PROCEEDINGS VOLUME 1985
PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS II | 23-28 MAY 1993
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS II
23-28 May 1993
Trieste, Italy
Plenary Session: Photonics
Proc. SPIE 1985, Fast optical addressing using plasma gratings stabilized by deep centers in semiconductors, 0000 (19 November 1993); doi: 10.1117/12.162767
Proc. SPIE 1985, Novel flat-panel display made of amorphous SiN:H/SiC:H thin-film LED, 0000 (19 November 1993); doi: 10.1117/12.162776
Proc. SPIE 1985, Fast semiconductor optical amplifier modulator design, 0000 (19 November 1993); doi: 10.1117/12.162785
Proc. SPIE 1985, Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation, 0000 (19 November 1993); doi: 10.1117/12.162795
Proc. SPIE 1985, Fast optical recording and photonic switching at room temperature using KCl:LiFA centers, 0000 (19 November 1993); doi: 10.1117/12.162802
Proc. SPIE 1985, Application of thin-film electroluminescent and photoconducting devices in an optoelectronic memory cell, 0000 (19 November 1993); doi: 10.1117/12.162731
New Materials: Si/Ge Growth
Proc. SPIE 1985, Optical properties of planar and selectively grown SiGe/Si multiple quantum wells, 0000 (19 November 1993); doi: 10.1117/12.162740
Proc. SPIE 1985, Investigation of strain relaxation in short-period SimGen superlattices using reciprocal space mapping, 0000 (19 November 1993); doi: 10.1117/12.162744
Proc. SPIE 1985, Time-resolved fluorescence investigation of SiC epitaxy layer, 0000 (19 November 1993); doi: 10.1117/12.162745
New Materials: Interface Engineering
Proc. SPIE 1985, Band offsets engineering at semiconductor heterojunctions, 0000 (19 November 1993); doi: 10.1117/12.162746
Proc. SPIE 1985, Modification of heterojunction band offsets at III-V/IV/III-V interfaces, 0000 (19 November 1993); doi: 10.1117/12.162747
Proc. SPIE 1985, In-situ structured MBE-grown crystals for applications in optoelectronics, 0000 (19 November 1993); doi: 10.1117/12.162748
Nonlinear Optics I
Proc. SPIE 1985, New class of coupled-quantum-well semiconductors with large electric field-tunable nonlinear susceptibilities in the infrared, 0000 (19 November 1993); doi: 10.1117/12.162749
Proc. SPIE 1985, Si-SiGe and GaAl-AlAs quantum-well structures for second harmonic generation, 0000 (19 November 1993); doi: 10.1117/12.162750
Proc. SPIE 1985, Second harmonic generation in ZnTe waveguides, 0000 (19 November 1993); doi: 10.1117/12.162751
Proc. SPIE 1985, Very large |x(2)(2w)| in the near infrared in AlSb/GaSb-InAsSb/AlSb asymmetric quantum wells, 0000 (19 November 1993); doi: 10.1117/12.162752
Nonlinear Optics II
Proc. SPIE 1985, Hot carrier model for highly nondegenerate four-wave-mixing in semiconductor laser devices, 0000 (19 November 1993); doi: 10.1117/12.162753
Proc. SPIE 1985, Optical bistability of p-i-n and n-i-p-i structures at very low optical power, 0000 (19 November 1993); doi: 10.1117/12.162754
Proc. SPIE 1985, Demonstration of low-power nonlinearity in InGaAs/InP multiple-quantum-well waveguides, 0000 (19 November 1993); doi: 10.1117/12.162755
Proc. SPIE 1985, Nonlinear optical phenomena and lasing in semiconductor quantum dots and wires, 0000 (19 November 1993); doi: 10.1117/12.162756
Plenary Session: Growth of New Materials
Proc. SPIE 1985, Growth and characterization of ultrathin InAs/GaAs quantum wells, 0000 (19 November 1993); doi: 10.1117/12.162757
Proc. SPIE 1985, Energy shift and band offset with elastic strain in InGaSb epilayers on GaSb(100) by metalorganic chemical vapor deposition, 0000 (19 November 1993); doi: 10.1117/12.162758
Proc. SPIE 1985, Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates, 0000 (19 November 1993); doi: 10.1117/12.162759
Proc. SPIE 1985, Tuning heterojunction band offsets by interface delta-doping, 0000 (19 November 1993); doi: 10.1117/12.162760
Proc. SPIE 1985, Influence of growth rate on the dopant confinement in delta-doped GaAs epitaxial layers grown by low-pressure metal organic vapor phase epitaxy, 0000 (19 November 1993); doi: 10.1117/12.162761
Plenary Session: Optical Device Characterization
Proc. SPIE 1985, Light emission from hot carriers in polar semiconductor devices, 0000 (19 November 1993); doi: 10.1117/12.162762
Proc. SPIE 1985, Hot-electron-induced light emission and impact ionization in GaAs-based devices, 0000 (19 November 1993); doi: 10.1117/12.162763
Proc. SPIE 1985, Defect characterization of GaAs/InP layers and MESFETs devices by admittance and photoluminescence spectroscopies, 0000 (19 November 1993); doi: 10.1117/12.162764
Proc. SPIE 1985, Nonequilibrium charge carriers recombination, diffusion peculiarities, and bleaching in InGaAs(P) epitaxial layers, 0000 (19 November 1993); doi: 10.1117/12.162765
Proc. SPIE 1985, Characterization of process-induced defects in 2.6-um InGaAs photodiodes, 0000 (19 November 1993); doi: 10.1117/12.162766
Proc. SPIE 1985, Errors in the determination by HREM of steps at AlAs/GaAs interfaces, 0000 (19 November 1993); doi: 10.1117/12.162768
Proc. SPIE 1985, Multiwavelength ellipsometry at strained Si1-xGex layers on Si substrate, 0000 (19 November 1993); doi: 10.1117/12.162769
Nonlinear Optics III
Proc. SPIE 1985, Scaling-law anomaly and band-structure-enhanced optical nonlinearities in semiconductor superlattices, 0000 (19 November 1993); doi: 10.1117/12.162770
Proc. SPIE 1985, Diacetylenes as nonlinear materials, 0000 (19 November 1993); doi: 10.1117/12.162771
Proc. SPIE 1985, Linear and nonlinear optics of asymmetric quantum wells, 0000 (19 November 1993); doi: 10.1117/12.162772
Proc. SPIE 1985, Electro-optical modulation in silicon-silicon/germanium quantum-well structures, 0000 (19 November 1993); doi: 10.1117/12.162773
Proc. SPIE 1985, Excitonic bistability of GaAs/Ga0.7Al0.3As ridged waveguides, 0000 (19 November 1993); doi: 10.1117/12.162774
Proc. SPIE 1985, Nonlinear optical interband transitions between electronic states in semiconductors in crossed-electric and magnetic fields, 0000 (19 November 1993); doi: 10.1117/12.162775
Optical Characterization of Materials
Proc. SPIE 1985, Characterization of InP/GaInAs superlattices by spectroscopic ellipsometry, 0000 (19 November 1993); doi: 10.1117/12.162777
Proc. SPIE 1985, Spectroscopic ellipsometry characterisatiion of strained Si1-xGex multi-quantum wells for optoelectronic applications, 0000 (19 November 1993); doi: 10.1117/12.162778
Proc. SPIE 1985, Vacuum electroreflectance, electrolyte electroreflectance, and photoreflectance study of highly doped GaAs, 0000 (19 November 1993); doi: 10.1117/12.162779
Proc. SPIE 1985, Characterization of main electron scattering mechanisms in InGaAs/InAlAs single quantum wells by optical modulation spectroscopy, 0000 (19 November 1993); doi: 10.1117/12.162780
Detectors
Proc. SPIE 1985, Carrier lifetimes in periodically delta-doped MQW structures, 0000 (19 November 1993); doi: 10.1117/12.162781
Proc. SPIE 1985, Improved photoresponse in nipi structures, 0000 (19 November 1993); doi: 10.1117/12.162782
Proc. SPIE 1985, Dark current mechanism and the cause of the current-voltage asymmetry in quantum-well intersubband photodetectors, 0000 (19 November 1993); doi: 10.1117/12.162783
Proc. SPIE 1985, IV-VI on fluoride/Si structures for IR-sensor-array applications, 0000 (19 November 1993); doi: 10.1117/12.162784
Proc. SPIE 1985, High-detectivity 8-12-um GaAs multi-quantum-well infrared photodetectors, 0000 (19 November 1993); doi: 10.1117/12.162786
Proc. SPIE 1985, Room-temperature high-sensitivity fast detector of FIR radiation, 0000 (19 November 1993); doi: 10.1117/12.162787
Proc. SPIE 1985, New fast point detector of FIR laser radiation, 0000 (19 November 1993); doi: 10.1117/12.162788
Proc. SPIE 1985, Characterization of electronic transport in amorphous silicon/crystalline silicon photodiodes, 0000 (19 November 1993); doi: 10.1117/12.162789
Proc. SPIE 1985, In-situ characterization of charge-carrier kinetics in multilayers during plasma growth and etching of amorphous silicon films, 0000 (19 November 1993); doi: 10.1117/12.162790
Proc. SPIE 1985, Two-dimensional photodetector with the light-controlled area of photosensitivity, 0000 (19 November 1993); doi: 10.1117/12.162791
Proc. SPIE 1985, Temperature and light-induced degradation effect on a-Si:H photovoltaic PIN device properties, 0000 (19 November 1993); doi: 10.1117/12.162792
Proc. SPIE 1985, Performances presented by a position-sensitive detector based on amorphous silicon technology, 0000 (19 November 1993); doi: 10.1117/12.162793
Si Luminescence
Proc. SPIE 1985, Porous silicon and its application for light emitting diodes, 0000 (19 November 1993); doi: 10.1117/12.162794
Proc. SPIE 1985, Photoluminescence of porous silicon by pulse exitation, 0000 (19 November 1993); doi: 10.1117/12.162796
Plenary Session: Optical Properties I
Proc. SPIE 1985, Lifetime of excitons in GaAs quantum wells, 0000 (19 November 1993); doi: 10.1117/12.162797
Proc. SPIE 1985, Exciton modes in quantum barriers, 0000 (19 November 1993); doi: 10.1117/12.162798