PROCEEDINGS VOLUME 1856
OE/LASE'93: OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCEAND ENGINEERING | 17-22 JANUARY 1993
Laser Radiation Photophysics
OE/LASE'93: OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCEAND ENGINEERING
17-22 January 1993
Los Angeles, CA, United States
Mechanisms of Different Metal Deposition Techniques
Proc. SPIE 1856, Laser-induced transfer of precoated films, 0000 (24 June 1993); doi: 10.1117/12.147608
Proc. SPIE 1856, Mechanisms of local laser-induced front transfer of films, 0000 (24 June 1993); doi: 10.1117/12.147617
Proc. SPIE 1856, Excimer laser as a source for thin Cu film deposition for use in electronic device fabrication, 0000 (24 June 1993); doi: 10.1117/12.147624
Proc. SPIE 1856, Formation of microrelief on silicon surface under action of radiation pulses with different polarization, 0000 (24 June 1993); doi: 10.1117/12.147625
Deposition of Thin Films and SiO2 Etching
Proc. SPIE 1856, Continuous-wave Nd:YAG laser deposition of CdS thin films with cubic phase, 0000 (24 June 1993); doi: 10.1117/12.147627
Proc. SPIE 1856, Ultraviolet laser-induced single- and two-quantum photochemistry of oxygen-deficient centers in silica glasses, 0000 (24 June 1993); doi: 10.1117/12.147603
Dynamics of Pulsed Laser Ablation
Proc. SPIE 1856, Species-resolved laser-probing investigations of the hydrodynamics of KrF excimer and copper vapor laser ablation processing of materials, 0000 (24 June 1993); doi: 10.1117/12.147604
Proc. SPIE 1856, Influence of the velocity distribution of the particles on the laser deposition of the high-temperature superconducting thin films, 0000 (24 June 1993); doi: 10.1117/12.147605
Proc. SPIE 1856, Relaxation of gasdynamical processes after laser evaporation of condensed target, 0000 (24 June 1993); doi: 10.1117/12.147606
Proc. SPIE 1856, Dynamics of surface thermal expansion and diffusivity using two-color reflection transient gratings, 0000 (24 June 1993); doi: 10.1117/12.147607
Proc. SPIE 1856, Kinetics of laser-induced desorption from nonmetallic surfaces, 0000 (24 June 1993); doi: 10.1117/12.147609
Photon Interaction With Organic Materials
Proc. SPIE 1856, Mechanisms of excimer laser ablation of strongly absorbing systems, 0000 (24 June 1993); doi: 10.1117/12.147610
Proc. SPIE 1856, Excimer-laser-induced permanent electrical conductivity and nanostructures in polymers, 0000 (24 June 1993); doi: 10.1117/12.147611
Proc. SPIE 1856, Improving wire-bond quality on multichip modules through reduction of polyimide ablation debris, 0000 (24 June 1993); doi: 10.1117/12.147612
Proc. SPIE 1856, Triplet-triplet nonlinear absorption dynamics in C60, 0000 (24 June 1993); doi: 10.1117/12.147613
Proc. SPIE 1856, Divergence from normal reflection for 10.6-um laser on Ge-Cr-Au junction, 0000 (24 June 1993); doi: 10.1117/12.147614
Photophysics of Surfaces (ICONO 91)
Proc. SPIE 1856, Response of high-temperature superconductor to nanosecond laser-pulse action, 0000 (24 June 1993); doi: 10.1117/12.147615
Proc. SPIE 1856, Photostimulated processes on surface of metals and dielectric, 0000 (24 June 1993); doi: 10.1117/12.147616
Proc. SPIE 1856, Formation of reversible and irreversible structural defects on silicon surface under laser-pulsed influence, 0000 (24 June 1993); doi: 10.1117/12.147618
Proc. SPIE 1856, Laser-induced phase transitions in III-V compounds, 0000 (24 June 1993); doi: 10.1117/12.147619
Proc. SPIE 1856, Initial stages of crystallization of transitional metals oxides under laser-light influence, 0000 (24 June 1993); doi: 10.1117/12.147620
Proc. SPIE 1856, Investigation of evolution of microprofile on silicon surface under high-power laser-pulsed effect, 0000 (24 June 1993); doi: 10.1117/12.147621
Proc. SPIE 1856, Laser-induced semiconductor-metal phase transition and periodic structure formation on silicon surface, 0000 (24 June 1993); doi: 10.1117/12.147622
Proc. SPIE 1856, Physical mechanisms of light-induced polarization effects "on reflection" in GaAs, 0000 (24 June 1993); doi: 10.1117/12.147623
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