PROCEEDINGS VOLUME 1851
OE/LASE'93: OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCEAND ENGINEERING | 17-22 JANUARY 1993
Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices
OE/LASE'93: OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCEAND ENGINEERING
17-22 January 1993
Los Angeles, CA, United States
Fabrication of Advanced Laser Structures
Proc. SPIE 1851, Buried heterostructure lasers based on InGaAsP/InP, 0000 (24 June 1993); doi: 10.1117/12.147587
Proc. SPIE 1851, Fabrication processes for GaAs-based high-power diode lasers, 0000 (24 June 1993); doi: 10.1117/12.147595
Proc. SPIE 1851, Fast and reliable processing of high-performance InGaAs 0.98-um laser diodes, 0000 (24 June 1993); doi: 10.1117/12.147597
Proc. SPIE 1851, 1.3-um InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents, 0000 (24 June 1993); doi: 10.1117/12.147598
Packaging Technologies I
Proc. SPIE 1851, Si-based laser subassembly for telecommunications, 0000 (24 June 1993); doi: 10.1117/12.147599
Proc. SPIE 1851, Inexpensive packaging techniques of fiber pigtailed laser diodes, 0000 (24 June 1993); doi: 10.1117/12.147600
Proc. SPIE 1851, High-performance packaging of gigabit data communication optical modules, 0000 (24 June 1993); doi: 10.1117/12.147601
Proc. SPIE 1851, Applications of diamond made by chemical vapor deposition semiconductor laser submounts, 0000 (24 June 1993); doi: 10.1117/12.147602
Packaging Technologies II
Proc. SPIE 1851, Packaging of optical interconnect arrays for optical signal processing and computing, 0000 (24 June 1993); doi: 10.1117/12.147588
Proc. SPIE 1851, Coupling four watts cw from a diode-pumped Nd:YAG laser through a 5-um-core single-mode fiber, 0000 (24 June 1993); doi: 10.1117/12.147589
Proc. SPIE 1851, Micro-optic and microelectronic integrated packaging of vertical-cavity lasers, 0000 (24 June 1993); doi: 10.1117/12.147590
Surface Emitters and Novel Processes
Proc. SPIE 1851, Vertical-cavity surface-emitting laser technology, 0000 (24 June 1993); doi: 10.1117/12.147591
Proc. SPIE 1851, Performance issues related to dielectric stack reflectors for vertical-cavity surface-emitting lasers, 0000 (24 June 1993); doi: 10.1117/12.147592
Proc. SPIE 1851, Molecular beam epitaxy technology for selective area embedded InGaAs layers in InP substrates, 0000 (24 June 1993); doi: 10.1117/12.147593
Poster Presentation
Proc. SPIE 1851, Direct contact-type image sensor unit, 0000 (24 June 1993); doi: 10.1117/12.147594
Packaging Technologies II
Proc. SPIE 1851, Laser diode fiber link for the transmitter of the SOUT program and for the beacon of the Silex program, 0000 (24 June 1993); doi: 10.1117/12.147596
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