PROCEEDINGS VOLUME 2139
OE/LASE '94 | 23-29 JANUARY 1994
Quantum Well and Superlattice Physics V
IN THIS VOLUME

0 Sessions, 37 Papers, 0 Presentations
Tunneling  (5)
OE/LASE '94
23-29 January 1994
Los Angeles, CA, United States
Spectroscopy of Quantum Structures
Proc. SPIE 2139, Observation of the Mahan exciton using electroreflectance spectroscopy of a quantum well structure, 0000 (11 May 1994); doi: 10.1117/12.175697
Proc. SPIE 2139, Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures, 0000 (11 May 1994); doi: 10.1117/12.175706
Proc. SPIE 2139, Photoluminescence linewidth broadening due to bound exciton interaction, 0000 (11 May 1994); doi: 10.1117/12.175716
Proc. SPIE 2139, Normal-incidence intersubband hole absorption in In0.5Ga0.5As/Al0.45Ga0.55As quantum wells, 0000 (11 May 1994); doi: 10.1117/12.175725
Proc. SPIE 2139, Study of the mechanism of the heavy- and light-hole mixing in GaAs/AlAs superlattices by the exciton magnetoluminescence, 0000 (11 May 1994); doi: 10.1117/12.175729
Proc. SPIE 2139, Magnetoluminescence and Raman study of GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barrier layers, 0000 (11 May 1994); doi: 10.1117/12.175730
Proc. SPIE 2139, Effect of AlAs mole fraction on the integrated luminescence intensity of GaAs/AlxGa1-xAs quantum well heterostructures, 0000 (11 May 1994); doi: 10.1117/12.175731
Proc. SPIE 2139, Exciton dynamics in GaAs/GaAlAs, InGaAs/GaAs, and InGaAs/AlGaAs quantum wells, 0000 (11 May 1994); doi: 10.1117/12.175732
Device Physics
Proc. SPIE 2139, Quantum well intermixing for optoelectronic integration, 0000 (11 May 1994); doi: 10.1117/12.175733
Proc. SPIE 2139, Optical modulation and bistability using bulk Franz-Keldysh effect in GaAlAs-GaAsAg asymmetric Fabry-Perot device structures, 0000 (11 May 1994); doi: 10.1117/12.175698
Proc. SPIE 2139, Measurement and simulation of photoluminescence spectra from vertical-cavity quantum-well laser structures, 0000 (11 May 1994); doi: 10.1117/12.175699
Proc. SPIE 2139, Quantum well structures with almost-degenerate valence bands, 0000 (11 May 1994); doi: 10.1117/12.175700
Proc. SPIE 2139, Demonstration of extremely low switching energies using new n-i-p-i-based smart pixels, 0000 (11 May 1994); doi: 10.1117/12.175701
Proc. SPIE 2139, Enhanced quantum well intermixing using multiple ion implantation, 0000 (11 May 1994); doi: 10.1117/12.175702
Proc. SPIE 2139, Performance of multiple quantum well edge-emitting LED, 0000 (11 May 1994); doi: 10.1117/12.175703
Proc. SPIE 2139, InGaAs strained-layer single-quantum-well lasers' spontaneous emission spectra and their features, 0000 (11 May 1994); doi: 10.1117/12.175704
Proc. SPIE 2139, New type of dynamic quantum wells and quantum dots, 0000 (11 May 1994); doi: 10.1117/12.175705
Nonlinear Effects
Proc. SPIE 2139, Longitudinal and vertical emission laser integration with quasi-phase-matched harmonic layers, 0000 (11 May 1994); doi: 10.1117/12.175707
Proc. SPIE 2139, Optical transitions and nonlinearities in amorphous Si/SiO2 quantum structures, 0000 (11 May 1994); doi: 10.1117/12.175708
Proc. SPIE 2139, Second harmonic generation in p-type GaAs quantum wells, 0000 (11 May 1994); doi: 10.1117/12.175709
Proc. SPIE 2139, Free-electron laser nonlinear spectroscopy of doubly resonant (5.5-3.0um and 4.1-2.1 um)InGaAs/AlGaAs asymmetric quantum wells, 0000 (11 May 1994); doi: 10.1117/12.175710
Proc. SPIE 2139, Nonlocal study of optical second harmonic generation from a GaAs/AlGaAs quantum well subjected to a DC electric field, 0000 (11 May 1994); doi: 10.1117/12.175711
Proc. SPIE 2139, Classically, the strangest of things, when quantum dots are quantum rings, 0000 (11 May 1994); doi: 10.1117/12.175712
Proc. SPIE 2139, Nonlinear characteristics of plasma in 2-D QW structures at superhigh excitation, 0000 (11 May 1994); doi: 10.1117/12.175713
Quantum Well Wires and Dots
Proc. SPIE 2139, Stimulated emission in quantum wires fabricated by cleaved edge overgrowth, 0000 (11 May 1994); doi: 10.1117/12.175714
Proc. SPIE 2139, Time-resolved studies of spatially direct and indirect transitions in GaAs/AlGaAs and InGaAs/GaAs quantum wires, 0000 (11 May 1994); doi: 10.1117/12.175715
Proc. SPIE 2139, Picosecond time-resolved investigations of carrier lifetime and carrier capture in InGaAs/GaAs quantum dots, 0000 (11 May 1994); doi: 10.1117/12.175717
Proc. SPIE 2139, Lateral localization effects in strained InGaAs/GaAs semiconductor quantum wells grown on vicinal surfaces, 0000 (11 May 1994); doi: 10.1117/12.175718
Proc. SPIE 2139, Room-temperature photoreflectance characterization of process-induced strains in GaAs/Ga0.7Al0.3As quantum dots, 0000 (11 May 1994); doi: 10.1117/12.175719
Proc. SPIE 2139, Mechanism of the carrier recombination in semiconductor dots, 0000 (11 May 1994); doi: 10.1117/12.175720
Tunneling
Proc. SPIE 2139, Bipolar charge transport in triple-barrier AlAs/GaAs resonant tunneling light-emitting diodes, 0000 (11 May 1994); doi: 10.1117/12.175721
Proc. SPIE 2139, Effects of charge accumulation and biasing on resonant tunneling energies and tunneling dynamics, 0000 (11 May 1994); doi: 10.1117/12.175722
Proc. SPIE 2139, Regular and periodic peaks in device current, capacitance, and intersubband photocurrent from a multiple double-well structure, 0000 (11 May 1994); doi: 10.1117/12.175723
Proc. SPIE 2139, Luminescence kinetics and lifetime of excitons in quantum wells with interface roughness, 0000 (11 May 1994); doi: 10.1117/12.175724
Proc. SPIE 2139, Possibility of energy spectrum control of tunneling-coupled quantum wells by means of temperature, 0000 (11 May 1994); doi: 10.1117/12.175726
Non-III-V Quantum Structures
Proc. SPIE 2139, Light emission from ordered group-IV materials: concepts and prospects, 0000 (11 May 1994); doi: 10.1117/12.175727
Proc. SPIE 2139, Absorption and emission characteristics of mesa and ridge waveguide diodes made from strain adjusted SImGEn superlattice and SI/GE quantum well layers grown by MBE, 0000 (11 May 1994); doi: 10.1117/12.175728
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