PROCEEDINGS VOLUME 1926
SPIE'S 1993 SYMPOSIUM ON MICROLITHOGRAPHY | 28-5 FEBRUARY 1993
Integrated Circuit Metrology, Inspection, and Process Control VII
SPIE'S 1993 SYMPOSIUM ON MICROLITHOGRAPHY
28-5 February 1993
San Jose, CA, United States
Modeling for Submicrometer Metrology
Proc. SPIE 1926, Images of dielectric film structures on reflecting substrates, 0000 (4 August 1993); doi: 10.1117/12.148944
Proc. SPIE 1926, Utilizing diffraction imaging for nondestructive wafer topography measurements, 0000 (4 August 1993); doi: 10.1117/12.148964
Optical Microscope Metrology
Proc. SPIE 1926, Comparisons of measured linewidths of submicrometer lines using optical, electrical, and SEM metrologies, 0000 (4 August 1993); doi: 10.1117/12.148980
Proc. SPIE 1926, Interferometric measurement of etch depths in phase-shift masks, 0000 (4 August 1993); doi: 10.1117/12.149001
Proc. SPIE 1926, Linewidth determination using simulated annealing, 0000 (4 August 1993); doi: 10.1117/12.149021
Proc. SPIE 1926, Using scattered light modeling for semiconductor critical dimension metrology and calibration, 0000 (4 August 1993); doi: 10.1117/12.149024
Lithographic Process Control/Process Monitoring I
Proc. SPIE 1926, Lithography process monitor using light diffracted from a latent image, 0000 (4 August 1993); doi: 10.1117/12.149025
Lithographic Process Control/Process Monitoring II
Proc. SPIE 1926, Cost of ownership for inspection equipment, 0000 (4 August 1993); doi: 10.1117/12.149028
Lithographic Process Control/Process Monitoring I
Proc. SPIE 1926, Improving ASM stepper alignment accuracy by alignment signal intensity simulation, 0000 (4 August 1993); doi: 10.1117/12.148933
Proc. SPIE 1926, Recent developments in stepper-focus and overlay-control metrology for subhalf-micron manufacturing applications, 0000 (4 August 1993); doi: 10.1117/12.148934
Proc. SPIE 1926, Advanced method for determining photoresist system capability, 0000 (4 August 1993); doi: 10.1117/12.148935
Lithographic Process Control/Process Monitoring II
Proc. SPIE 1926, Process optimization of APEX-E, 0000 (4 August 1993); doi: 10.1117/12.148936
Proc. SPIE 1926, Matching of multiple-wafer steppers for 0.35-um lithography using advanced optimization schemes, 0000 (4 August 1993); doi: 10.1117/12.148937
Proc. SPIE 1926, Positive DUV resist (APEX-E) by IBM for SVGL Micrascan, 0000 (4 August 1993); doi: 10.1117/12.148938
Proc. SPIE 1926, Characterization of metal film reflectivity for implementaton into manufacturing, 0000 (4 August 1993); doi: 10.1117/12.148939
Proc. SPIE 1926, Characterization of stepper chuck performance, 0000 (4 August 1993); doi: 10.1117/12.148940
Scanning Probe Metrology I
Proc. SPIE 1926, Report on the NIST low-accelerating-voltage SEM magnification standard interlaboratory study, 0000 (4 August 1993); doi: 10.1117/12.148941
Proc. SPIE 1926, Nonlinearity in scanning electron microscope critical dimension measurements introduced by the edge detection algorithm, 0000 (4 August 1993); doi: 10.1117/12.148943
Scanning Probe Metrology II
Proc. SPIE 1926, Characterization of atomic force microscopy and electrical probing techniques for IC metrology, 0000 (4 August 1993); doi: 10.1117/12.148946
Scanning Probe Metrology I
Proc. SPIE 1926, SEM inspection methods for process development and manufacturing of a 0.25-um T-gate GaAs MESFET fabrication, 0000 (4 August 1993); doi: 10.1117/12.148948
Scanning Probe Metrology II
Proc. SPIE 1926, Developments in 2D AFM metrology, 0000 (4 August 1993); doi: 10.1117/12.148949
Proc. SPIE 1926, New low-voltage SEM technology for imaging and metrology of submicrometer contact holes and other high-aspect-ratio structures, 0000 (4 August 1993); doi: 10.1117/12.148952
Proc. SPIE 1926, Observation of deep holes using new technique, 0000 (4 August 1993); doi: 10.1117/12.148954
Registration and Overlay Metrology I
Proc. SPIE 1926, Survey on pattern dimension measurement, 0000 (4 August 1993); doi: 10.1117/12.148956
Proc. SPIE 1926, Focus vernier for optical lithography, 0000 (4 August 1993); doi: 10.1117/12.148958
Proc. SPIE 1926, Evaluation of the error in automatic measurement of interlevel alignment, 0000 (4 August 1993); doi: 10.1117/12.148960
Proc. SPIE 1926, Frequency-domain subpixel position estimation algorithm for overlay measurement, 0000 (4 August 1993); doi: 10.1117/12.148962
Registration and Overlay Metrology II
Proc. SPIE 1926, Automatic feedback control to optimize stepper overlay, 0000 (4 August 1993); doi: 10.1117/12.148965
Proc. SPIE 1926, New methodology of optimizing optical overlay measurement, 0000 (4 August 1993); doi: 10.1117/12.148968
Proc. SPIE 1926, Mask overlay scaling error caused by exposure energy using a stepper, 0000 (4 August 1993); doi: 10.1117/12.148970
Proc. SPIE 1926, Minimizing overlay measurement errors, 0000 (4 August 1993); doi: 10.1117/12.148972
Thin Film Metrology
Proc. SPIE 1926, Measurement of phase-shift masks, 0000 (4 August 1993); doi: 10.1117/12.148974
Proc. SPIE 1926, Film thickness measurement of amorphous silicon, 0000 (4 August 1993); doi: 10.1117/12.148976
Proc. SPIE 1926, Lithographic effects of metal reflectivity variations, 0000 (4 August 1993); doi: 10.1117/12.148978
Particle and Defect Metrology
Proc. SPIE 1926, Digital image processing techniques for patterned-wafer inspection, 0000 (4 August 1993); doi: 10.1117/12.148982
Proc. SPIE 1926, FIB repair of 5x reticles and effects on IC quality, 0000 (4 August 1993); doi: 10.1117/12.148984
Proc. SPIE 1926, Obtaining process information from defect detection data to focus defect reduction programs in the fab environment, 0000 (4 August 1993); doi: 10.1117/12.148986
Proc. SPIE 1926, 40-nm-particle high-probability detection for bare wafer using side-scattered light, 0000 (4 August 1993); doi: 10.1117/12.148988
Proc. SPIE 1926, Printability of submicron 5x reticle defects at i-line and DUV exposure wavelengths, 0000 (4 August 1993); doi: 10.1117/12.148990
Thin Film Metrology
Proc. SPIE 1926, Study for measurement accuracy of the spectroscopic thin film thickness measurement system, 0000 (4 August 1993); doi: 10.1117/12.148992
Particle and Defect Metrology
Proc. SPIE 1926, Precise reticle defect classification and sizing based on double-tier inspection technique, 0000 (4 August 1993); doi: 10.1117/12.148993
Proc. SPIE 1926, Dual-sensor technology for high-speed detection of 0.1-um defects, 0000 (4 August 1993); doi: 10.1117/12.148996
Registration and Overlay Metrology I
Proc. SPIE 1926, Absolute pattern placement metrology on wafers, 0000 (4 August 1993); doi: 10.1117/12.148998
Scanning Probe Metrology I
Proc. SPIE 1926, Applications of an atomic force metrology system in semiconductor manufacturing, 0000 (4 August 1993); doi: 10.1117/12.149000
Particle and Defect Metrology
Proc. SPIE 1926, New feature extraction technique for detection of defects in microlithography patterns, 0000 (4 August 1993); doi: 10.1117/12.149004
Lithographic Process Control/Process Monitoring II
Proc. SPIE 1926, Understanding, quantifying, and reducing photospeed test error through technical partnerships and experimental design, 0000 (4 August 1993); doi: 10.1117/12.149005
Optical Microscope Metrology
Proc. SPIE 1926, Application-specific microscopy for half-micron metrology, 0000 (4 August 1993); doi: 10.1117/12.149008
Modeling for Submicrometer Metrology
Proc. SPIE 1926, Theoretical study and computer simulations of submicron linewidth measurement using optical phase-shifting interferometry, 0000 (4 August 1993); doi: 10.1117/12.149009
Lithographic Process Control/Process Monitoring I
Proc. SPIE 1926, Integrated circuit wafer reflectivity measurement in the UV and DUV and its application for ARC characterization, 0000 (4 August 1993); doi: 10.1117/12.149012
Optical Microscope Metrology
Proc. SPIE 1926, Aplanatic microlenses and applications in the semiconductor industry, 0000 (4 August 1993); doi: 10.1117/12.149014
Lithographic Process Control/Process Monitoring I
Proc. SPIE 1926, Corner-rounding study, 0000 (4 August 1993); doi: 10.1117/12.149016
Proc. SPIE 1926, Postexposure bake as a process-control parameter for chemically amplified photoresist, 0000 (4 August 1993); doi: 10.1117/12.149018
Scanning Probe Metrology I
Proc. SPIE 1926, Phase image metrology with a modified coherence probe microscope, 0000 (4 August 1993); doi: 10.1117/12.149020
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