PROCEEDINGS VOLUME 1925
SPIE'S 1993 SYMPOSIUM ON MICROLITHOGRAPHY | 28-5 FEBRUARY 1993
Advances in Resist Technology and Processing X
SPIE'S 1993 SYMPOSIUM ON MICROLITHOGRAPHY
28-5 February 1993
San Jose, CA, United States
Mechanistic and Materials Aspects of Chemically Amplified Resists
Proc. SPIE 1925, Relationship between resist performance and diffusion in chemically amplified resist systems, 0000 (15 September 1993); doi: 10.1117/12.154742
Proc. SPIE 1925, Delay-time effects between exposure and post-exposure bake in acetal-based deep-UV photoresists, 0000 (15 September 1993); doi: 10.1117/12.154753
Proc. SPIE 1925, Study on the over-top-coating suppressing surface insoluble layer generation for chemical amplification resist, 0000 (15 September 1993); doi: 10.1117/12.154764
Proc. SPIE 1925, Influence of polymer properties on airborne chemical contamination of chemically amplified resists, 0000 (15 September 1993); doi: 10.1117/12.154774
Proc. SPIE 1925, JESSI Project E 162: status of the deep-UV resist, 0000 (15 September 1993); doi: 10.1117/12.154784
Proc. SPIE 1925, Molecular design for stabilization of chemical amplification resist toward airborne contamination, 0000 (15 September 1993); doi: 10.1117/12.154794
Proc. SPIE 1925, Delay-time stable chemically amplified deep-UV resist, 0000 (15 September 1993); doi: 10.1117/12.154803
Proc. SPIE 1925, Effect of using a resin coating on KrF chemically amplified positive resists, 0000 (15 September 1993); doi: 10.1117/12.154809
New Lithographic Materials and Methods
Proc. SPIE 1925, New three-component aqueous base developable negative-resist systems incorporating chemical amplification and tunable sensitivities, 0000 (15 September 1993); doi: 10.1117/12.154810
Proc. SPIE 1925, 1,3-dioxolyl acetals as powerful crosslinkers of phenolic resin, 0000 (15 September 1993); doi: 10.1117/12.154743
Proc. SPIE 1925, Negative DUV photoresist for 16Mb-DRAM production and future generations, 0000 (15 September 1993); doi: 10.1117/12.154744
Proc. SPIE 1925, Novel negative resists using thermally stable crosslinkers based on phenolic compounds, 0000 (15 September 1993); doi: 10.1117/12.154745
Proc. SPIE 1925, Plasma deposition, characterization, and photochemistry of organosilicon hydride network polymers: versatile resists for all-dry mid-deep UV photolithography, 0000 (15 September 1993); doi: 10.1117/12.154746
Proc. SPIE 1925, Chemical amplification positive deep-UV resist using partially tetrahydropyranyl-protected polyvinylphenol, 0000 (15 September 1993); doi: 10.1117/12.154747
Proc. SPIE 1925, Positive chemically amplified resist for deep-UV lithography, 0000 (15 September 1993); doi: 10.1117/12.154748
Proc. SPIE 1925, Acid-catalyzed single-layer resists for ArF lithography, 0000 (15 September 1993); doi: 10.1117/12.154749
Dissolution Inhibition Systems: Mechanistic/Chemical Aspects
Proc. SPIE 1925, Simulation of spray/puddle resist development, 0000 (15 September 1993); doi: 10.1117/12.154750
Proc. SPIE 1925, Characterization and simulation of acid-catalyzed DUV positive photoresist, 0000 (15 September 1993); doi: 10.1117/12.154751
Proc. SPIE 1925, Physical and chemical factors governing dissolution of novolak resin films, 0000 (15 September 1993); doi: 10.1117/12.154752
Proc. SPIE 1925, Host-guest effects in the interaction of developers with phenolic resins, 0000 (15 September 1993); doi: 10.1117/12.154754
Proc. SPIE 1925, Dissolution rate modeling of a chemically amplified positive resist, 0000 (15 September 1993); doi: 10.1117/12.154755
Proc. SPIE 1925, Design of PACs for high-performance photoresists (II): effect of number and orientation of DNQs and -OH of PACs on lithographic performances, 0000 (15 September 1993); doi: 10.1117/12.154756
Proc. SPIE 1925, Novel novolac resins produced from 2,6-bishydroxymethyl-p-cresol, p-cresol, and m-cresol: a method to more evenly distribute p-cresol units throughout a novolac resin, 0000 (15 September 1993); doi: 10.1117/12.154757
Proc. SPIE 1925, New chemistry in the design of chemically amplified positive resists, 0000 (15 September 1993); doi: 10.1117/12.154758
Top-Surface Imaging Systems
Proc. SPIE 1925, Role of surface tension in silylation processes, 0000 (15 September 1993); doi: 10.1117/12.154759
Proc. SPIE 1925, Processing techniques for improving performance of positive-tone silylation, 0000 (15 September 1993); doi: 10.1117/12.154760
Proc. SPIE 1925, Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography, 0000 (15 September 1993); doi: 10.1117/12.154761
Proc. SPIE 1925, Positive-tone dry-develop resist based on crosslinking a phenolic resin, 0000 (15 September 1993); doi: 10.1117/12.154762
Proc. SPIE 1925, Deep-UV positive-tone dry-development process using chemically amplified resist and its application to 256 Mbit DRAM, 0000 (15 September 1993); doi: 10.1117/12.154763
Proc. SPIE 1925, New simplified positive-tone DESIRE process using liquid phase silylation in DUV lithography, 0000 (15 September 1993); doi: 10.1117/12.154765
Poster Presentations
Proc. SPIE 1925, Advances in deep-UV processing using cluster tools, 0000 (15 September 1993); doi: 10.1117/12.154766
Proc. SPIE 1925, Prebake and post-exposure bake effects on the dissolution of AZ-PF, 0000 (15 September 1993); doi: 10.1117/12.154767
Proc. SPIE 1925, Track oriented chemically-amplified resist processes for quarter-micron lithography, 0000 (15 September 1993); doi: 10.1117/12.154768
Proc. SPIE 1925, Alpha-hydroxymethlbenzoin sulfonic acid esters--a versatile class of photoacid generating compounds for chemically amplified deep-UV photoresists, 0000 (15 September 1993); doi: 10.1117/12.154769
Proc. SPIE 1925, Resist materials design: base-catalyzed chemical amplification, 0000 (15 September 1993); doi: 10.1117/12.154770
Proc. SPIE 1925, Advanced i-line lithography: evaluation of a new chemical amplification negative resist, 0000 (15 September 1993); doi: 10.1117/12.154771
Proc. SPIE 1925, Evaluation of a deep-UV bilayer resist for sub-half micron lithography, 0000 (15 September 1993); doi: 10.1117/12.154772
Proc. SPIE 1925, Dissolution kinetics of chemically amplified resists, 0000 (15 September 1993); doi: 10.1117/12.154773
Proc. SPIE 1925, Evaluation of a new zirconium-containing, negative-working, single-layer resist with enhanced oxygen and fluorocarbon reactive-ion etch resistance, 0000 (15 September 1993); doi: 10.1117/12.154775
Proc. SPIE 1925, Evaluation of a 193-nm resist and imaging system, 0000 (15 September 1993); doi: 10.1117/12.154776
Proc. SPIE 1925, Evaluation of liquid silylated resists for 213-nm exposure, 0000 (15 September 1993); doi: 10.1117/12.154777
Proc. SPIE 1925, Electron beam hardening of photo resist, 0000 (15 September 1993); doi: 10.1117/12.154778
Proc. SPIE 1925, Study of trimethylsilyldiethylmine (TMSDEA) as a vapor priming agent, 0000 (15 September 1993); doi: 10.1117/12.154779
Proc. SPIE 1925, Effect of ultraviolet curing temperature on the state of stress and mechanical properties of photoresists, 0000 (15 September 1993); doi: 10.1117/12.154780
Proc. SPIE 1925, Comparison between equilibrium cooling and thermal shock, 0000 (15 September 1993); doi: 10.1117/12.154781
Proc. SPIE 1925, Experimental investigation of high-focus latitude concepts, 0000 (15 September 1993); doi: 10.1117/12.154782
Proc. SPIE 1925, Effects of fluorescence on the spatial resolution of photoresist materials, 0000 (15 September 1993); doi: 10.1117/12.154783
Proc. SPIE 1925, Hydrosiloxane-modified styrene-diene block copolymer resists, 0000 (15 September 1993); doi: 10.1117/12.154785
Proc. SPIE 1925, Model of the process of dissolution and swelling of thin polymethylmethacrylate films, 0000 (15 September 1993); doi: 10.1117/12.154786
Proc. SPIE 1925, Composition of inorganic photoresists and its EBE experiment, 0000 (15 September 1993); doi: 10.1117/12.154787
Proc. SPIE 1925, Effect of surface inhibition on process latitudes, 0000 (15 September 1993); doi: 10.1117/12.154788
Proc. SPIE 1925, Influence of residual casting solvent on the dissolution behavior of diazonaphthoquinone resists, 0000 (15 September 1993); doi: 10.1117/12.154789
Proc. SPIE 1925, Effects of absorptive dye loading and substrate reflectivity on a 0.5-micron i-line photoresists process, 0000 (15 September 1993); doi: 10.1117/12.154790
Proc. SPIE 1925, Understanding the novolak synthesis reaction, 0000 (15 September 1993); doi: 10.1117/12.154791
Proc. SPIE 1925, Scaling law for the dissolution of phenolic resins in aqueous base, 0000 (15 September 1993); doi: 10.1117/12.154792
Proc. SPIE 1925, Solvents in novolak synthesis, 0000 (15 September 1993); doi: 10.1117/12.154793
Proc. SPIE 1925, Blended novolac resins with improved lithographic performance, 0000 (15 September 1993); doi: 10.1117/12.154795