PROCEEDINGS VOLUME 1783
INTERNATIONAL CONFERENCE ON MICROELECTRONICS | 21-23 SEPTEMBER 1992
International Conference of Microelectronics: Microelectronics '92
IN THIS VOLUME

0 Sessions, 79 Papers, 0 Presentations
Sensors  (5)
Materials  (30)
INTERNATIONAL CONFERENCE ON MICROELECTRONICS
21-23 September 1992
Warsaw, Poland
Analysis and Design
Proc. SPIE 1783, Algorithmic measurement theory and application for signal microprocessors, 0000 (1 August 1992); doi: 10.1117/12.141060
Proc. SPIE 1783, Application of the design and control system SEMICROT for bipolar devices, 0000 (1 August 1992); doi: 10.1117/12.141061
Proc. SPIE 1783, VHDL as a specification language for high-level synthesis system, 0000 (1 August 1992); doi: 10.1117/12.141062
Proc. SPIE 1783, Monte Carlo simulation of submicron Si p-MOSFETs, 0000 (1 August 1992); doi: 10.1117/12.141063
Proc. SPIE 1783, PLD-based synthesis of digital circuits, 0000 (1 August 1992); doi: 10.1117/12.130988
Proc. SPIE 1783, Logic decomposition aimed at programmable cell arrays, 0000 (1 August 1992); doi: 10.1117/12.130993
Proc. SPIE 1783, Device modeling for high-speed three-dimensional CMOS/SOI integrated circuits, 0000 (1 August 1992); doi: 10.1117/12.130999
Proc. SPIE 1783, MMIC amplifier for 0.9-2.0 GHz, 0000 (1 August 1992); doi: 10.1117/12.131008
Proc. SPIE 1783, GaAs planar doped barrier diodes for microwave applications, 0000 (1 August 1992); doi: 10.1117/12.131009
Proc. SPIE 1783, X-band GaAs MESFET, 0000 (1 August 1992); doi: 10.1117/12.131010
IC Management Testing
Proc. SPIE 1783, Characterization of degradation processes in MOS VLSI structures, 0000 (1 August 1992); doi: 10.1117/12.131011
Proc. SPIE 1783, Study of the development of failure processes of MOS (MES) LSIC active structures with the help of surface acoustic waves, 0000 (1 August 1992); doi: 10.1117/12.131012
Proc. SPIE 1783, Capacitance measurements at low frequencies in the study of amorphous silicon, 0000 (1 August 1992); doi: 10.1117/12.131013
Proc. SPIE 1783, Digital circuits diagnosis automation on the SEWTIDUE expert system example, 0000 (1 August 1992); doi: 10.1117/12.131014
Proc. SPIE 1783, Some problems of implementation: ANSI/IEEE Std 1149.1 in microcontroller design, 0000 (1 August 1992); doi: 10.1117/12.131015
Proc. SPIE 1783, Architecture and some properties of digital circuits with boundary scan, 0000 (1 August 1992); doi: 10.1117/12.131016
Proc. SPIE 1783, Some checking algorithms of digital circuits testability, 0000 (1 August 1992); doi: 10.1117/12.131017
Proc. SPIE 1783, Testing method of DTMF circuits for telephony, 0000 (1 August 1992); doi: 10.1117/12.131018
Proc. SPIE 1783, Testing of semantic integrity based on associative group code propagation, 0000 (1 August 1992); doi: 10.1117/12.131019
Devices and Circuits
Proc. SPIE 1783, Macro management of microelectronics in India in 1990s, 0000 (1 August 1992); doi: 10.1117/12.131020
Proc. SPIE 1783, CUPLAND: behavioral level description compiler for designing of PLD-based circuits, 0000 (1 August 1992); doi: 10.1117/12.131021
Proc. SPIE 1783, Low-frequency noise in polycrystalline elements of semiconductor devices, 0000 (1 August 1992); doi: 10.1117/12.131022
Proc. SPIE 1783, Parameter determination of the polysilicon emitter interface for bipolar transistor, 0000 (1 August 1992); doi: 10.1117/12.131023
Proc. SPIE 1783, Polycrystalline resistors with current-induced tuning of the electrical parameters, 0000 (1 August 1992); doi: 10.1117/12.131024
Proc. SPIE 1783, Two-dimensional electrothermal analysis of thyristor with shorted emitter, 0000 (1 August 1992); doi: 10.1117/12.131025
Proc. SPIE 1783, Improvement of the efficiency of acoustic amplifiers, 0000 (1 August 1992); doi: 10.1117/12.131026
Proc. SPIE 1783, Information-writing mechanisms in thin-film metal-ferroelectric-insulator-semiconductor structures, 0000 (1 August 1992); doi: 10.1117/12.131027
Proc. SPIE 1783, High-voltage MOS transistors compatible with CMOS VLSI technology, 0000 (1 August 1992); doi: 10.1117/12.131028
Sensors
Proc. SPIE 1783, Three-lead temperature-current sensor and its application, 0000 (1 August 1992); doi: 10.1117/12.131029
Proc. SPIE 1783, Microelectronic NH3 sensor on the base of poly-Si films, 0000 (1 August 1992); doi: 10.1117/12.131030
Proc. SPIE 1783, Possible application of peak effect as high-Tc superconducting sensor for detecting magnetic field sweep rate, 0000 (1 August 1992); doi: 10.1117/12.131031
Proc. SPIE 1783, Thick- and thin-film heaters for gas sensors, 0000 (1 August 1992); doi: 10.1117/12.131032
Proc. SPIE 1783, Silicon pressure sensor for biomedicine applications, 0000 (1 August 1992); doi: 10.1117/12.131033
Materials
Proc. SPIE 1783, Disorder of GaAs single crystals resulting from heat treatment, 0000 (1 August 1992); doi: 10.1117/12.131034
Proc. SPIE 1783, Role of metallization type in semi-insulating GaAs-based optoelectronic switches, 0000 (1 August 1992); doi: 10.1117/12.131035
Proc. SPIE 1783, Gettering annealing effect on deep-level defect concentration in epitaxial GaAs obtained by chloride method, 0000 (1 August 1992); doi: 10.1117/12.131036
Proc. SPIE 1783, Influence of silicon surface carbon contamination on oxide quality and SiO2-Si systems properties, 0000 (1 August 1992); doi: 10.1117/12.131037
Proc. SPIE 1783, Radiation hardness of silicon dioxide dielectric strength in silicon MOS structures, 0000 (1 August 1992); doi: 10.1117/12.131038
Proc. SPIE 1783, Sharp prismatoidal tips for vacuum microelectronics on silicon, 0000 (1 August 1992); doi: 10.1117/12.131039
Proc. SPIE 1783, Investigation of time stability porous silicon layer, 0000 (1 August 1992); doi: 10.1117/12.131040
Proc. SPIE 1783, Etching of silicon in CBrF3: formation of deep trenches and plasma diagnostics, 0000 (1 August 1992); doi: 10.1117/12.131041
Plenary Session
Proc. SPIE 1783, Recent progress in neural networks, 0000 (1 August 1992); doi: 10.1117/12.131042
Materials
Proc. SPIE 1783, New method of thermal placement in hybrid circuits, 0000 (1 August 1992); doi: 10.1117/12.131043
Proc. SPIE 1783, Growth kinetics and properties of ultrathin films of silicon dioxide, 0000 (1 August 1992); doi: 10.1117/12.131044
Proc. SPIE 1783, Control and characterization of semiconductor superlattices by grazing: incidence x-ray diffraction method, 0000 (1 August 1992); doi: 10.1117/12.131045
Proc. SPIE 1783, Formation of submicron diffused layers by multipulse incoherent light treatment, 0000 (1 August 1992); doi: 10.1117/12.131046
Proc. SPIE 1783, Vacuum-plasma deposition of resist film on substrate by means of copolymerization of monomers in the afterglow zone of rf discharge, 0000 (1 August 1992); doi: 10.1117/12.131047
Proc. SPIE 1783, Radiation-induced modification of the dry vacuum photoresist layers during ion implantation, 0000 (1 August 1992); doi: 10.1117/12.131048
Proc. SPIE 1783, Pulsed laser-excited microwave photoconductivity applications to high-resolution defect diagnostics of ion- and laser-beam-modified semiconductor surface, 0000 (1 August 1992); doi: 10.1117/12.131049
Plenary Session
Proc. SPIE 1783, Current trends in molecular sensing, 0000 (1 August 1992); doi: 10.1117/12.131050
Proc. SPIE 1783, Vacuum microelectronics: present status and development trends, 0000 (1 August 1992); doi: 10.1117/12.131051
Materials
Proc. SPIE 1783, Physical and technological aspects of anomalous current-voltage characteristics of Schottky diodes at low temperatures, 0000 (1 August 1992); doi: 10.1117/12.131052
Proc. SPIE 1783, Influence of implanted ion charge on electrophysical parameters of formed structures, 0000 (1 August 1992); doi: 10.1117/12.131053
Proc. SPIE 1783, Reduction of residual doping in molecular-beam epitaxial GaAs, 0000 (1 August 1992); doi: 10.1117/12.131054
Proc. SPIE 1783, Spectroscopic inspection of oxygen ordering in Y-Ba-Cu-O, 0000 (1 August 1992); doi: 10.1117/12.131055
Proc. SPIE 1783, Traps in neutron-transmutation-doped silicon introduced by proton irradiation, 0000 (1 August 1992); doi: 10.1117/12.131056
Proc. SPIE 1783, Surrounding medium parameter control devices on the basis of magnetic bubble conducting materials, 0000 (1 August 1992); doi: 10.1117/12.131057
Proc. SPIE 1783, 600-degree C thermal oxidation of amorphous LPCVD silicon for thin-filmtransistor application, 0000 (1 August 1992); doi: 10.1117/12.131058
Proc. SPIE 1783, Properties of heterostructures for pseudomorphic HEMTs, 0000 (1 August 1992); doi: 10.1117/12.131059
Proc. SPIE 1783, Advanced MESFET burn-in method and equipment, 0000 (1 August 1992); doi: 10.1117/12.131060