PROCEEDINGS VOLUME 1813
INTERNATIONAL SYMPOSIUM ON OPTOELECTRONICS IN COMPUTERS, COMMUNICATIONS, AND CONTROL | 13-18 DECEMBER 1992
Optoelectronic Component Technologies
INTERNATIONAL SYMPOSIUM ON OPTOELECTRONICS IN COMPUTERS, COMMUNICATIONS, AND CONTROL
13-18 December 1992
Hsinchu, Taiwan
Optoelectronic Devices: Laser Diodes
Proc. SPIE 1813, High-temperature InGaAs strained-quantum-well lasers (Invited Paper), 0000 (23 October 1992); doi: 10.1117/12.131227
Proc. SPIE 1813, Growth mode at the initial stage of InxGa1-xAs (0.28<x<1) on (100) GaAs by molecular-beam epitaxy, 0000 (23 October 1992); doi: 10.1117/12.131228
Proc. SPIE 1813, Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection, 0000 (23 October 1992); doi: 10.1117/12.131229
Proc. SPIE 1813, Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays, 0000 (23 October 1992); doi: 10.1117/12.131230
Proc. SPIE 1813, Ridge-waveguide modified triple-quantum-well high-power AlGaAs laser grown by MOVPE, 0000 (23 October 1992); doi: 10.1117/12.131231
Optical Interconnect
Proc. SPIE 1813, Board-to-board optical free-space interconnect: models and validations, 0000 (23 October 1992); doi: 10.1117/12.131232
Proc. SPIE 1813, Analysis and design of large optical interconnection networks, 0000 (23 October 1992); doi: 10.1117/12.131233
Proc. SPIE 1813, Broad-bandwidth substrate-mode holograms for optical interconnects, 0000 (23 October 1992); doi: 10.1117/12.131234
Proc. SPIE 1813, Measurement and modeling of FM response of DFB laser under direct high-speed current modulation, 0000 (23 October 1992); doi: 10.1117/12.131235
Proc. SPIE 1813, Design of integrated-mirror etalons for photonic switching, 0000 (23 October 1992); doi: 10.1117/12.131236
Proc. SPIE 1813, Fiber and channel waveguide coupling improvement by mode pattern control, 0000 (23 October 1992); doi: 10.1117/12.131237
Functional and Passive Devices
Proc. SPIE 1813, Semiconductor optical switch with MOCVD-grown low-barrier quantum wells, 0000 (23 October 1992); doi: 10.1117/12.131238
Proc. SPIE 1813, Novel 0.98/1.55-um dichroic coupler based on lithium niobate, 0000 (23 October 1992); doi: 10.1117/12.131239
Proc. SPIE 1813, Fabrication of a LiNbO3 optical waveguide lens by titanium-indiffused proton-exchanged technique, 0000 (23 October 1992); doi: 10.1117/12.131240
Proc. SPIE 1813, Instability in surface-emitting lasers due to external optical feedback, 0000 (23 October 1992); doi: 10.1117/12.131241
Proc. SPIE 1813, Characteristics of deep-red (770-nm) superlattice surface-emitting lasers, 0000 (23 October 1992); doi: 10.1117/12.131242
Optoelectronic Devices-Light Emitting Diodes
Proc. SPIE 1813, Central wavelength of the electrical injection luminescence spectra of double-heterostructure AlGaAs light-emitting diodes, 0000 (23 October 1992); doi: 10.1117/12.131243
Proc. SPIE 1813, AlGaInP green light-emitting diode, 0000 (23 October 1992); doi: 10.1117/12.131244
Proc. SPIE 1813, AlGaAs/GaAs lens-shaped LED with high efficiency and narrow field pattern, 0000 (23 October 1992); doi: 10.1117/12.131245
Proc. SPIE 1813, InGaSb/GaSb strained quantum wells by MOCVD, 0000 (23 October 1992); doi: 10.1117/12.131246
Proc. SPIE 1813, Analysis of electrical properties of delta-doped layers, 0000 (23 October 1992); doi: 10.1117/12.131247
Proc. SPIE 1813, Nd3+-doped fiber ring laser pumped by Ti:Al2O3 tunable laser, 0000 (23 October 1992); doi: 10.1117/12.131248
Poster Session
Proc. SPIE 1813, Hybrid distributed-node fiber optic passive coupler structures, 0000 (23 October 1992); doi: 10.1117/12.131249
Proc. SPIE 1813, Critical comparison of DH, SCH, and GRIN-SCH-SQW 780-nm ridge-waveguide lasers, 0000 (23 October 1992); doi: 10.1117/12.131250
Proc. SPIE 1813, Novel substrate-mode grating structure for wavelength-division demultiplexing, 0000 (23 October 1992); doi: 10.1117/12.131251
Proc. SPIE 1813, In-situ observation of HB GaAs crystal growth, 0000 (23 October 1992); doi: 10.1117/12.131252
Proc. SPIE 1813, Analysis of the effects of traversing torch and deposited layer thickness on particle deposition in the modified chemical vapor deposition process, 0000 (23 October 1992); doi: 10.1117/12.131253
Proc. SPIE 1813, InxGa1-xAsyP1-y (0.53<x<1, 0<y<1) compound semiconductor for laser diode structures by organometallic vapor-phase epitaxy, 0000 (23 October 1992); doi: 10.1117/12.131254
Proc. SPIE 1813, Theoretical study of optical properties of III-V compound semiconductor quantum-well structures, 0000 (23 October 1992); doi: 10.1117/12.131255
Proc. SPIE 1813, Studies on quantum-well laser, 0000 (23 October 1992); doi: 10.1117/12.131256
Proc. SPIE 1813, Studies on surface passivation of GaAs by P2S5/(NH4)2S and (NH4)2Sx sulfurization techniques, 0000 (23 October 1992); doi: 10.1117/12.131257
Proc. SPIE 1813, Temporal characteristics of a gain-switched Ti:sapphire laser, 0000 (23 October 1992); doi: 10.1117/12.131258
Proc. SPIE 1813, Beam quality improvement of slab lasers, 0000 (23 October 1992); doi: 10.1117/12.131259
Proc. SPIE 1813, Nonlinearity enhancement at boundary promoting spatial soliton emission, 0000 (23 October 1992); doi: 10.1117/12.131260
Proc. SPIE 1813, Coupling between single-mode fibers and on-chip optical waveguides for optical interconnects, 0000 (23 October 1992); doi: 10.1117/12.131261
Invited Session
Proc. SPIE 1813, AlGaSb/GaSb metal-semiconductor-metal detectors grown on InP substrates, 0000 (23 October 1992); doi: 10.1117/12.131262
Proc. SPIE 1813, Reliability of high-power semiconductor laser arrays, 0000 (23 October 1992); doi: 10.1117/12.131263
Poster Session
Proc. SPIE 1813, High-power 630-640nm GaInP/GaAlInP laser diodes, 0000 (23 October 1992); doi: 10.1117/12.131264
Proc. SPIE 1813, High-performance surface-emitting lasers with dry-etched facets, 0000 (23 October 1992); doi: 10.1117/12.131265
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