PROCEEDINGS VOLUME 2141
OE/LASE '94 | 23-29 JANUARY 1994
Spectroscopic Characterization Techniques for Semiconductor Technology V
OE/LASE '94
23-29 January 1994
Los Angeles, CA, United States
Quantum Well Materials and Structures
Proc. SPIE 2141, Optical processes in quantum dots and wires, 0000 (26 May 1994); doi: 10.1117/12.176842
Proc. SPIE 2141, Interface disorder effects on confined phonons in semiconductor microstructures, 0000 (26 May 1994); doi: 10.1117/12.176856
Proc. SPIE 2141, Optical determination of (partial) ordering in ordered alloys, 0000 (26 May 1994); doi: 10.1117/12.176857
Proc. SPIE 2141, Effects of P4 annealing on ordered Ga0.52In0.48P, 0000 (26 May 1994); doi: 10.1117/12.176858
Semiconductor Device Characterization I
Proc. SPIE 2141, Characterization of semiconductor device structures by modulation spectroscopy, 0000 (26 May 1994); doi: 10.1117/12.176859
Proc. SPIE 2141, Characterization by line-shape analysis of photoreflectance spectra for modulation-doped strained quantum wells, 0000 (26 May 1994); doi: 10.1117/12.176860
Proc. SPIE 2141, Investigation of doped multiple quantum well structures using modulation spectroscopy, 0000 (26 May 1994); doi: 10.1117/12.176861
Proc. SPIE 2141, Measurement of ion-induced damage profiles in GaAs using modulation spectroscopy, 0000 (26 May 1994); doi: 10.1117/12.176910
Proc. SPIE 2141, Photoreflectance study of the chemically modified (100) GaAs surface, 0000 (26 May 1994); doi: 10.1117/12.176843
Proc. SPIE 2141, Electronic optical properties of the condensed medium, 0000 (26 May 1994); doi: 10.1117/12.176844
Epitaxial Growth Characterization
Proc. SPIE 2141, Reflection high-energy electron diffraction studies of epitaxial growth on corrugated semiconductor surfaces, 0000 (26 May 1994); doi: 10.1117/12.176845
Proc. SPIE 2141, Use of optical characterization for optimization of epitaxial growth, 0000 (26 May 1994); doi: 10.1117/12.176846
Proc. SPIE 2141, Characterization of very thin MBE-grown Ge epilayers on (001) Si, 0000 (26 May 1994); doi: 10.1117/12.176847
Proc. SPIE 2141, Light emission properties of porous Si, 0000 (26 May 1994); doi: 10.1117/12.176848
Proc. SPIE 2141, Optical characterization of light-emitting porous silicon, 0000 (26 May 1994); doi: 10.1117/12.176849
Semiconductor Device Characterization II
Proc. SPIE 2141, Nonlinear optical phenomena in semiconductor lasers and amplifiers: physics and applications, 0000 (26 May 1994); doi: 10.1117/12.176850
Proc. SPIE 2141, Correlation of optical, x-ray, and electron microscopy measurements on semiconductor multilayer structures, 0000 (26 May 1994); doi: 10.1117/12.176851
Proc. SPIE 2141, Electroreflectance line-shape analysis for coupled GaAs-AlAs superlattices in strong electric fields, 0000 (26 May 1994); doi: 10.1117/12.176852
Proc. SPIE 2141, Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain, 0000 (26 May 1994); doi: 10.1117/12.176853
Proc. SPIE 2141, Spectroscopic ellipsometry of undulated, bonded silicon-on-insulator structures with oxide-nitride-oxide layers, 0000 (26 May 1994); doi: 10.1117/12.176854
Quantum Well Materials and Structures
Proc. SPIE 2141, Lateral confinement effects in the luminescence of ultranarrow InGaAs/InP quantum wires, 0000 (26 May 1994); doi: 10.1117/12.176855
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