PROCEEDINGS VOLUME 1804
MICROELECTRONIC PROCESSING '92 | 20-25 SEPTEMBER 1992
Rapid Thermal and Laser Processing
MICROELECTRONIC PROCESSING '92
20-25 September 1992
San Jose, CA, United States
Modeling and Equipment Design
Proc. SPIE 1804, RTP temperature control requirement for submicron device fabrication, 0000 (16 March 1993); doi: 10.1117/12.142078
Proc. SPIE 1804, Optical and thermal modeling of a rapid thermal processor, 0000 (16 March 1993); doi: 10.1117/12.142085
Proc. SPIE 1804, Contribution to optimal lamp design in rapid thermal processing, 0000 (16 March 1993); doi: 10.1117/12.142091
Proc. SPIE 1804, In-situ temperature control for RTP via thermal expansion measurement, 0000 (16 March 1993); doi: 10.1117/12.142092
Rapid Thermal and Laser-Induced Deposition of Semiconductors and Dielectrics
Proc. SPIE 1804, Laser-enhanced CVD for low-temperature Si epitaxy, 0000 (16 March 1993); doi: 10.1117/12.142093
Proc. SPIE 1804, Laser-assisted epitaxy of III-V compounds, 0000 (16 March 1993); doi: 10.1117/12.142094
Proc. SPIE 1804, Using lasers to understand and control the chemistry of semiconductor-related precursors, 0000 (16 March 1993); doi: 10.1117/12.142079
Proc. SPIE 1804, GeSi infrared photodetectors grown by rapid thermal CVD, 0000 (16 March 1993); doi: 10.1117/12.142080
Proc. SPIE 1804, Rapid thermal oxidation for VLSI gate dielectrics applications, 0000 (16 March 1993); doi: 10.1117/12.142081
Proc. SPIE 1804, Forming of 'contact window' submicron topological structure by laser vacuum lithography, 0000 (16 March 1993); doi: 10.1117/12.142082
Laser Direct Write and Ablation
Proc. SPIE 1804, Patterned Schottky barrier solar cells, 0000 (16 March 1993); doi: 10.1117/12.142083
Proc. SPIE 1804, Excimer laser ablation of Cr-contaminated polyimide, 0000 (16 March 1993); doi: 10.1117/12.142084
Proc. SPIE 1804, Laser engraving, 0000 (16 March 1993); doi: 10.1117/12.142086
Proc. SPIE 1804, Laser processing for multichip module customization, 0000 (16 March 1993); doi: 10.1117/12.142087
Proc. SPIE 1804, Laser coalescence of gold clusters in gold-fluorocarbon composite films, 0000 (16 March 1993); doi: 10.1117/12.142088
Proc. SPIE 1804, Laser repair of flat panel displays, 0000 (16 March 1993); doi: 10.1117/12.142089
Rapid Thermal and Laser-Induced Deposition of Semiconductors and Dielectrics
Proc. SPIE 1804, Doping of and outdiffusion from tungsten silicide films using gas immersion laser doping, 0000 (16 March 1993); doi: 10.1117/12.142090
Modeling and Equipment Design
Proc. SPIE 1804, Seamless application of rapid thermal processing in manufacturing, 0000 (16 March 1993); doi: 10.1117/12.142666
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