compounds I
Proc. SPIE 1523, Vapour phase growth and characterization of II-VI mixed crystals, 0000 (1 February 1992); doi: 10.1117/12.57000
III-V Compounds and Quantum-Well Structures I
Proc. SPIE 1523, Quantum-well injection transit time device, 0000 (1 February 1992); doi: 10.1117/12.57001
Semiconductor Device Performance-Related Effects
II-V, II-VI Compounds II
Proc. SPIE 1523, Window coating prospects of Cu2Se thin films, 0000 (1 February 1992); doi: 10.1117/12.57003
Proc. SPIE 1523, Aging characteristics of CdSe thin films at low temperatures, 0000 (1 February 1992); doi: 10.1117/12.57004
III-V Compounds and Quantum-Well Structures II
Proc. SPIE 1523, Electrical properties of indium antimony films, 0000 (1 February 1992); doi: 10.1117/12.57006
II-V, II-VI Compounds II
Proc. SPIE 1523, Study on flash-evaporated tin selenide films, 0000 (1 February 1992); doi: 10.1117/12.57007
New Materials and Characterization
Proc. SPIE 1523, Electrical resistance variation in Se(10)Sb(10)Te(80) ternary semiconductor thin films, 0000 (1 February 1992); doi: 10.1117/12.57008
Amorphous and Polycrystalline Semiconductors
Proc. SPIE 1523, Electrical transport in some polymetallo phthalocyanines, 0000 (1 February 1992); doi: 10.1117/12.57009
Surfaces, Interfaces, and Related Devices
Amorphous and Polycrystalline Semiconductors
Proc. SPIE 1523, Dc and ac conductivity of amorphous CuInTe2 thin films, 0000 (1 February 1992); doi: 10.1117/12.57011
Proc. SPIE 1523, Amorphous CuInTe2 thin films, 0000 (1 February 1992); doi: 10.1117/12.57012
Late Submissions II
Proc. SPIE 1523, Growth of silicon nitride by PECVD, 0000 (1 February 1992); doi: 10.1117/12.57013
Proc. SPIE 1523, Kinetics of thermal donors and new oxygen donors in silicon, 0000 (1 February 1992); doi: 10.1117/12.57014
II-V, II-VI Compounds II
Proc. SPIE 1523, Zn3P2 as a material for optoelectronics devices, 0000 (1 February 1992); doi: 10.1117/12.57015
Late Submissions I
Proc. SPIE 1523, Postbreakdown behaviour of metal-oxide-semiconductor diodes, 0000 (1 February 1992); doi: 10.1117/12.57016
II-V, II-VI Compounds II
Proc. SPIE 1523, Electrical and optical properties of CuGa0.5In0.5Se2 thin films, 0000 (1 February 1992); doi: 10.1117/12.57017
Amorphous and Polycrystalline Semiconductors
Proc. SPIE 1523, Characterization of hydrogenated amorphous silicon carbide films, 0000 (1 February 1992); doi: 10.1117/12.57018
Photovoltaic Effects
Proc. SPIE 1523, Photovoltaic properties of ZnxCd1-xS/CuGaSe2 thin film solar cells, 0000 (1 February 1992); doi: 10.1117/12.57019
Proc. SPIE 1523, Tools for defect characterization in semiconductor devices: EBIC and voltage contrast, 0000 (1 February 1992); doi: 10.1117/12.57020
Amorphous and Polycrystalline Semiconductors
Proc. SPIE 1523, Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon, 0000 (1 February 1992); doi: 10.1117/12.57021
New Materials and Characterization
Proc. SPIE 1523, Hydrogenation effects on Ni/n-Si(111) Schottky diode characteristics, 0000 (1 February 1992); doi: 10.1117/12.57022
III-V Compounds and Quantum-Well Structures II
Proc. SPIE 1523, Transport properties of semiconducting GaxIn1-xSb solid solutions, 0000 (1 February 1992); doi: 10.1117/12.57023
Amorphous and Polycrystalline Semiconductors
Proc. SPIE 1523, Electronic conduction and density of states in Pb-modified amorphous germanium sulfide semiconductors, 0000 (1 February 1992); doi: 10.1117/12.57024
Surfaces, Interfaces, and Related Devices
Solar Cells
Proc. SPIE 1523, Studies on semiconducting samarium-sulphide electrolyte junction cells, 0000 (1 February 1992); doi: 10.1117/12.57027
Amorphous and Polycrystalline Semiconductors
Proc. SPIE 1523, Concentration dependence of diffusivity in polysilicon, 0000 (1 February 1992); doi: 10.1117/12.57028
Photovoltaic Effects
Proc. SPIE 1523, Chemical deposition of large-area silver sulphide films, 0000 (1 February 1992); doi: 10.1117/12.57029
Solar Cells
Proc. SPIE 1523, Microprocessor-based PID controller for low-temperature studies, 0000 (1 February 1992); doi: 10.1117/12.145060
Photovoltaic Effects
Proc. SPIE 1523, Development of a process simulator for optical waveguide fabrication by ion exchange in glass, 0000 (1 February 1992); doi: 10.1117/12.57031
New Materials and Characterization
Proc. SPIE 1523, Positron lifetime studies of Al-Si Ohmic contact formed by rapid thermal processing, 0000 (1 February 1992); doi: 10.1117/12.57032
II-V, II-VI Compounds I
Proc. SPIE 1523, Electrical and optical properties of pure and silver-doped zinc telluride films, 0000 (1 February 1992); doi: 10.1117/12.57033
Amorphous and Polycrystalline Semiconductors
Proc. SPIE 1523, Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films, 0000 (1 February 1992); doi: 10.1117/12.57034
Late Submissions II
Proc. SPIE 1523, Polarizabilities in the study of optical properties of semiconductors, 0000 (1 February 1992); doi: 10.1117/12.57035
Proc. SPIE 1523, Properties of spray pyrolysed SnO2:Sb films, 0000 (1 February 1992); doi: 10.1117/12.57036
Proc. SPIE 1523, Chemical spray deposition of CuGaS2 thin films, 0000 (1 February 1992); doi: 10.1117/12.57037
III-V Compounds and Quantum-Well Structures II
Proc. SPIE 1523, Properties of 35-GHz InP DDR, 0000 (1 February 1992); doi: 10.1117/12.57038
Proc. SPIE 1523, Exciton mobility in a GaAs/AlGaAs quantum well, 0000 (1 February 1992); doi: 10.1117/12.57039
Late Submissions I
Proc. SPIE 1523, Electrical properties of Cd0.3Ni0.7+xMnxFe2O4 ferrites, 0000 (1 February 1992); doi: 10.1117/12.57040
Proc. SPIE 1523, Tetravalent titanium addition to copper ferrite electrical properties, 0000 (1 February 1992); doi: 10.1117/12.57041
III-V Compounds and Quantum-Well Structures I
Proc. SPIE 1523, Photonic device applications of quantum-well structures: role of particle scattering on device performance, 0000 (1 February 1992); doi: 10.1117/12.56967
II-V, II-VI Compounds II
Proc. SPIE 1523, Thermal analysis of (ZnTe)x(CdSe)1-x crystals, 0000 (1 February 1992); doi: 10.1117/12.56968
Proc. SPIE 1523, Dielectric behaviour of (ZnTe)x(CdSe)1-x single crystals, 0000 (1 February 1992); doi: 10.1117/12.56969
Proc. SPIE 1523, Variation of bandgap with composition in (ZnTe)x(CdSe)1-x single crystals, 0000 (1 February 1992); doi: 10.1117/12.56970