PROCEEDINGS VOLUME 1622
EMERGING OE TECHNOLOGIES, BANGALORE, INDIA | 16-16 DECEMBER 1991
Emerging Optoelectronic Technologies
EMERGING OE TECHNOLOGIES, BANGALORE, INDIA
16-16 December 1991
Bangalore, India
Optoelectronic Devices and Integrated Circuits
Proc. SPIE 1622, Optoelectronic devices toward monolithic integration, (16 December 1992);doi: 10.1117/12.634090
Proc. SPIE 1622, Mesoscopic structure for optoelectronics, (16 December 1992);doi: 10.1117/12.635239
Optical Waveguides and Novel Phenomena
Proc. SPIE 1622, Electric field effect in GaInAs/InP quantum wire and quantum box structures and application to intersectional optical switch, (16 December 1992);doi: 10.1117/12.635244
Proc. SPIE 1622, Polarization selective electro-optic effect in coupled quantum-wire arrays, (16 December 1992);doi: 10.1117/12.635245
Optoelectronic Systems
Proc. SPIE 1622, Noise considerations in the design of long haul lightwave communication systems, (16 December 1992);doi: 10.1117/12.635246
Proc. SPIE 1622, Modified Airy function method for the analysis of the tunneling problems in optical waveguide and quantum well structures, (16 December 1992);doi: 10.1117/12.635248
Proc. SPIE 1622, Birefringence dependent multiple quantum well light valves/modulators and logic devices, (16 December 1992);doi: 10.1117/12.636800
Proc. SPIE 1622, Component video signal-to-noise ratio analysis of optical fiber video transmission systems, (16 December 1992);doi: 10.1117/12.636801
Optical Waveguides and Novel Phenomena
Proc. SPIE 1622, Temperature invariance of quantum well modulators using a feedback circuit based on quantum confined stark effect, (16 December 1992);doi: 10.1117/12.636804
Proc. SPIE 1622, Generation of sub-Poisson distribution of light, (16 December 1992);doi: 10.1117/12.636808
Optoelectronic Devices and Integrated Circuits
Proc. SPIE 1622, Acoustic-optic techniques for phased-array antenna processing, (16 December 1992);doi: 10.1117/12.636810
Optoelectronic Systems
Proc. SPIE 1622, Optimal approximate method for the analysis of diffused channel waveguides, (16 December 1992);doi: 10.1117/12.636811
Materials and Fabrication Technologies
Proc. SPIE 1622, Growth and characterization of high quality strained GaAs Epitaxial Layers, (16 December 1992);doi: 10.1117/12.636814
Proc. SPIE 1622, Growth of bismuth silicon oxide and bismuth germanium oxide crystals by Czochralski technique, (16 December 1992);doi: 10.1117/12.636816
Optoelectronic Devices and Integrated Circuits
Proc. SPIE 1622, Nanocomposite sol-gel route to low K ceramic substrates, (16 December 1992);doi: 10.1117/12.636834
Proc. SPIE 1622, Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems, (16 December 1992);doi: 10.1117/12.636835
Materials and Fabrication Technologies
Proc. SPIE 1622, Photoluminescence on InP: effect of surfaces and interfaces, (16 December 1992);doi: 10.1117/12.636841
Proc. SPIE 1622, LPE growth of InP and InGaAs and applications in fibre optics, (16 December 1992);doi: 10.1117/12.636843
Optoelectronic Systems
Proc. SPIE 1622, Silicon ULSI systems: a new communications challenge for optoelectronics, (16 December 1992);doi: 10.1117/12.636845
Proc. SPIE 1622, Placing highways in Manhattan street network, (16 December 1992);doi: 10.1117/12.636847
Proc. SPIE 1622, Binary electro-optic node for self-routed photonic packet switching, (16 December 1992);doi: 10.1117/12.636850
Proc. SPIE 1622, Microprocessor based implementation of discrete walsh transform in an optical computing architecture, (16 December 1992);doi: 10.1117/12.636851
Materials and Fabrication Technologies
Proc. SPIE 1622, Ferroelectric thin films for optical waveguides, (16 December 1992);doi: 10.1117/12.636855
Proc. SPIE 1622, Cr(VI) and Fe(III) doped polymer systems as real-time holographic recording materials, (16 December 1992);doi: 10.1117/12.636856
Optical Waveguides and Novel Phenomena
Proc. SPIE 1622, Ultrafast optics and microwave technology, (16 December 1992);doi: 10.1117/12.636858
Proc. SPIE 1622, Optically controlled characteristics of HEMT, (16 December 1992);doi: 10.1117/12.636865
Proc. SPIE 1622, Design and performance of corrugated waveguide structures based on slab waveguide principles, (16 December 1992);doi: 10.1117/12.636867
Proc. SPIE 1622, Antiresonant decoupling of parallel dielectric waveguides, (16 December 1992);doi: 10.1117/12.636886
Proc. SPIE 1622, An Analytical approach to determination of parameters for grin fibers with fourth-order radial index distribution, (16 December 1992);doi: 10.1117/12.636901
Proc. SPIE 1622, Three-dimensional analysis of a tapered waveguide structure by a doubled-grid finite-differences method, (16 December 1992);doi: 10.1117/12.636904
Proc. SPIE 1622, Modal analysis of discontinuities in diffused optical waveguides, (16 December 1992);doi: 10.1117/12.636902
Materials and Fabrication Technologies
Proc. SPIE 1622, Application of electron beam lithography to produce corrugated surface for DFB lasers, (16 December 1992);doi: 10.1117/12.636907
Proc. SPIE 1622, Rapid thermally annealed ohmic contacts to high temperature Zn implanted InP, (16 December 1992);doi: 10.1117/12.636908
Optical Waveguides and Novel Phenomena
Proc. SPIE 1622, Recording materials based on vinyl polymers for holography and nonlinear optics, (16 December 1992);doi: 10.1117/12.636911
Proc. SPIE 1622, Unified approach to nonlinear pulse propagation in optical fibers and self-focusing, (16 December 1992);doi: 10.1117/12.636917
Proc. SPIE 1622, Optical phase conjugation studies in metal substituted tetraphenyl porphines, (16 December 1992);doi: 10.1117/12.636918
Optoelectronic Devices and Integrated Circuits
Proc. SPIE 1622, Optical feedback induced asymmetries in semiconductor laser characteristic curves, (16 December 1992);doi: 10.1117/12.636922
Proc. SPIE 1622, Tunable UV-VIS-NIR laser, (16 December 1992);doi: 10.1117/12.636924
Proc. SPIE 1622, Polarization characteristics of quantum well lasers, (16 December 1992);doi: 10.1117/12.636925
Proc. SPIE 1622, Optoelectronic image processors: morphological pattern recognition and neural nets, (16 December 1992);doi: 10.1117/12.636927
Optoelectronic Systems
Proc. SPIE 1622, Advanced optoelectronic systems for satellite configuration, (16 December 1992);doi: 10.1117/12.636928
Proc. SPIE 1622, Performance of a dual mode/single mode waveguide coupler as a modal filter, (16 December 1992);doi: 10.1117/12.636929
Proc. SPIE 1622, Light propagation in thin-clad fibers: a coupled-mode theory approach, (16 December 1992);doi: 10.1117/12.636931
Optoelectronic Devices and Integrated Circuits
Proc. SPIE 1622, Advances in quantum well lasers, (16 December 1992);doi: 10.1117/12.636932
Optoelectronic Systems
Proc. SPIE 1622, Wavelength and polarization selectivity in external cavity diode laserswith frequency selective feedback, (16 December 1992);doi: 10.1117/12.636933
Optoelectronic Devices and Integrated Circuits
Proc. SPIE 1622, Characteristics of erbium doped fiber lasers, (16 December 1992);doi: 10.1117/12.636938
Optoelectronic Systems
Proc. SPIE 1622, Integrated optoelectronics for optical interconnections and optical signal processing, (16 December 1992);doi: 10.1117/12.636939
Optical Waveguides and Novel Phenomena
Proc. SPIE 1622, Fabrication of a 2-D integrated optic array illuminator, (16 December 1992);doi: 10.1117/12.636949
Materials and Fabrication Technologies
Proc. SPIE 1622, Effect of controlled vacancy injection by ion implantation on the intermixing of InGa/GaAs quantum wells, (16 December 1992);doi: 10.1117/12.636952
Optoelectronic Devices and Integrated Circuits
Proc. SPIE 1622, Interface structure of CoSi<sub>2</sub> and HoSi<sub>2</sub> epitaxies on silicon, (16 December 1992);doi: 10.1117/12.636955
Materials and Fabrication Technologies
Proc. SPIE 1622, Phonon and alloy disorder scattering in coherently strained SixGel-x/Si quantum wells used in photonic devices, (16 December 1992);doi: 10.1117/12.636959
Optical Waveguides and Novel Phenomena
Proc. SPIE 1622, Negative resistance characteristic in optoelectronic composite device, (16 December 1992);doi: 10.1117/12.636960
Proc. SPIE 1622, High contrast optical switching in electrochromic Prussian blue films for display/window applications, (16 December 1992);doi: 10.1117/12.636961
Proc. SPIE 1622, Defect mapping system for optoelectronic materials, (16 December 1992);doi: 10.1117/12.636962
Proc. SPIE 1622, Fabrication of singlemode waveguide devices by inverse ion-exchange in glass, (16 December 1992);doi: 10.1117/12.636966
Materials and Fabrication Technologies
Proc. SPIE 1622, Preparation of low-dislocation density and semi-insulating InP using LEC technique, (16 December 1992);doi: 10.1117/12.636970
Optical Waveguides and Novel Phenomena
Proc. SPIE 1622, Growth and characterization of GaSb crystals: a promising optoelectronic material, (16 December 1992);doi: 10.1117/12.636971
Optoelectronic Devices and Integrated Circuits
Proc. SPIE 1622, Time domain simulation and modeling of Si-GaAs MSM photodetectors, (16 December 1992);doi: 10.1117/12.636972
Proc. SPIE 1622, Monolithic MSM photodetector/amplifier optical receiver on GaAs substrate, (16 December 1992);doi: 10.1117/12.636973