PROCEEDINGS VOLUME 1802
MICROELECTRONIC PROCESSING '92 | 20-25 SEPTEMBER 1992
Microelectronics Manufacturing and Reliability
MICROELECTRONIC PROCESSING '92
20-25 September 1992
San Jose, CA, United States
Design for Manufacturability and Reliability
Proc. SPIE 1802, Application of concept selection methodology in IC process design, 0000 (14 January 1993); doi: 10.1117/12.139339
Proc. SPIE 1802, Implications of scaling on static RAM bit cell stability and reliability, 0000 (14 January 1993); doi: 10.1117/12.139349
Proc. SPIE 1802, Characterization of PECVD process-induced degradation of EEPROM reliability, 0000 (14 January 1993); doi: 10.1117/12.139358
Proc. SPIE 1802, Strategy for continuous improvement in IC manufacturability, yield, and reliability, 0000 (14 January 1993); doi: 10.1117/12.139359
Built-in Reliability by Controlling Defects
Proc. SPIE 1802, Improving built-in product reliability through the efficient identification of nonrandom contamination events, 0000 (14 January 1993); doi: 10.1117/12.139360
Proc. SPIE 1802, Particle evaluation/control of the Ti/TiN barrier layer in BiCMOS processing, 0000 (14 January 1993); doi: 10.1117/12.139361
Proc. SPIE 1802, Defect reduction in the resist apply area, 0000 (14 January 1993); doi: 10.1117/12.139362
Proc. SPIE 1802, Defect reduction on the metal sputter cassette transfer system, 0000 (14 January 1993); doi: 10.1117/12.139363
Failure Analysis and Techniques
Proc. SPIE 1802, Lifetest IC failures due to metal extrusion and migration resulting from process-induced stress relief, 0000 (14 January 1993); doi: 10.1117/12.139340
Proc. SPIE 1802, Example of the `upstream approach` methodology: an investigation of open-contact failures in ASIC devices, 0000 (14 January 1993); doi: 10.1117/12.139341
Proc. SPIE 1802, Investigation of particle-induced timing sensitivity in one-megabit DRAMs, 0000 (14 January 1993); doi: 10.1117/12.139342
Proc. SPIE 1802, Imaging gate oxide ruptures, 0000 (14 January 1993); doi: 10.1117/12.139343
Proc. SPIE 1802, Failure analysis for improved electromigration performance, 0000 (14 January 1993); doi: 10.1117/12.139344
Device Degradation and Stress Testing
Proc. SPIE 1802, Wafer level reliability, 0000 (14 January 1993); doi: 10.1117/12.139345
Proc. SPIE 1802, Investigation into bake-reversible low-level ESD-induced leakage, 0000 (14 January 1993); doi: 10.1117/12.139346
Proc. SPIE 1802, Use of the charge-induced voltage alteration technique to analyze precursors to dielectric breakdown, 0000 (14 January 1993); doi: 10.1117/12.139347
Design for Manufacturability and Reliability
Proc. SPIE 1802, Etching-related reverse short channel effect in buried channel P-MOSFET, 0000 (14 January 1993); doi: 10.1117/12.139348
Semiconductor Device Performance and Reliability
Proc. SPIE 1802, Impact of statistics on hot-carrier lifetime estimates of n-channel MOSFETs, 0000 (14 January 1993); doi: 10.1117/12.139350
Proc. SPIE 1802, Maximization of nMOSFET hot-carrier injection stability through optimization of device and process design, 0000 (14 January 1993); doi: 10.1117/12.139351
Proc. SPIE 1802, Breakdown voltage of submicron MOSFETs in fully depleted SOI, 0000 (14 January 1993); doi: 10.1117/12.139352
Proc. SPIE 1802, Effects of hot light holes in n-channel silicon-on-sapphire MOSFETs, 0000 (14 January 1993); doi: 10.1117/12.139353
Proc. SPIE 1802, Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology, 0000 (14 January 1993); doi: 10.1117/12.139354
Proc. SPIE 1802, Temperature dependence of hot-carrier lifetime due to trapped charge and interface state generation, 0000 (14 January 1993); doi: 10.1117/12.139355
Proc. SPIE 1802, Hot-carrier effects in thin-film, p-channel, hydrogen-passivated polysilicon-on-insulator LDD MOSFETs, 0000 (14 January 1993); doi: 10.1117/12.139356
Proc. SPIE 1802, Characterization of polysilicon thin-film resistors with irreversible resistance transition, 0000 (14 January 1993); doi: 10.1117/12.139357
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