PROCEEDINGS VOLUME 1873
OE/LASE'93: OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCEAND ENGINEERING | 17-22 JANUARY 1993
Optically Activated Switching III
OE/LASE'93: OPTICS, ELECTRO-OPTICS, AND LASER APPLICATIONS IN SCIENCEAND ENGINEERING
17-22 January 1993
Los Angeles, CA, United States
Switch Characterization and Diagnostics I
Proc. SPIE 1873, Ion-implanted GaAs, 0000 (9 June 1993); doi: 10.1117/12.146536
Proc. SPIE 1873, Characterization of current filamentation in GaAs photoconductive switches, 0000 (9 June 1993); doi: 10.1117/12.146546
Proc. SPIE 1873, Development of current filaments in photoconductive GaAs switches, 0000 (9 June 1993); doi: 10.1117/12.146554
Proc. SPIE 1873, Long-lifetime silicon photoconductive semiconductor switches, 0000 (9 June 1993); doi: 10.1117/12.146560
Proc. SPIE 1873, Lifetime of BASS devices on 50-ohm video pulser circuits, 0000 (9 June 1993); doi: 10.1117/12.146561
Switch Characterization and Diagnostics II
Proc. SPIE 1873, GaAs PCSS: high-gain switching and device reliability, 0000 (9 June 1993); doi: 10.1117/12.146562
Proc. SPIE 1873, Novel curve-fitting technique for characterization of high-resistivity semiconductor materials, 0000 (9 June 1993); doi: 10.1117/12.146563
Proc. SPIE 1873, Breakdown of high-voltage silicon devices, 0000 (9 June 1993); doi: 10.1117/12.146564
Proc. SPIE 1873, New results on surface flashover in silicon-dielectric systems, 0000 (9 June 1993); doi: 10.1117/12.146565
Superconducting Switches and Fabrication
Proc. SPIE 1873, High-Tc superconductor opening switches for picosecond pulsed power system, 0000 (9 June 1993); doi: 10.1117/12.146537
Proc. SPIE 1873, Fast optically triggered superconducting opening switches, 0000 (9 June 1993); doi: 10.1117/12.146538
Proc. SPIE 1873, Influence of fabrication techniques on gallium arsenide switch photoconductivity, 0000 (9 June 1993); doi: 10.1117/12.146539
Proc. SPIE 1873, Nonalloyed contacts to p-type GaAs, 0000 (9 June 1993); doi: 10.1117/12.146540
Proc. SPIE 1873, Tailoring of transport dynamics by recombination center engineering of copper-compensated GaAs, 0000 (9 June 1993); doi: 10.1117/12.146541
Photoconductive Switch Modeling
Proc. SPIE 1873, Time-dependent model of optically activated GaAs switch, 0000 (9 June 1993); doi: 10.1117/12.146542
Proc. SPIE 1873, Streamer propagation model for high-gain photoconductive switching, 0000 (9 June 1993); doi: 10.1117/12.146543
Proc. SPIE 1873, Sudden breakdown of bulk semiconductor switches, 0000 (9 June 1993); doi: 10.1117/12.146544
Proc. SPIE 1873, Transmission-line modeling of photoconductive switches, 0000 (9 June 1993); doi: 10.1117/12.146545
Proc. SPIE 1873, Simple model of electromagnetic-wave-induced avalanching in semiconductors, 0000 (9 June 1993); doi: 10.1117/12.146547
Proc. SPIE 1873, General engineering model for linear and nonlinear photoconductive switches, 0000 (9 June 1993); doi: 10.1117/12.146548
Proc. SPIE 1873, Monte Carlo modeling of solid state photoswitches, 0000 (9 June 1993); doi: 10.1117/12.146549
Applications and Systems Considerations
Proc. SPIE 1873, Progress in UWB generation with linear silicon switches, 0000 (9 June 1993); doi: 10.1117/12.146550
Proc. SPIE 1873, Photoconductive switch control of optical devices, 0000 (9 June 1993); doi: 10.1117/12.146551
Proc. SPIE 1873, Nonlinear optical pulse compression for high-power GaAs photoconductive switching, 0000 (9 June 1993); doi: 10.1117/12.146552
Proc. SPIE 1873, Recent progress in photoconductive opening switch research at the University of Maryland, 0000 (9 June 1993); doi: 10.1117/12.146553
Switch Characterization and Diagnostics II
Proc. SPIE 1873, Investigation of the temperature and electric field dependence of a GaAs microwave photoconductive switch, 0000 (9 June 1993); doi: 10.1117/12.146555
Proc. SPIE 1873, Electron-beam-activated diamond switch experiments, 0000 (9 June 1993); doi: 10.1117/12.146556
Proc. SPIE 1873, Photoconductive measurements on P-type 6H-SiC, 0000 (9 June 1993); doi: 10.1117/12.146557
Proc. SPIE 1873, Thermal ionization model for the sustaining phase of lock-on in GaAs, 0000 (9 June 1993); doi: 10.1117/12.146558
Proc. SPIE 1873, Development of optically triggered semiconductor switches for the generation of high-power pulses, 0000 (9 June 1993); doi: 10.1117/12.146559
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