PROCEEDINGS VOLUME 1594
MICROELECTRONIC PROCESSING INTEGRATION | 1-30 SEPTEMBER 1991
Process Module Metrology, Control and Clustering
MICROELECTRONIC PROCESSING INTEGRATION
1-30 September 1991
San Jose, CA, United States
Cluster Tool and Intergrated Semiconductor Devices
Proc. SPIE 1594, Learning opportunities through the use of cluster tools, 0000 (1 January 1992); doi: 10.1117/12.56617
Proc. SPIE 1594, Equipment improvement methodology, 0000 (1 January 1992); doi: 10.1117/12.56618
Proc. SPIE 1594, Integrated deposition of TiN barrier layers in cluster tools, 0000 (1 January 1992); doi: 10.1117/12.56619
Proc. SPIE 1594, Cluster tool technology, 0000 (1 January 1992); doi: 10.1117/12.56620
Proc. SPIE 1594, Open architecture cluster tool: communication and user interface integration, 0000 (1 January 1992); doi: 10.1117/12.56621
Proc. SPIE 1594, Single-wafer high-pressure oxidation, 0000 (1 January 1992); doi: 10.1117/12.56622
Proc. SPIE 1594, Benefits of cluster tool architecture for implementation of evolutionary equipment improvements and applications, 0000 (1 January 1992); doi: 10.1117/12.56623
Proc. SPIE 1594, Dynamic design processing of integrated circuits for an "on target" end product, 0000 (1 January 1992); doi: 10.1117/12.56624
Proc. SPIE 1594, Moss-Burstein shift in infrared materials under different physical conditions, 0000 (1 January 1992); doi: 10.1117/12.56625
Proc. SPIE 1594, Photoemission from periodic structure of graded superlattices under magnetic field, 0000 (1 January 1992); doi: 10.1117/12.56626
Poster Session
Proc. SPIE 1594, VLSI process expert diagnostic system, 0000 (1 January 1992); doi: 10.1117/12.56627
Proc. SPIE 1594, In-situ monitoring of DC saddle-field plasma-assisted deposition of amorphous silicon and silicon nitride, 0000 (1 January 1992); doi: 10.1117/12.56628
Proc. SPIE 1594, In-situ film thickness measurements for real-time monitoring and control of advanced photoresist track coating systems, 0000 (1 January 1992); doi: 10.1117/12.56629
Process Module Sensors
Proc. SPIE 1594, Mass spectrometric and optical emission diagnostics for rf plasma reactors, 0000 (1 January 1992); doi: 10.1117/12.56630
Proc. SPIE 1594, Electrical characterization of rf plasmas, 0000 (1 January 1992); doi: 10.1117/12.56631
Proc. SPIE 1594, Application of chemometrics to optical emission spectroscopy for plasma monitoring, 0000 (1 January 1992); doi: 10.1117/12.56632
Proc. SPIE 1594, Application of thermal imaging methodology for plasma etching diagnosis, 0000 (1 January 1992); doi: 10.1117/12.56633
Proc. SPIE 1594, In-situ diagnostics, monitoring, and metrology, 0000 (1 January 1992); doi: 10.1117/12.56634
Proc. SPIE 1594, In-process thin film thickness measurement and control, 0000 (1 January 1992); doi: 10.1117/12.56635
Process Module Control Schemes
Proc. SPIE 1594, Categories of process variables: robustness optimization, uniformity tuning, and mean adjustment, 0000 (1 January 1992); doi: 10.1117/12.56636
Proc. SPIE 1594, Etch process characterization using neural network methodology: a case study, 0000 (1 January 1992); doi: 10.1117/12.56637
Proc. SPIE 1594, Open-loop predictive control of plasma etching of tungsten using an in-situ film thickness sensor, 0000 (1 January 1992); doi: 10.1117/12.56638
Proc. SPIE 1594, On-line process-model-based control of a plasma etcher, 0000 (1 January 1992); doi: 10.1117/12.56639
Proc. SPIE 1594, Application of artificial neural networks to real-time control of plasma processes, 0000 (1 January 1992); doi: 10.1117/12.56640
Proc. SPIE 1594, Application of adaptive equipment models to a photolithographic process, 0000 (1 January 1992); doi: 10.1117/12.56641
Proc. SPIE 1594, Adaptive photolithography control using development time manipulation, 0000 (1 January 1992); doi: 10.1117/12.56642
Optical Diagnostics of Surfaces and Thin Films
Proc. SPIE 1594, Raman scattering as an in-situ optical diagnostic, 0000 (1 January 1992); doi: 10.1117/12.56643
Proc. SPIE 1594, Light scattering methods for semiconductor process monitoring and control, 0000 (1 January 1992); doi: 10.1117/12.56644
Proc. SPIE 1594, Effects of feature edges on thickness readings of thin oxides, 0000 (1 January 1992); doi: 10.1117/12.56645
Proc. SPIE 1594, Novel microspot dielectric film thickness measurement system, 0000 (1 January 1992); doi: 10.1117/12.56646
Proc. SPIE 1594, Time-resolved study of excimer laser ablation of thin organic films from a metal surface, 0000 (1 January 1992); doi: 10.1117/12.56647
Proc. SPIE 1594, High-resolution surface plasmon measurements: a sensitive probe for thickness and structural information of ultrathin films, 0000 (1 January 1992); doi: 10.1117/12.56648
Gas-Phase Optical Diagnostics During Thin Film Processing
Proc. SPIE 1594, Infrared diagnostics for semiconductor process monitoring, 0000 (1 January 1992); doi: 10.1117/12.56649
Proc. SPIE 1594, Ion velocity distributions in electron cyclotron resonance plasmas, 0000 (1 January 1992); doi: 10.1117/12.56650
Proc. SPIE 1594, Particle spatial distributions in low-pressure discharges, 0000 (1 January 1992); doi: 10.1117/12.56651
Proc. SPIE 1594, Application of optical emission diagnostics and control related to semiconductor processing, 0000 (1 January 1992); doi: 10.1117/12.56652
Proc. SPIE 1594, Optical emission spectroscopy as a process monitor for triod ion plating with TiN, 0000 (1 January 1992); doi: 10.1117/12.56653
Proc. SPIE 1594, Optical characterization of thin film laser deposition processes, 0000 (1 January 1992); doi: 10.1117/12.56654
Proc. SPIE 1594, Infrared diode laser and laser-induced fluorescence diagnostics of an electron cyclotron resonance plasma etching tool, 0000 (1 January 1992); doi: 10.1117/12.56655
Poster Session
Proc. SPIE 1594, Tessellated probe as an aid to process development, 0000 (1 January 1992); doi: 10.1117/12.56656
Proc. SPIE 1594, In-situ monitoring of semiconductor wafer temperature using infrared interferometry, 0000 (1 January 1992); doi: 10.1117/12.56657
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