PROCEEDINGS VOLUME 1593
MICROELECTRONIC PROCESSING INTEGRATION | 1-30 SEPTEMBER 1991
Dry Etch Technology
MICROELECTRONIC PROCESSING INTEGRATION
1-30 September 1991
San Jose, CA, United States
Damage and Contamination in Dry Etch
Proc. SPIE 1593, Evaluation of silicon surface damage induced by plasma radiation, 0000 (1 February 1992); doi: 10.1117/12.56910
Proc. SPIE 1593, Wafer charging in different types of plasma etchers, 0000 (1 February 1992); doi: 10.1117/12.56911
Proc. SPIE 1593, In-situ auto ash: a key to reducing process-generated particles, 0000 (1 February 1992); doi: 10.1117/12.56912
Proc. SPIE 1593, Characterization of silicon damage during LDD oxide spacer etch with the use of thermal-wave-modulated reflectance, 0000 (1 February 1992); doi: 10.1117/12.56913
Proc. SPIE 1593, Surface contamination control during plasma etching, 0000 (1 February 1992); doi: 10.1117/12.56914
Dry Etch Requirements for Advanced Photoresist
Proc. SPIE 1593, Consideration on the resolution limit of the resist silylated process, 0000 (1 February 1992); doi: 10.1117/12.56915
Proc. SPIE 1593, Mathematical model of the plasma etching of resists containing silicon, 0000 (1 February 1992); doi: 10.1117/12.56916
Proc. SPIE 1593, Interferometric monitoring and control of silicon incorporation in the diffusion-enhanced silylated resist process, 0000 (1 February 1992); doi: 10.1117/12.56917
Proc. SPIE 1593, ECR plasma and etch characterization of photoresist dry etch processes, 0000 (1 February 1992); doi: 10.1117/12.56918
Proc. SPIE 1593, Study of relationship between silylated profile and resist profile through variation in the process condition and resist materials in the DESIRE process, 0000 (1 February 1992); doi: 10.1117/12.56919
Advanced Dry Etch Technology
Proc. SPIE 1593, Application-specific integrated processing for ULSI, 0000 (1 February 1992); doi: 10.1117/12.56920
Proc. SPIE 1593, Correlation of real-time-monitored process module parameters and wafer results, 0000 (1 February 1992); doi: 10.1117/12.56921
Proc. SPIE 1593, Etching of copper at high rates via generation of volatile copper species, 0000 (1 February 1992); doi: 10.1117/12.56922
Proc. SPIE 1593, Mechanisms of silicon oxide etching in a highly polymerized fluorocarbon plasma, 0000 (1 February 1992); doi: 10.1117/12.56923
Proc. SPIE 1593, Chemically assisted ion beam etching of GaAs and GaSb using reactive flux of iodine and Ar+ beam, 0000 (1 February 1992); doi: 10.1117/12.56924
In-Situ and Multichamber Manufacturing Techniques for Compound Semiconductor Devices
Proc. SPIE 1593, Reactive sputtering of Si/SiNx quarter-wave dielectric mirrors using in-situ laser reflectometry, 0000 (1 February 1992); doi: 10.1117/12.56925
Proc. SPIE 1593, Photochemical etching and oxidation of GaSb stimulated by pulsed UV laser irradiations, 0000 (1 February 1992); doi: 10.1117/12.56926
Proc. SPIE 1593, In-situ monitoring of GaAs MBE by low-energy ion scattering, 0000 (1 February 1992); doi: 10.1117/12.56927
Dry Etch Requirements for Advanced Photoresist
Proc. SPIE 1593, Relationship between DUV lithography and etch for pattern transfer, 0000 (1 February 1992); doi: 10.1117/12.56928
Advanced Dry Etch Technology
Proc. SPIE 1593, Studies of low-pressure helical resonator discharges for advanced etching, 0000 (1 February 1992); doi: 10.1117/12.56929
Proc. SPIE 1593, Protection of aluminum alloy films from after corrosion using H2O down stream ashing, 0000 (1 February 1992); doi: 10.1117/12.56930
Proc. SPIE 1593, How to etch the optimal silicon trench: profile development and process discussion, 0000 (1 February 1992); doi: 10.1117/12.56931
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