PROCEEDINGS VOLUME 2148
OE/LASE '94 | 23-29 JANUARY 1994
Laser Diode Technology and Applications VI
OE/LASE '94
23-29 January 1994
Los Angeles, CA, United States
High-Power Laser Diodes I
Proc. SPIE 2148, High-power, high-duty-cycle operation of monolithic two-dimensional surface-emitting diode laser arrays in the junction-down configuration, 0000 (1 June 1994); doi: 10.1117/12.176600
Proc. SPIE 2148, Improved performance of high-average-power semiconductor arrays for applications in diode-pumped solid state lasers, 0000 (1 June 1994); doi: 10.1117/12.176608
Proc. SPIE 2148, Ultrahigh-average-brightness semiconductor laser arrays, 0000 (1 June 1994); doi: 10.1117/12.176617
Proc. SPIE 2148, Single-stripe high-power 2-W cw visible laser diodes, 0000 (1 June 1994); doi: 10.1117/12.176624
Proc. SPIE 2148, Spatial-filtered expanded-window lasers for high-power operation of single-stripe lasers, 0000 (1 June 1994); doi: 10.1117/12.176632
Proc. SPIE 2148, Design of high-power ridge waveguide 980-nm pump lasers, 0000 (1 June 1994); doi: 10.1117/12.176643
Proc. SPIE 2148, Mode composition control in high-power buried InGaAsP/GaAs lasers, 0000 (1 June 1994); doi: 10.1117/12.176646
High-Power Laser Diodes II
Proc. SPIE 2148, Phase locking of a two-dimensional semiconductor laser array in an external Talbot cavity, 0000 (1 June 1994); doi: 10.1117/12.176647
Proc. SPIE 2148, Two-dimensional scaling of ridge waveguide amplifiers, 0000 (1 June 1994); doi: 10.1117/12.176648
High-Power Laser Diodes III
Proc. SPIE 2148, 300-mW diffraction-limited beam from flat-phase-front antiguided master oscillator power amplifier, 0000 (1 June 1994); doi: 10.1117/12.176601
Proc. SPIE 2148, 1.3-W cw diffraction-limited monolithically integrated master oscillator flared amplifier at 860 nm, 0000 (1 June 1994); doi: 10.1117/12.176602
Proc. SPIE 2148, Recent progress with tapered-gain-region devices, 0000 (1 June 1994); doi: 10.1117/12.176603
Proc. SPIE 2148, Monolithic integration of a semiconductor preamplifier with a semiconductor tapered power amplifier, 0000 (1 June 1994); doi: 10.1117/12.176604
Reliability
Proc. SPIE 2148, Quantitative spectral analysis in semiconductor laser reliability, 0000 (1 June 1994); doi: 10.1117/12.176605
Proc. SPIE 2148, Reliable single-mode diode lasers at 200 mW, 0000 (1 June 1994); doi: 10.1117/12.176606
Proc. SPIE 2148, High-power and highly reliable operation of all-MOCVD-grown 1.48-um diode lasers, 0000 (1 June 1994); doi: 10.1117/12.176607
Proc. SPIE 2148, Study of correlation between optical characteristics and mirror facet temperature of the active region in high-power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes, 0000 (1 June 1994); doi: 10.1117/12.176609
Quantum Well Lasers
Proc. SPIE 2148, Advances in quantum well heterostructure lasers: strained-layer buried heterostructure lasers by selective-area epitaxy, 0000 (1 June 1994); doi: 10.1117/12.176610
Proc. SPIE 2148, Low-temperature operating characteristics of 2.0-um strained InGaAs lasers, 0000 (1 June 1994); doi: 10.1117/12.176611
Proc. SPIE 2148, Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition, 0000 (1 June 1994); doi: 10.1117/12.176612
Proc. SPIE 2148, Compressively strained 1.55-um InxGa1-xAsyP1-y/InP quantum well laser diodes grown by MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP), 0000 (1 June 1994); doi: 10.1117/12.176613
Proc. SPIE 2148, Optimization of 670-nm strained quantum well laser diodes, 0000 (1 June 1994); doi: 10.1117/12.176614
Semiconductor Laser Dynamics
Proc. SPIE 2148, Interface techniques for gigahertz/gigabit lasers, 0000 (1 June 1994); doi: 10.1117/12.176615
Proc. SPIE 2148, Gigabit fiber optic links using compact disc lasers, 0000 (1 June 1994); doi: 10.1117/12.176616
Proc. SPIE 2148, Lasers for large modulation bandwidth and low-threshold applications, 0000 (1 June 1994); doi: 10.1117/12.176618
Proc. SPIE 2148, Dynamic characteristics of 1.55-um strained MQW-DFB lasers: improvement of high-speed performance by gain-coupling effects, 0000 (1 June 1994); doi: 10.1117/12.176619
Proc. SPIE 2148, External feedback sensitivity of 1.55-um gain-coupled multiquantum well DFB lasers, 0000 (1 June 1994); doi: 10.1117/12.176620
Poster Presentations
Proc. SPIE 2148, Bessel function and perturbation analyses of the FM and IM behavior of a directly modulated semiconductor laser, 0000 (1 June 1994); doi: 10.1117/12.176621
Emerging Applications
Proc. SPIE 2148, Medical applications of medium- to high-power diode lasers, 0000 (1 June 1994); doi: 10.1117/12.176622
Proc. SPIE 2148, Effect of semiconductor laser characteristics on optical fiber sensor performance, 0000 (1 June 1994); doi: 10.1117/12.176623
Proc. SPIE 2148, Photonics technology for avionic systems, 0000 (1 June 1994); doi: 10.1117/12.176625
Proc. SPIE 2148, Near-infrared InGaAs/InP distributed-feedback lasers for spectroscopic applications, 0000 (1 June 1994); doi: 10.1117/12.176626
Untitled
Proc. SPIE 2148, Refractory contact lasers, 0000 (1 June 1994); doi: 10.1117/12.176627
Proc. SPIE 2148, Effect of zinc diffusion on the device performance of semi-insulating buried crescent lasers, 0000 (1 June 1994); doi: 10.1117/12.176628
Proc. SPIE 2148, Compact robust fiber-optic-coupled diode laser array module for solid state laser pumping and beacon applications, 0000 (1 June 1994); doi: 10.1117/12.176629
Proc. SPIE 2148, Simple thermal management of long-pulse large multibar laser diode arrays, 0000 (1 June 1994); doi: 10.1117/12.176630
Proc. SPIE 2148, Microchannel coolers for high-power laser diodes in copper technology, 0000 (1 June 1994); doi: 10.1117/12.176631
Standards and Procedures
Proc. SPIE 2148, Progress in standards for laser reliability testing, 0000 (1 June 1994); doi: 10.1117/12.176633
Proc. SPIE 2148, Optoelectronic devices: standards activities in Europe: a case study, 0000 (1 June 1994); doi: 10.1117/12.176634
Proc. SPIE 2148, Strategy for reliability qualification of nonhermetic laser modules, 0000 (1 June 1994); doi: 10.1117/12.176635
Proc. SPIE 2148, Characterization testing of monolithic dual-beam visible diode lasers with a 50-um channel separation, 0000 (1 June 1994); doi: 10.1117/12.176636
Testing Techniques
Proc. SPIE 2148, Novel optical techniques for characterization of advanced semiconductor lasers for telecommunications, 0000 (1 June 1994); doi: 10.1117/12.176637
Proc. SPIE 2148, Simple and effective method for characterizing dynamic properties of distributed feedback lasers at the chip level, 0000 (1 June 1994); doi: 10.1117/12.176638
Proc. SPIE 2148, Current fluctuations in laser diodes, 0000 (1 June 1994); doi: 10.1117/12.176639
Proc. SPIE 2148, Oscillation wavelength shifts of diode lasers in a magnetic field, 0000 (1 June 1994); doi: 10.1117/12.176640
Proc. SPIE 2148, Characterization of strained quantum well InGaAs/AlGaAs buried heterostructure lasers using internal second-harmonic generation, 0000 (1 June 1994); doi: 10.1117/12.176641
Laser Characterization and Test Equipment
Proc. SPIE 2148, Wafer scale testing of vertical cavity surface-emitting laser arrays, 0000 (1 June 1994); doi: 10.1117/12.176642
Proc. SPIE 2148, Parallel processing multitemperature robotic tester and burn-in oven for InGaAsP lasers, 0000 (1 June 1994); doi: 10.1117/12.176644
Untitled
Proc. SPIE 2148, Single epitaxial structure for the integration of lasers with heterojunction bipolar transistors, 0000 (1 June 1994); doi: 10.1117/12.176645
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