PROCEEDINGS VOLUME 1900
IS&T/SPIE'S SYMPOSIUM ON ELECTRONIC IMAGING: SCIENCE AND TECHNOLOGY | 31 JANUARY - 5 FEBRUARY 1993
Charge-Coupled Devices and Solid State Optical Sensors III
IN THIS VOLUME

0 Sessions, 27 Papers, 0 Presentations
IS&T/SPIE'S SYMPOSIUM ON ELECTRONIC IMAGING: SCIENCE AND TECHNOLOGY
31 January - 5 February 1993
San Jose, CA, United States
Imager Technologies
Proc. SPIE 1900, Active pixel sensors: are CCDs dinosaurs?, 0000 (12 July 1993); doi: 10.1117/12.148585
Proc. SPIE 1900, IR spectrometer using spectral pattern recognition: a feasibility study, 0000 (12 July 1993); doi: 10.1117/12.148594
Proc. SPIE 1900, Smart optical and image sensors fabricated with industrial CMOS/CCD semiconductor processes, 0000 (12 July 1993); doi: 10.1117/12.148605
Proc. SPIE 1900, Design of a low-light-level image sensor with on-chip sigma-delta analog-to-digital conversion, 0000 (12 July 1993); doi: 10.1117/12.148606
Proc. SPIE 1900, 640 x 400 pixels a-Si:H TFT-driven 2D image sensor, 0000 (12 July 1993); doi: 10.1117/12.148607
Proc. SPIE 1900, Performance of a high-speed PtSi IRCCD camera system, 0000 (12 July 1993); doi: 10.1117/12.148608
Proc. SPIE 1900, Modular CCD detector for x-ray crystallography, 0000 (12 July 1993); doi: 10.1117/12.148747
Device Design Issues and Models
Proc. SPIE 1900, Implications of a thinned CCD QE model, 0000 (12 July 1993); doi: 10.1117/12.148609
Proc. SPIE 1900, Issues in the design of systems incorporating electron bombarded CCDs, 0000 (12 July 1993); doi: 10.1117/12.148610
Proc. SPIE 1900, 16:9 aspect ratio for broadcast applications and its consequences for new CCD imagers, 0000 (12 July 1993); doi: 10.1117/12.148586
Proc. SPIE 1900, Model for random pixel clustering in large-format CCDs, 0000 (12 July 1993); doi: 10.1117/12.148587
Proc. SPIE 1900, Fast centroiding with a 24 x 24 frame transfer CCD, 0000 (12 July 1993); doi: 10.1117/12.148588
Applications and New Devices I
Proc. SPIE 1900, Performance of a large-format charge-injection device, 0000 (12 July 1993); doi: 10.1117/12.148589
Proc. SPIE 1900, Two-poly 128x128-element area array with lateral antiblooming, 0000 (12 July 1993); doi: 10.1117/12.148590
Proc. SPIE 1900, Electron bombardment radiation damage in Tektronix CCDs, 0000 (12 July 1993); doi: 10.1117/12.148591
Proc. SPIE 1900, Page-sized amorphous silicon image sensor arrays, 0000 (12 July 1993); doi: 10.1117/12.148592
Proc. SPIE 1900, Design and electro-optical characterization of a 1024 x 1024 imager, 0000 (12 July 1993); doi: 10.1117/12.148593
Applications and New Devices II
Proc. SPIE 1900, New low-noise, random access, radiation-resistant and large-format charge-injection device (CID) imagers, 0000 (12 July 1993); doi: 10.1117/12.148595
Proc. SPIE 1900, 26.2-million-pixel CCD image sensor, 0000 (12 July 1993); doi: 10.1117/12.148596
Proc. SPIE 1900, Large-pitch multiple-output 128x256-element area array, 0000 (12 July 1993); doi: 10.1117/12.148598
Proc. SPIE 1900, Electrolytic gate for quantum efficiency enhancement in thinned CCDs, 0000 (12 July 1993); doi: 10.1117/12.148599
Proc. SPIE 1900, Backside coatings for back illuminated CCDs, 0000 (12 July 1993); doi: 10.1117/12.148600
Proc. SPIE 1900, Stable ultraviolet antirelection coatings for charge-coupled devices, 0000 (12 July 1993); doi: 10.1117/12.148601
Proc. SPIE 1900, Thinned back-illuminated CCD for x-ray microscopy, 0000 (12 July 1993); doi: 10.1117/12.148602
Applications and New Devices I
Proc. SPIE 1900, 4-million-pixel CCD array for scientific applications, 0000 (12 July 1993); doi: 10.1117/12.148603
Device Design Issues and Models
Proc. SPIE 1900, Results from proton damage tests on the Michelson Doppler Imager CCD for SOHO, 0000 (12 July 1993); doi: 10.1117/12.148604
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