PROCEEDINGS VOLUME 1788
FIBERS '92 | 8-11 SEPTEMBER 1992
Sources and Detectors for Fiber Communications
FIBERS '92
8-11 September 1992
Boston, MA, United States
Quantum-Well Lasers I: Materials Technology
Proc. SPIE 1788, Development of GaInAsP/GaAs strained-layer quantum-well diode lasers, 0000 (16 February 1993); doi: 10.1117/12.141096
Proc. SPIE 1788, InGaAs/AlGaAs strained quantum-well diode lasers, 0000 (16 February 1993); doi: 10.1117/12.141105
Proc. SPIE 1788, AlGaInP materials grown by elemental-source molecular beam epitaxy, 0000 (16 February 1993); doi: 10.1117/12.141111
Proc. SPIE 1788, Low-threshold visible laser diodes for high-power applications, 0000 (16 February 1993); doi: 10.1117/12.141112
Proc. SPIE 1788, Low-threshold InGaAs/GaAs strained-layer quantum-well lasers (lambda=0.98 micron) with GaInP cladding layers grown by chemical beam epitaxy, 0000 (16 February 1993); doi: 10.1117/12.141113
Nonplanar/Selective-Area Deposition and Devices
Proc. SPIE 1788, Temperature-engineered growth of low-threshold lasers on nonplanar substrates, 0000 (16 February 1993); doi: 10.1117/12.141114
Proc. SPIE 1788, Shadow-masked growth and its applications, 0000 (16 February 1993); doi: 10.1117/12.141115
Proc. SPIE 1788, Modeling of transport and film growth over patterned substrates, 0000 (16 February 1993); doi: 10.1117/12.141116
Grating Devices
Proc. SPIE 1788, Integration of InP grating-based DEMUX with pin array for monolithic WDM detection, 0000 (16 February 1993); doi: 10.1117/12.141097
Proc. SPIE 1788, Measurements of dynamic linewidth enhancement factor and damping rate for distributed-feedback lasers, 0000 (16 February 1993); doi: 10.1117/12.141098
Quantum-Well Lasers II: Theory and Characteristics
Proc. SPIE 1788, InGaAs/GaAs strained quantum-well lasers, 0000 (16 February 1993); doi: 10.1117/12.141099
Proc. SPIE 1788, Self-consistent calculation of temperature profiles in proton-implanted top-surface-emitting diode lasers, 0000 (16 February 1993); doi: 10.1117/12.141100
Proc. SPIE 1788, InGaAsP/InGaAs multi-quantum-well distributed-Bragg-reflector lasers grown by chemical beam epitaxy, 0000 (16 February 1993); doi: 10.1117/12.141101
Proc. SPIE 1788, Effect of top-contact geometry on spreading resistance in proton-implanted vertical-cavity surface-emitting lasers, 0000 (16 February 1993); doi: 10.1117/12.141102
Transmitters, Receivers, and Systems
Proc. SPIE 1788, Applications of multichip modules to advanced avionics systems, 0000 (16 February 1993); doi: 10.1117/12.141103
Proc. SPIE 1788, Dual pin photodetector with very low parasitic series interconnection, 0000 (16 February 1993); doi: 10.1117/12.141104
Proc. SPIE 1788, High-performance four-wavelength laser transmitter, 0000 (16 February 1993); doi: 10.1117/12.141106
Proc. SPIE 1788, Characterization of noise in semiconductor lasers and its influence in a practical FSK link, 0000 (16 February 1993); doi: 10.1117/12.141107
Proc. SPIE 1788, Theoretical limitations of broadband matching networks in PIN-FET receivers, 0000 (16 February 1993); doi: 10.1117/12.141108
Proc. SPIE 1788, Transmitter and receiver modules for fiber-to-the-home, 0000 (16 February 1993); doi: 10.1117/12.141109
Quantum-Well Lasers II: Theory and Characteristics
Proc. SPIE 1788, High-yield single-mode operation of 1.55 um strained-layer multi-quantum-well DFB lasers using mixed-index/gain-coupling structure, 0000 (16 February 1993); doi: 10.1117/12.141110
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