PROCEEDINGS VOLUME 1595
MICROELECTRONIC PROCESSING INTEGRATION | 1-30 SEPTEMBER 1991
Rapid Thermal and Integrated Processing
MICROELECTRONIC PROCESSING INTEGRATION
1-30 September 1991
San Jose, CA, United States
Equipment Design, Process Control, and Temperature Measurement
Proc. SPIE 1595, Modeling and control of rapid thermal processing, 0000 (1 February 1992); doi: 10.1117/12.56658
Proc. SPIE 1595, Review of rapid thermal processing: system design and applications, 0000 (1 February 1992); doi: 10.1117/12.56659
Proc. SPIE 1595, Influence of pyrometer signal absorption due to process gas on temperature control in rapid thermal processing, 0000 (1 February 1992); doi: 10.1117/12.56660
Proc. SPIE 1595, Application of modern quality improvement techniques to rapid thermal processing, 0000 (1 February 1992); doi: 10.1117/12.56661
Proc. SPIE 1595, Wafer emissivity correction using dual-color pyrometry, 0000 (1 February 1992); doi: 10.1117/12.56662
Proc. SPIE 1595, Improved wafer temperature measurements, 0000 (1 February 1992); doi: 10.1117/12.56663
Proc. SPIE 1595, Applications of surface charge analyzer for use in process control and in-line characterization of reoxidized nitrided oxide (ONO) films, 0000 (1 February 1992); doi: 10.1117/12.56664
Proc. SPIE 1595, Uniformity characterization of rapid thermal processor thin films, 0000 (1 February 1992); doi: 10.1117/12.56665
Chemical Vapor Deposition
Proc. SPIE 1595, Epitaxial growth and processing of Si1-xGex/Si for heterojunction bipolar transistors using rapid thermal techniques, 0000 (1 February 1992); doi: 10.1117/12.56666
Proc. SPIE 1595, Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition, 0000 (1 February 1992); doi: 10.1117/12.56667
Proc. SPIE 1595, Control of polysilicon emitter interface using RTCVD, 0000 (1 February 1992); doi: 10.1117/12.56668
Ion Implantation
Proc. SPIE 1595, Rapid thermal annealing of ion-implanted InP, InGaAs, and InSb, 0000 (1 February 1992); doi: 10.1117/12.56669
Proc. SPIE 1595, Damage and RTA kinetics in Ar+ and Si+ ion-implanted CZ silicon characterized by thermal wave modulated optical reflectance, 0000 (1 February 1992); doi: 10.1117/12.56670
Process Integration and Novel Applications
Proc. SPIE 1595, RTP for advanced CMOS process integration, 0000 (1 February 1992); doi: 10.1117/12.56671
Proc. SPIE 1595, Oxidation of hydrogen silsesquioxane, (HSiO3/2)n, by rapid thermal processing, 0000 (1 February 1992); doi: 10.1117/12.56672
Dielectrics
Proc. SPIE 1595, In-situ characterization of SiO2 deposition and growth for gate-oxides, 0000 (1 February 1992); doi: 10.1117/12.56673
Proc. SPIE 1595, Chemically modified ultrathin oxides fabricated by rapid thermal processing, 0000 (1 February 1992); doi: 10.1117/12.56674
Proc. SPIE 1595, Development and characterization of an ultrathin rapid thermal silicon nitride for IC sensor applications, 0000 (1 February 1992); doi: 10.1117/12.56675
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