PROCEEDINGS VOLUME 1803
MICROELECTRONIC PROCESSING '92 | 20-25 SEPTEMBER 1992
Advanced Techniques for Integrated Circuit Processing II
MICROELECTRONIC PROCESSING '92
20-25 September 1992
San Jose, CA, United States
Polysilicon Dry Etching
Proc. SPIE 1803, Microtrenching during polysilicon plasma etch, 0000 (16 April 1993); doi: 10.1117/12.142906
Proc. SPIE 1803, Sloped etching of highly phosphorous doped polysilicon developed with response surface methodology, 0000 (16 April 1993); doi: 10.1117/12.142914
Proc. SPIE 1803, Profiles and chemistry effects in polysilicon and tungsten silicide EPROM 'stack' etching, 0000 (16 April 1993); doi: 10.1117/12.142922
Proc. SPIE 1803, Controlling polymer formation during polysilicon etching in a magnetically enhanced reactive ion etcher, 0000 (16 April 1993); doi: 10.1117/12.142931
Proc. SPIE 1803, High-aspect-ratio trench etching, 0000 (16 April 1993); doi: 10.1117/12.142936
Plasma Processing of Materials
Proc. SPIE 1803, Effects of H2O on atomic hydrogen generation in hydrogen plasma, 0000 (16 April 1993); doi: 10.1117/12.142937
Proc. SPIE 1803, Semi-integrated SOG/TEOS etchback process for multimetal submicron devices, 0000 (16 April 1993); doi: 10.1117/12.142938
Proc. SPIE 1803, Chamber contamination in ashing processes of ion-implanted photoresist, 0000 (16 April 1993); doi: 10.1117/12.142939
Proc. SPIE 1803, Etching of TiN local interconnects using HBr in a triode reactor with magnetic confinement, 0000 (16 April 1993); doi: 10.1117/12.142907
Proc. SPIE 1803, New method for etching rate and resist profile control in O2RIE, 0000 (16 April 1993); doi: 10.1117/12.142908
Proc. SPIE 1803, Plasma etching of silylated photoresist: a study of mechanisms, 0000 (16 April 1993); doi: 10.1117/12.142909
Proc. SPIE 1803, Effect of bulk doping on the etching rate of silicon by halogen atoms, 0000 (16 April 1993); doi: 10.1117/12.143240
Plasma Process Modeling
Proc. SPIE 1803, Modeling of high-density plasma sources, 0000 (16 April 1993); doi: 10.1117/12.142910
Proc. SPIE 1803, On-line control of single-wafer plasma etch process, 0000 (16 April 1993); doi: 10.1117/12.142911
Proc. SPIE 1803, Development of controlling the self-bias voltage and its appraisal by means of estimating ion damages, 0000 (16 April 1993); doi: 10.1117/12.142912
Proc. SPIE 1803, Gate oxide damage and evaluation techniques, 0000 (16 April 1993); doi: 10.1117/12.142913
High-Density Plasma Sources
Proc. SPIE 1803, Characterization of a high-density plasma source for dry develop, 0000 (16 April 1993); doi: 10.1117/12.142915
Proc. SPIE 1803, MORI (TM) high-density rf plasma source etching of polysilicon and metal films on wafers, 0000 (16 April 1993); doi: 10.1117/12.142916
Proc. SPIE 1803, Introduction of a new high-density plasma reactor concept for high-aspect-ratio oxide etching, 0000 (16 April 1993); doi: 10.1117/12.142917
Proc. SPIE 1803, Computer-aided design tools for plasma etchers, 0000 (16 April 1993); doi: 10.1117/12.142918
Proc. SPIE 1803, Transformer-coupled plasma technology for sub-half-micron etching, 0000 (16 April 1993); doi: 10.1117/12.142919
Plasma Processing of Materials
Proc. SPIE 1803, New dry-development process of trilayer resist systems for advanced lithography, 0000 (16 April 1993); doi: 10.1117/12.142920
High-Density Plasma Sources
Proc. SPIE 1803, Optimally stable electron cyclotron resonance plasma generation for precise ULSI patterning, 0000 (16 April 1993); doi: 10.1117/12.142921
Integrated Sensors and Control Strategies
Proc. SPIE 1803, In-situ monitoring of submicron polysilicon linewidths using diffraction gratings, 0000 (16 April 1993); doi: 10.1117/12.142923
Proc. SPIE 1803, Noncontact temperature monitoring of semiconductors by optical absorption edge sensing, 0000 (16 April 1993); doi: 10.1117/12.142924
Proc. SPIE 1803, In-situ spectral ellipsometry for real-time thickness measurement and control, 0000 (16 April 1993); doi: 10.1117/12.142925
Proc. SPIE 1803, Electrical measurements for monitoring and control of rf plasma processing, 0000 (16 April 1993); doi: 10.1117/12.142926
Proc. SPIE 1803, Closed-loop temperature control system for a low-temperature etch chuck, 0000 (16 April 1993); doi: 10.1117/12.142927
Multichamber Processing and Cluster Systems
Proc. SPIE 1803, Process control improvements realized in a vertical reactor cluster tool, 0000 (16 April 1993); doi: 10.1117/12.142928
Proc. SPIE 1803, High-pressure CVD tungsten-stud formation using RIE cluster processes, 0000 (16 April 1993); doi: 10.1117/12.142929
Proc. SPIE 1803, Application-specific resist stripping with integrated processing in a single multiple-process chamber, 0000 (16 April 1993); doi: 10.1117/12.142930
Proc. SPIE 1803, Methodology for optimizing cost of ownership, 0000 (16 April 1993); doi: 10.1117/12.142932
Compound Semiconductor Device Processing
Proc. SPIE 1803, Annealing effects on heavily C-doped GaAs and InGaAs films, 0000 (16 April 1993); doi: 10.1117/12.142933
Integrated Sensors and Control Strategies
Proc. SPIE 1803, Recent in-situ studies of the evolution of surfaces and interfaces of thin films by spectroscopic phase-modulated ellipsometry, 0000 (16 April 1993); doi: 10.1117/12.142934
Polysilicon Dry Etching
Proc. SPIE 1803, Deep trench process performance enhancements in an MERIE reactor, 0000 (16 April 1993); doi: 10.1117/12.142935
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