PROCEEDINGS VOLUME 1632
OE/LASE '92 | 19-24 JANUARY 1992
Optically Activated Switching II
OE/LASE '92
19-24 January 1992
Los Angeles, CA, United States
Applications of Optically Activated Switches
Proc. SPIE 1632, Analysis of waveform generation utilizing striplines and photoconductive switches, 0000 (12 May 1992); doi: 10.1117/12.59052
Proc. SPIE 1632, Characterization of photoconductive impulse generator utilizing a tapered radial transmission line, 0000 (12 May 1992); doi: 10.1117/12.59053
Proc. SPIE 1632, Modeling the effect of deep impurity ionization on GaAs photoconductive switches, 0000 (12 May 1992); doi: 10.1117/12.59054
Proc. SPIE 1632, Analysis of an antenna fed by a frozen-wave generator, 0000 (12 May 1992); doi: 10.1117/12.59055
Proc. SPIE 1632, Optically triggered semiconductor switch for a low-impedance Blumlein generator, 0000 (12 May 1992); doi: 10.1117/12.59056
Proc. SPIE 1632, Requirements for two-mode-interference switch, 0000 (12 May 1992); doi: 10.1117/12.59057
Switch Diagnostics and Testing
Proc. SPIE 1632, Optical measurements of the electric field and temperature distribution in photoconductive GaAs switches, 0000 (12 May 1992); doi: 10.1117/12.59058
Proc. SPIE 1632, Effects of contact formulation and bulk processing on the switching performance of Si-doped Cu-compensated GaAs, 0000 (12 May 1992); doi: 10.1117/12.59059
Proc. SPIE 1632, Effects of doping on photoconductive switches as determined by electro-optic imaging, 0000 (12 May 1992); doi: 10.1117/12.59060
Proc. SPIE 1632, Electroabsorption in high-power photoconductive switches, 0000 (12 May 1992); doi: 10.1117/12.59061
Switch Characterization and Contacts
Proc. SPIE 1632, Review of ohmic contacts to compound semiconductors, 0000 (12 May 1992); doi: 10.1117/12.59062
Proc. SPIE 1632, Dark current characterization of photoconductive switches, 0000 (12 May 1992); doi: 10.1117/12.59063
Proc. SPIE 1632, Deep-level characterization studies for optically controlled semiconductor switch materials using a novel technique, 0000 (12 May 1992); doi: 10.1117/12.59064
Proc. SPIE 1632, Fabrication and characterization of a GaAs lateral optical switch with Ni/Ge/Au ohmic contacts, 0000 (12 May 1992); doi: 10.1117/12.59065
Proc. SPIE 1632, Nonalloyed Pd/Ge/Ti/Pt ohmic contact for the high-power optical switch, 0000 (12 May 1992); doi: 10.1117/12.59066
Optically Activated GaAs Switches
Proc. SPIE 1632, Electrical and optical properties of high-gain GaAs switches, 0000 (12 May 1992); doi: 10.1117/12.59067
Proc. SPIE 1632, GaAs avalanche photoconductive switches: new technological developments, 0000 (12 May 1992); doi: 10.1117/12.59068
Proc. SPIE 1632, Nondestructive evaluation of junction effects in GaAs avalanche photoconductors, 0000 (12 May 1992); doi: 10.1117/12.59069
Switches Made from Other Materials and Breakdown
Proc. SPIE 1632, Optically activated opening switches, 0000 (12 May 1992); doi: 10.1117/12.59070
Proc. SPIE 1632, Optically activated switching in a ZnSe/GaAs heterostructure, 0000 (12 May 1992); doi: 10.1117/12.59071
Proc. SPIE 1632, Electron-beam-activated zinc selenide and diamond switches, 0000 (12 May 1992); doi: 10.1117/12.59072
Proc. SPIE 1632, Power switching with a new material: CdTe:Cl, 0000 (12 May 1992); doi: 10.1117/12.59073
Proc. SPIE 1632, Recent advances in research on photoconductive power switching at the University of Maryland, 0000 (12 May 1992); doi: 10.1117/12.59074
Proc. SPIE 1632, Effect of test environment on the surface breakdown characteristics of photoconducting silicon, 0000 (12 May 1992); doi: 10.1117/12.59075
Proc. SPIE 1632, Modeling of electron-beam-controlled diamond switches, 0000 (12 May 1992); doi: 10.1117/12.59076
Theory and Modeling of Nonlinear Switches
Proc. SPIE 1632, Impact ionization in optically activated switches, 0000 (12 May 1992); doi: 10.1117/12.59077
Proc. SPIE 1632, Analysis of time-dependent current transport in an optically controlled Cu-compensated GaAs switch, 0000 (12 May 1992); doi: 10.1117/12.59078
Proc. SPIE 1632, Lock-on effect in GaAs photoconductive switches, 0000 (12 May 1992); doi: 10.1117/12.59079
Proc. SPIE 1632, Silicon and gallium arsenide vacuum surface flashover, 0000 (12 May 1992); doi: 10.1117/12.59080
Optically Activated GaAs Switches
Proc. SPIE 1632, High-performance single-pulse selector for laser using avalanche transistor driver, 0000 (12 May 1992); doi: 10.1117/12.59081
Switch Diagnostics and Testing
Proc. SPIE 1632, Effect of contact space charge on current ratings of cryogenic silicon photoconductive switches, 0000 (12 May 1992); doi: 10.1117/12.59082
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