PROCEEDINGS VOLUME 1850
OE/LASE'93: OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCEAND ENGINEERING | 17-22 JANUARY 1993
Laser Diode Technology and Applications V
OE/LASE'93: OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCEAND ENGINEERING
17-22 January 1993
Los Angeles, CA, United States
High-Power Coherent Large-Aperture Sources
Proc. SPIE 1850, High-power high-efficiency antiguide laser arrays, 0000 (16 June 1993); doi: 10.1117/12.146893
Proc. SPIE 1850, Coherent 1-W cw operation of large-aperture resonant arrays of antiguides, 0000 (16 June 1993); doi: 10.1117/12.146904
Proc. SPIE 1850, Self-stabilization of fundamental in-phase mode in resonant antiguided laser arrays, 0000 (16 June 1993); doi: 10.1117/12.146912
Proc. SPIE 1850, Single-mode ARROW-type diode lasers, 0000 (16 June 1993); doi: 10.1117/12.146921
Proc. SPIE 1850, Single-spatial-mode tapered amplifiers and oscillators, 0000 (16 June 1993); doi: 10.1117/12.146929
Proc. SPIE 1850, Coherent high-power operation of InGaAsP/InGaAs multiple-quantum-well active-grating surface-emitting amplified lasers, 0000 (16 June 1993); doi: 10.1117/12.146932
Proc. SPIE 1850, High-power diffraction-limited cw optical amplifiers, 0000 (16 June 1993); doi: 10.1117/12.146933
Proc. SPIE 1850, High-brightness unstable resonator semiconductor lasers, 0000 (16 June 1993); doi: 10.1117/12.146934
Vertical-Cavity Lasers
Proc. SPIE 1850, InGaAsP vertical-cavity lasers, 0000 (16 June 1993); doi: 10.1117/12.146894
Proc. SPIE 1850, Optoelectronic technology for a reconfigurable optical interconnection architecture, 0000 (16 June 1993); doi: 10.1117/12.146895
Proc. SPIE 1850, Progress and properties of high-power coherent vertical-cavity surface-emitting laser arrays, 0000 (16 June 1993); doi: 10.1117/12.146896
Proc. SPIE 1850, Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources, 0000 (16 June 1993); doi: 10.1117/12.146897
Proc. SPIE 1850, Vertical-cavity semiconductor lasers: structural characterization, CAD, and DFB structures, 0000 (16 June 1993); doi: 10.1117/12.146898
Proc. SPIE 1850, Resonant optical pumping of vertical-cavity semiconductor lasers, 0000 (16 June 1993); doi: 10.1117/12.146899
Quantum-Well Lasers
Proc. SPIE 1850, High-power InGaAs-GaAs 1064 nm strained-layer lasers by metalorganic chemical vapor deposition (MOCVD), 0000 (16 June 1993); doi: 10.1117/12.146900
Proc. SPIE 1850, TE/TM mode switching of GaAsP strained quantum-well laser diodes, 0000 (16 June 1993); doi: 10.1117/12.146901
Proc. SPIE 1850, Effect of strain on 1.5-um quantum-well lasers, 0000 (16 June 1993); doi: 10.1117/12.146902
Proc. SPIE 1850, Large-wavelength tunability of asymmetric three-section DFB lasers under cw and pulsed bias, 0000 (16 June 1993); doi: 10.1117/12.146903
Proc. SPIE 1850, Theoretical gain in strained-layer quantum wells, 0000 (16 June 1993); doi: 10.1117/12.146905
Semiconductor Laser Reliability
Proc. SPIE 1850, Reliability considerations of multi-quantum-well sources for optical fiber communication systems, 0000 (16 June 1993); doi: 10.1117/12.146906
Proc. SPIE 1850, Strained quaternary InAlGaAs 810-nm lasers, 0000 (16 June 1993); doi: 10.1117/12.146907
Proc. SPIE 1850, Are InAlGaAs strained-layer quantum-well lasers more reliable?, 0000 (16 June 1993); doi: 10.1117/12.146908
Proc. SPIE 1850, Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging, 0000 (16 June 1993); doi: 10.1117/12.146909
Proc. SPIE 1850, Step-stress and life testing of multiemitter bar lasers, 0000 (16 June 1993); doi: 10.1117/12.146910
Proc. SPIE 1850, Localization of crystallographic defects in failed laser diodes using optical probes, 0000 (16 June 1993); doi: 10.1117/12.146911
High-Power Semiconductor Lasers
Proc. SPIE 1850, Realization of high-power operation in AlGaInP lasers by employing multiquantum barrier and strained active layer, 0000 (16 June 1993); doi: 10.1117/12.146913
Proc. SPIE 1850, Phased 2D semiconductor laser array for high coherent output power, 0000 (16 June 1993); doi: 10.1117/12.146914
Proc. SPIE 1850, High-efficiency three-terminal laser array for optical interconnect, 0000 (16 June 1993); doi: 10.1117/12.146915
Surface-Emitting Lasers
Proc. SPIE 1850, Tunable DBR lasers for photonic random optical memory access (PROMAC), 0000 (16 June 1993); doi: 10.1117/12.146916
Proc. SPIE 1850, Modal reflectivity of horizontal cavity surface-emitting lasers, amplifiers, and SLEDs, 0000 (16 June 1993); doi: 10.1117/12.146917
Proc. SPIE 1850, Efficient, high-power monolithic two-dimensional surface-emitting diode laser arrays mounted in the junction-down configuration, 0000 (16 June 1993); doi: 10.1117/12.146918
Proc. SPIE 1850, High-power short-wavelength surface-emitting laser diodes, 0000 (16 June 1993); doi: 10.1117/12.146919
Proc. SPIE 1850, 1000-W QCW output power from surface-emitting GaAs/AlGaAs laser diode arrays, 0000 (16 June 1993); doi: 10.1117/12.146920
Laser Dynamics
Proc. SPIE 1850, Bandwidth reduction due to confinement factor modulation in quantum-well lasers, 0000 (16 June 1993); doi: 10.1117/12.146923
Proc. SPIE 1850, Resonant enhancement of semiconductor laser modulation response for efficient analog transmission at 35 GHz, 0000 (16 June 1993); doi: 10.1117/12.146924
Proc. SPIE 1850, Enhancement of the harmonic performance of a semiconductor optical amplifier using bias current feedback, 0000 (16 June 1993); doi: 10.1117/12.146925
Proc. SPIE 1850, Measurement of relative intensity noise of semiconductor laser arrays, 0000 (16 June 1993); doi: 10.1117/12.146926
Proc. SPIE 1850, Phase and amplitude modulations induced by four-wave mixing in laser diodes, 0000 (16 June 1993); doi: 10.1117/12.146927
Visible and Mid-Infrared Semiconductor Lasers
Proc. SPIE 1850, High-temperature operation of high-power InGaAlP visible laser diodes, 0000 (16 June 1993); doi: 10.1117/12.146928
Proc. SPIE 1850, Short-red-wavelength, high-power, AlGaInP laser diodes, 0000 (16 June 1993); doi: 10.1117/12.146930
Proc. SPIE 1850, Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2 um, 0000 (16 June 1993); doi: 10.1117/12.146931
Back to Top