PROCEEDINGS VOLUME 1596
MICROELECTRONIC PROCESSING INTEGRATION | 1-30 SEPTEMBER 1991
Metallization: Performance and Reliability Issues for VLSI and ULSI
IN THIS VOLUME

0 Sessions, 14 Papers, 0 Presentations
MICROELECTRONIC PROCESSING INTEGRATION
1-30 September 1991
San Jose, CA, United States
Processing Issues
Proc. SPIE 1596, Some fundamental issues on metallization in VLSI, 0000 (1 December 1991); doi: 10.1117/12.51006
Proc. SPIE 1596, Unframed via interconnection of nonplanar device structures, 0000 (1 December 1991); doi: 10.1117/12.51007
Proc. SPIE 1596, Selective low-temperature chemical vapor deposition of copper from new copper(I) compounds, 0000 (1 December 1991); doi: 10.1117/12.51008
Proc. SPIE 1596, Improved planarization techniques applied to a low dielectric constant polyimide used in multilevel metal ICs, 0000 (1 December 1991); doi: 10.1117/12.51009
Proc. SPIE 1596, Laser-induced metal deposition and laser cutting techniques for fixing IC design errors, 0000 (1 December 1991); doi: 10.1117/12.51010
Reliability and Failure Modes
Proc. SPIE 1596, Technique of assessing contact ohmicity and their relevance to heterostructure devices, 0000 (1 December 1991); doi: 10.1117/12.51011
Proc. SPIE 1596, Electromigration in VLSI metallization, 0000 (1 December 1991); doi: 10.1117/12.51012
Proc. SPIE 1596, Effect of Cu at Al grain boundaries on electromigration behavior in Al thin films, 0000 (1 December 1991); doi: 10.1117/12.51013
Proc. SPIE 1596, Stress-induced voiding in aluminum alloy metallizations, 0000 (1 December 1991); doi: 10.1117/12.51014
Proc. SPIE 1596, Spin-on glasses in the silicon IC: plague or panacea?, 0000 (1 December 1991); doi: 10.1117/12.51015
Proc. SPIE 1596, Electromigration physical modeling of failure in thin film structures, 0000 (1 December 1991); doi: 10.1117/12.51016
Characterization
Proc. SPIE 1596, Application of thermal wave technology to thickness and grain size monitoring of aluminum films, 0000 (1 December 1991); doi: 10.1117/12.51017
Proc. SPIE 1596, Observation of stress voids and grain structure in laser-annealed aluminum using focused ion-beam microscopy, 0000 (1 December 1991); doi: 10.1117/12.51018
Proc. SPIE 1596, Interfacial adhesive strength measurement in a multilayered two-level metal device structure, 0000 (1 December 1991); doi: 10.1117/12.51019
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