PROCEEDINGS VOLUME 1672
MICROLITHOGRAPHY '92 | 8-12 MARCH 1992
Advances in Resist Technology and Processing IX
MICROLITHOGRAPHY '92
8-12 March 1992
San Jose, CA, United States
Chemically Aplified Resists
Proc. SPIE 1672, Effects of polymer end groups on chemical amplification, 0000 (1 June 1992); doi: 10.1117/12.59721
Proc. SPIE 1672, Toward the development of a stable chemically amplified DUV positive photoresist, 0000 (1 June 1992); doi: 10.1117/12.59722
Proc. SPIE 1672, Quantitation of airborne chemical contamination of chemically amplified resists using radiochemical analysis, 0000 (1 June 1992); doi: 10.1117/12.59723
Proc. SPIE 1672, Critical process parameters of an acetal-based deep-UV photoresist, 0000 (1 June 1992); doi: 10.1117/12.59724
Proc. SPIE 1672, Deep-UV resists with improved delay capabilities, 0000 (1 June 1992); doi: 10.1117/12.59725
Proc. SPIE 1672, Characteristics of a chemically amplified silicone-based negative resist in KrF excimer laser lithography, 0000 (1 June 1992); doi: 10.1117/12.59726
Proc. SPIE 1672, Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification, 0000 (1 June 1992); doi: 10.1117/12.59727
Proc. SPIE 1672, Acid diffusion, standing waves, and information theory: a molecular-scale model of chemically amplified resist, 0000 (1 June 1992); doi: 10.1117/12.59728
Novolac-Based Resists
Proc. SPIE 1672, Tert-Butoxycarbonylated novolac resins as chemically amplified imaging materials, 0000 (1 June 1992); doi: 10.1117/12.59729
Proc. SPIE 1672, Novel chemical amplification positive-resist material for EB lithography, 0000 (1 June 1992); doi: 10.1117/12.59730
Proc. SPIE 1672, Percolation view of novolak dissolution and dissolution inhibition, 0000 (1 June 1992); doi: 10.1117/12.59731
Proc. SPIE 1672, Influence of sensitizer spatial distribution on the dissolution mechanism in diazonaphthoquinone resists, 0000 (1 June 1992); doi: 10.1117/12.59732
Proc. SPIE 1672, Design of PACs for high-performance photoresists (I): role of di-esterified PACs having hindered -OH groups, 0000 (1 June 1992); doi: 10.1117/12.59733
Proc. SPIE 1672, Study of photosensitizer for i-line lithography, 0000 (1 June 1992); doi: 10.1117/12.59734
Proc. SPIE 1672, Selectively DNQ-esterified PAC for high-performance positive photoresists, 0000 (1 June 1992); doi: 10.1117/12.59735
Dry-Developable Materials and Processes
Proc. SPIE 1672, Liquid phase silylation for the DESIRE process, 0000 (1 June 1992); doi: 10.1117/12.59736
Proc. SPIE 1672, Ester degradation in the DESIRE process, 0000 (1 June 1992); doi: 10.1117/12.59737
Proc. SPIE 1672, Surface-imaged silicon polymers for 193-nm excimer laser lithography, 0000 (1 June 1992); doi: 10.1117/12.59738
Proc. SPIE 1672, Evolution of MIMMI: a novel surface imaging resist based on metallic surface imaging of organic photoresists, 0000 (1 June 1992); doi: 10.1117/12.59739
Proc. SPIE 1672, Equipment, materials, and process interactions in a surface-imaging process: part II, 0000 (1 June 1992); doi: 10.1117/12.59740
Proc. SPIE 1672, Effective parameters of DESIRE process for controlling resist performance at subhalf to quarter-micron rule, 0000 (1 June 1992); doi: 10.1117/12.59741
Proc. SPIE 1672, Electron cyclotron resonance etching of silylated resist, 0000 (1 June 1992); doi: 10.1117/12.59742
Proc. SPIE 1672, Dry development of resist patterns using RIE based on different electrical conductivity, 0000 (1 June 1992); doi: 10.1117/12.59743
Advanced Resist Materials/Process Modeling and Characterization
Proc. SPIE 1672, Hexafluoroacetone in resist chemistry: a versatile new concept for materials for deep-UV lithography, 0000 (1 June 1992); doi: 10.1117/12.59744
Proc. SPIE 1672, High-speed aqueous-developing negative resist based on triflic-acid-catalyzed epoxy polymerization, 0000 (1 June 1992); doi: 10.1117/12.59745
Proc. SPIE 1672, Comparative study of deep-UV resist processes for 0.35-um technology, 0000 (1 June 1992); doi: 10.1117/12.59746
Proc. SPIE 1672, Modeling of postexposure bake and surface inhibition effects in positive photoresist using absolute thickness data, 0000 (1 June 1992); doi: 10.1117/12.59747
Proc. SPIE 1672, Pattern transfer capabilities of CAMP deep-UV resist, 0000 (1 June 1992); doi: 10.1117/12.59748
Proc. SPIE 1672, Dry development of silylated resist: influence of substrate temperature, 0000 (1 June 1992); doi: 10.1117/12.59749
Proc. SPIE 1672, Correlation of Si wafer FTIR spectra with wafer temperatures and resist durability variations in plasma etching processes, 0000 (1 June 1992); doi: 10.1117/12.59750
Chemically Aplified Resists
Proc. SPIE 1672, Acid generation and acid diffusion in photoresist films, 0000 (1 June 1992); doi: 10.1117/12.59751
Proc. SPIE 1672, Analysis of photosensitive salt distribution in polymer films by 19F multiple-quantum NMR, 0000 (1 June 1992); doi: 10.1117/12.59752
Proc. SPIE 1672, Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist, 0000 (1 June 1992); doi: 10.1117/12.59753
Proc. SPIE 1672, New positive-acting chemically amplified resist system for electron-beam lithography, 0000 (1 June 1992); doi: 10.1117/12.59754
Proc. SPIE 1672, Effect of humidity, residual solvent, and adventitious clean-room contaminants on the performance of AZ-PN, 0000 (1 June 1992); doi: 10.1117/12.59755
Proc. SPIE 1672, Quarter-micron KrF excimer laser lithography with a chemically amplifying negative resist, 0000 (1 June 1992); doi: 10.1117/12.59756
Proc. SPIE 1672, DN 21, DN 41: negative-tone photoresists for deep-UV lithography, 0000 (1 June 1992); doi: 10.1117/12.59757
Proc. SPIE 1672, Lithographic evaluation and characterization of a negative deep-UV resist system for the next generation of DRAMs, 0000 (1 June 1992); doi: 10.1117/12.59758
Novolac-Based Resists
Proc. SPIE 1672, Experimental investigation of a novel dissolution model, 0000 (1 June 1992); doi: 10.1117/12.59759
Proc. SPIE 1672, Studies of dissolution inhibition mechanism of DNQ novolak resists: part III--secondary inhibition with quaternary ammonium salts in development process, 0000 (1 June 1992); doi: 10.1117/12.59760
Proc. SPIE 1672, Structural effects of NQD PAC and novolak resin on resist performance, 0000 (1 June 1992); doi: 10.1117/12.59761
Proc. SPIE 1672, Lithographic performance and dissolution behavior of novolac resins for various developer surfactant systems, 0000 (1 June 1992); doi: 10.1117/12.59762
Proc. SPIE 1672, Improving resist performance by PROMOTE processing, 0000 (1 June 1992); doi: 10.1117/12.59763
Dry-Developable Materials and Processes
Proc. SPIE 1672, Comparison of etching tools for resist pattern transfer, 0000 (1 June 1992); doi: 10.1117/12.59764
Proc. SPIE 1672, In-situ IR study of the kinetics of silylation, 0000 (1 June 1992); doi: 10.1117/12.59765
Proc. SPIE 1672, Quarter-micron deep-UV lithography with silylation process, 0000 (1 June 1992); doi: 10.1117/12.59766
Proc. SPIE 1672, Poly(p-trimethylgermylstyrene sulfone)s as a high-resolution electron-beam resist, 0000 (1 June 1992); doi: 10.1117/12.59767
Proc. SPIE 1672, Silylation processes for 193-nm lithography using acid-catalyzed resists, 0000 (1 June 1992); doi: 10.1117/12.59768
Advanced Resist Materials/Process Modeling and Characterization
Proc. SPIE 1672, Novel resist patterning strategies for the definition of high resolution via holes in polyimide interlayer dielectric, 0000 (1 June 1992); doi: 10.1117/12.59769
Proc. SPIE 1672, Photoresist formulation optimization through the use of statistical design of experimentation, 0000 (1 June 1992); doi: 10.1117/12.59770
Proc. SPIE 1672, Charge transfer approach to negative resists, 0000 (1 June 1992); doi: 10.1117/12.59771
Proc. SPIE 1672, Limitation of removal particles in positive photoresist, 0000 (1 June 1992); doi: 10.1117/12.59772
Proc. SPIE 1672, Physical description of lithographic processes: correlation between bake conditions and photoresist contrast, 0000 (1 June 1992); doi: 10.1117/12.59773
Proc. SPIE 1672, Enhancement of deep-UV patterning integrity and process control using antireflective coating, 0000 (1 June 1992); doi: 10.1117/12.59774
Proc. SPIE 1672, Diazonaphthoquinone-sensitized deep-UV resist materials, 0000 (1 June 1992); doi: 10.1117/12.59775
Proc. SPIE 1672, Efficient approach for experimental characterization of resist profile in electron-beam-exposed resists, 0000 (1 June 1992); doi: 10.1117/12.59776
Proc. SPIE 1672, Fabrication of ultrahigh-quality vertical structures in GaAs, 0000 (1 June 1992); doi: 10.1117/12.59777