PROCEEDINGS VOLUME 1676
SEMICONDUCTORS '92 | 22-22 MARCH 1992
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
SEMICONDUCTORS '92
22-22 March 1992
Somerset, NJ, United States
Advanced Characterization Techniques
Proc. SPIE 1676, In-situ x-ray studies of OMVPE growth, 0000 (2 September 1992); doi: 10.1117/12.137660
Metal-Organic Growth Methods
Proc. SPIE 1676, Real-time optical control of epitaxial III-V semiconductor composition and structure, 0000 (2 September 1992); doi: 10.1117/12.137665
Proc. SPIE 1676, GaAs atomic-layer epitaxy in a rotating disc reactor, 0000 (2 September 1992); doi: 10.1117/12.142660
Proc. SPIE 1676, Vapor transport epitaxy: an advanced growth process for III-V and II-VI semiconductors, 0000 (2 September 1992); doi: 10.1117/12.137640
Proc. SPIE 1676, GaInP/GaAs multiwafer production in a commercial-available AIX 2000 reactor, 0000 (2 September 1992); doi: 10.1117/12.137641
Alloy Systems and Ordering
Proc. SPIE 1676, Ordered-disordered ternary III-V semiconductor alloys, 0000 (2 September 1992); doi: 10.1117/12.137642
Proc. SPIE 1676, Al-Ga-In-As-P alloy system in low-pressure MOVPE, 0000 (2 September 1992); doi: 10.1117/12.137643
Proc. SPIE 1676, Atomic-layer epitaxy of device-quality Al0.3Ga0.7As, 0000 (2 September 1992); doi: 10.1117/12.137644
Growth on Patterned- and Novel- Oriented Substrates
Proc. SPIE 1676, Direct synthesis of III-V semiconductor quantum wires and quantum dots by molecular-beam epitaxy, 0000 (2 September 1992); doi: 10.1117/12.137645
Proc. SPIE 1676, Quantum wires and other novel structures by MBE overgrowth on the cleaved edges of multilayer substrates, 0000 (2 September 1992); doi: 10.1117/12.137646
Advances in Growth Methods
Proc. SPIE 1676, Laser-assisted chemical vapor deposition of device-quality GaAs, 0000 (2 September 1992); doi: 10.1117/12.137647
Growth of Laser Structures
Proc. SPIE 1676, Growth and performance of surface-emitting lasers, 0000 (2 September 1992); doi: 10.1117/12.137648
Proc. SPIE 1676, Structural and optical properties of strained In0.2Ga0.8As-GaAs quantum wells, 0000 (2 September 1992); doi: 10.1117/12.137649
Proc. SPIE 1676, Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates, 0000 (2 September 1992); doi: 10.1117/12.137650
Proc. SPIE 1676, Buried heterostructure formation processes for high-performance devices, 0000 (2 September 1992); doi: 10.1117/12.137651
Novel Materials and Heterostructures
Proc. SPIE 1676, Evaluation of the band offsets of GaAs/GaInP multilayers by electroreflectance, 0000 (2 September 1992); doi: 10.1117/12.137652
Proc. SPIE 1676, Carbon doping of III-V compounds by atomic-layer epitaxy, 0000 (2 September 1992); doi: 10.1117/12.137653
Proc. SPIE 1676, MBE growth of (GaAs)m/(AlAs)n short-period superlattices and their application in fabricating visible lasers, 0000 (2 September 1992); doi: 10.1117/12.137654
Quantum Structures
Proc. SPIE 1676, Fabrication and imaging of quantum-well wire structures, 0000 (2 September 1992); doi: 10.1117/12.137655
Proc. SPIE 1676, Monte Carlo simulation of a "true" quantum wire, 0000 (2 September 1992); doi: 10.1117/12.137656
Proc. SPIE 1676, Photoluminescence and Raman scattering studies of GaAs-AlGaAs quantum dots, 0000 (2 September 1992); doi: 10.1117/12.137657
Proc. SPIE 1676, Zero-dimensional states in nanostructures constricted by double-barrier heterojunctions and H-isolation, 0000 (2 September 1992); doi: 10.1117/12.137658
Proc. SPIE 1676, Quantization of static domains in slim superlattices, 0000 (2 September 1992); doi: 10.1117/12.137659
Proc. SPIE 1676, Resonance phenomenon in double-bend-point contact structures, 0000 (2 September 1992); doi: 10.1117/12.137661
Nanofabrication
Proc. SPIE 1676, Dry-etching process for the fabrication of optoelectronic gratings in III-V substrates, 0000 (2 September 1992); doi: 10.1117/12.137662
Proc. SPIE 1676, Processing of InP and related compounds at nanometer dimensions, 0000 (2 September 1992); doi: 10.1117/12.137663
Proc. SPIE 1676, Direct electron-beam patterning on a nanometer scale of CaF2 layers grown by MBE on silicon <111>, 0000 (2 September 1992); doi: 10.1117/12.137664
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