PROCEEDINGS VOLUME 2140
OE/LASE '94 | 23-29 JANUARY 1994
Epitaxial Growth Processes
OE/LASE '94
23-29 January 1994
Los Angeles, CA, United States
Growth Mechanisms
Proc. SPIE 2140, Scanning tunneling microscopy and angle of mounds study of gallium arsenide grown by molecular beam epitaxy, 0000 (11 May 1994); doi: 10.1117/12.175784
Proc. SPIE 2140, Diffraction condition dependence of reflection high-energy electron diffraction (RHEED) dampening during molecular-beam epitaxy (MBE)growth, 0000 (11 May 1994); doi: 10.1117/12.175791
Proc. SPIE 2140, Pyrolysis of novel and safe phosphorous sources for chemical beam epitaxy applications, 0000 (11 May 1994); doi: 10.1117/12.175792
Proc. SPIE 2140, Thin film growth effects related to the propensity for clustering, 0000 (11 May 1994); doi: 10.1117/12.175793
Proc. SPIE 2140, Stress-promoted surface kinetics as a precursor of islanding, 0000 (11 May 1994); doi: 10.1117/12.175794
Growth and Properties of Artificially Structured Materials I
Proc. SPIE 2140, Selective area growth of III-V semiconductors by chemical beam epitaxy: study of reaction mechanisms, 0000 (11 May 1994); doi: 10.1117/12.175795
Proc. SPIE 2140, Growth and characterization of spontaneously-ordered AlInAs and GaInAs on InP, 0000 (11 May 1994); doi: 10.1117/12.175777
Proc. SPIE 2140, Low-pressure metallorganic vapor phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates, 0000 (11 May 1994); doi: 10.1117/12.175778
Magnetic Materials and II-VI Compounds
Proc. SPIE 2140, Magneto-optical spectroscopy as a structure- and chemical-order sensitive probe, 0000 (11 May 1994); doi: 10.1117/12.175779
Proc. SPIE 2140, Re-emitted positron spectroscopy as a structural probe of metal overlayer systems: Pd/Cu(100), 0000 (11 May 1994); doi: 10.1117/12.175780
Proc. SPIE 2140, Molecular-Beam Epitaxy (MBE) growth of chemically ordered Co-Pt and Fe-Pt alloy phases, 0000 (11 May 1994); doi: 10.1117/12.175781
Proc. SPIE 2140, Structure and magnetic properties of Fe overlayers on Al(100), 0000 (11 May 1994); doi: 10.1117/12.175782
Proc. SPIE 2140, Interfacial contributions to magnetic thin film anisotropy arising from epitaxial growth processes in metal/semiconductor structures, 0000 (11 May 1994); doi: 10.1117/12.175783
Proc. SPIE 2140, Epitaxial growth of quaternary (Zn,Mg)(S,Se) for pseudomorphic separate confinement heterostructure (SCH) laser structures, 0000 (11 May 1994); doi: 10.1117/12.175785
Proc. SPIE 2140, Metallorganic vapor phase epitaxy growth of ZnSe1-xTex on (111) and (001) GaAs substrates, 0000 (11 May 1994); doi: 10.1117/12.175786
Growth and Properties of Artificially Structured Materials II
Proc. SPIE 2140, InAsP/InP strained quantum wells grown by gas-source molecular beam epitaxy on InP(100) and (111)B substrates, 0000 (11 May 1994); doi: 10.1117/12.175787
Proc. SPIE 2140, Piezoactive (110)- and (h11)-InAs/GaAs heterostructures for nonlinear optical applications, 0000 (11 May 1994); doi: 10.1117/12.175788
Proc. SPIE 2140, Analysis of growth parameters and strain in GaInSb/InAs superlattices, 0000 (11 May 1994); doi: 10.1117/12.175789
Proc. SPIE 2140, Control of surface morphology and strain relaxation in InGaAs grown on GaAs using a step-graded buffer, 0000 (11 May 1994); doi: 10.1117/12.175790
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