PROCEEDINGS VOLUME 1680
SEMICONDUCTORS '92 | 22-22 MARCH 1992
High-Speed Electronics and Optoelectronics
IN THIS VOLUME

0 Sessions, 19 Papers, 0 Presentations
SEMICONDUCTORS '92
22-22 March 1992
Somerset, NJ, United States
High-Speed Electronics
Proc. SPIE 1680, High-speed InP-based HBT integrated circuits, 0000 (3 September 1992); doi: 10.1117/12.142553
Proc. SPIE 1680, High-performance AlGaAs/GaAs HBT IC technology, 0000 (3 September 1992); doi: 10.1117/12.137709
Proc. SPIE 1680, Optoelectronic applications of heterojunction bipolar transistor technology: promises and problems, 0000 (3 September 1992); doi: 10.1117/12.137714
Proc. SPIE 1680, Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor, 0000 (3 September 1992); doi: 10.1117/12.137715
Proc. SPIE 1680, Exploratory antimony containing heterojunction bipolar transistors, 0000 (3 September 1992); doi: 10.1117/12.137716
Proc. SPIE 1680, Advanced-power and low-noise HEMT devices and MMICs, 0000 (3 September 1992); doi: 10.1117/12.137717
Proc. SPIE 1680, Comparison of the noise performance of MODFET's, 0000 (3 September 1992); doi: 10.1117/12.137718
Proc. SPIE 1680, X-band "peeled" HEMT amplifier, 0000 (3 September 1992); doi: 10.1117/12.137719
High-Speed Lasers
Proc. SPIE 1680, Short pulse generation using semiconductor lasers, 0000 (3 September 1992); doi: 10.1117/12.137702
Proc. SPIE 1680, Effects of carrier transport on relative intensity noise and modulation response in quantum-well lasers, 0000 (3 September 1992); doi: 10.1117/12.137703
Proc. SPIE 1680, Modulation characteristics of short-cavity strained-layer lasers, 0000 (3 September 1992); doi: 10.1117/12.137704
Proc. SPIE 1680, Photonic integrated circuits, 0000 (3 September 1992); doi: 10.1117/12.137705
Proc. SPIE 1680, Structure-dependent damping in quantum-well lasers, 0000 (3 September 1992); doi: 10.1117/12.137706
High-Speed Photodetectors
Proc. SPIE 1680, Measurement of high-speed photodiodes using DFB heterodyne system with microwave reflectometer, 0000 (3 September 1992); doi: 10.1117/12.137707
High-Speed Lasers
Proc. SPIE 1680, Multiple-quantum-well photonic integrated circuits for pulse generation at 1-10GHz repetition rates, 0000 (3 September 1992); doi: 10.1117/12.137708
High-Speed Photodetectors
Proc. SPIE 1680, InGaAs MSM photodetectors for long-wavelength fiber communications, 0000 (3 September 1992); doi: 10.1117/12.137710
High-Speed Lasers
Proc. SPIE 1680, 16-GHz GaAs/AlGaAs multiple-quantum-well laser with vertically compact waveguide structure, 0000 (3 September 1992); doi: 10.1117/12.137711
High-Speed Photodetectors
Proc. SPIE 1680, Thin film transfer of InAlAs/InGaAs MSM photodetector or InGaAsP lasers onto GaAs or Si substrates, 0000 (3 September 1992); doi: 10.1117/12.137712
Proc. SPIE 1680, AlGaSb/GaSb-based metal-semiconductor-metal and p-i-n photodetectors, 0000 (3 September 1992); doi: 10.1117/12.137713
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