PROCEEDINGS VOLUME 2150
OE/LASE '94 | 23-29 JANUARY 1994
Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits
OE/LASE '94
23-29 January 1994
Los Angeles, CA, United States
Semiconductor Devices and Circuits I
Proc. SPIE 2150, Semiconductor ring lasers, 0000 (2 May 1994); doi: 10.1117/12.174976
Proc. SPIE 2150, Effects of carrier diffusion in the design and measurement of waveguide couplers and etched facets for a semiconductor-integrated optical routing array, 0000 (2 May 1994); doi: 10.1117/12.174996
Proc. SPIE 2150, Design of Al-free and Al-based InGaAs/GaAs strained quantum well 980-nm pump lasers including thermal behavior effects on E/O characteristics, 0000 (2 May 1994); doi: 10.1117/12.175004
Semiconductor Devices and Circuits II
Proc. SPIE 2150, Polarization control photonic functional devices with quantum well structures, 0000 (2 May 1994); doi: 10.1117/12.175012
Proc. SPIE 2150, Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation, 0000 (2 May 1994); doi: 10.1117/12.175013
Proc. SPIE 2150, Model of an inhomogeneously pumped semiconductor optical amplifier operating to produce wavelength conversion from 1.3um-1.5um, 0000 (2 May 1994); doi: 10.1117/12.175014
Proc. SPIE 2150, Investigation of porous silicon by Raman scattering and second-harmonic generation techniques, 0000 (2 May 1994); doi: 10.1117/12.175015
Proc. SPIE 2150, Relaxation mechanisms of electronic excitation in nanostructures of porous silicon, 0000 (2 May 1994); doi: 10.1117/12.174977
Semiconductor Devices and Circuits III
Proc. SPIE 2150, Novel concepts in photonic waveguide devices based on quantum well structures, 0000 (2 May 1994); doi: 10.1117/12.174978
Proc. SPIE 2150, Lasing characteristics of tunable four-section distributed-Bragg reflector lasers, 0000 (2 May 1994); doi: 10.1117/12.174979
Proc. SPIE 2150, Electroluminescence from novel porous silicon p-n junction devices, 0000 (2 May 1994); doi: 10.1117/12.174980
Modeling of Guided-Wave Devices
Proc. SPIE 2150, Bidirectional beam propagation modeling of photonic structures based on mode expansion and matching, 0000 (2 May 1994); doi: 10.1117/12.174981
Proc. SPIE 2150, Modeling of nonlinear effects in GaInAsP electroabsorption modulators, 0000 (2 May 1994); doi: 10.1117/12.174982
Proc. SPIE 2150, Integration of the finite-difference-time-domain and mode-propagation-by-Fourier-expansion methods for guided-wave device simulation, 0000 (2 May 1994); doi: 10.1117/12.174983
Proc. SPIE 2150, BPM simulator for active and passive semiconductor IOC, 0000 (2 May 1994); doi: 10.1117/12.174984
Proc. SPIE 2150, Modeling of planar multifrequency acousto-optic interaction, 0000 (2 May 1994); doi: 10.1117/12.174985
Integrated Optical Devices I
Proc. SPIE 2150, Three-wavelength Mach-Zehnder demultiplexer, 0000 (2 May 1994); doi: 10.1117/12.174986
Proc. SPIE 2150, Design and simulation of optical switches on nonlinear glasses, 0000 (2 May 1994); doi: 10.1117/12.174987
Proc. SPIE 2150, Design of nonreciprocal couplers for integrated optics, 0000 (2 May 1994); doi: 10.1117/12.174988
Proc. SPIE 2150, Lithium niobate electrically controlled super-Gaussian mirrors, 0000 (2 May 1994); doi: 10.1117/12.174989
Integrated Optical Devices II
Proc. SPIE 2150, High-finesse silicon Fabry-Perot optical intensity modulator fabricated by merged epitaxial lateral overgrowth, 0000 (2 May 1994); doi: 10.1117/12.174990
Proc. SPIE 2150, Novel architecture for wide free-spectral range optical resonator for frequency division multiplexing transmission systems, 0000 (2 May 1994); doi: 10.1117/12.174991
Proc. SPIE 2150, Design and fabrication of rib ARROW couplers, 0000 (2 May 1994); doi: 10.1117/12.174992
Proc. SPIE 2150, Vertical coupling between D-fiber and buried rectangular waveguide: an accurate analysis by vectorial finite element method, 0000 (2 May 1994); doi: 10.1117/12.174993
Proc. SPIE 2150, Wide sideband generation by quasi-velocity-matched electro-optic modulator using periodic domain inversion, 0000 (2 May 1994); doi: 10.1117/12.174994
Integrated Optical Devices III
Proc. SPIE 2150, Fault-tolerant switches for photonic networks, 0000 (2 May 1994); doi: 10.1117/12.174995
Proc. SPIE 2150, Index profile reconstruction of Ti:LiNbO3 structures and bending loss evaluation from near-field measurements, 0000 (2 May 1994); doi: 10.1117/12.174997
Proc. SPIE 2150, Design of cascaded gratings to be used in out-of-plane signal processing, 0000 (2 May 1994); doi: 10.1117/12.174998
Proc. SPIE 2150, Optical receiver for IM-DD systems operating at 2.488 Gbit/s, 0000 (2 May 1994); doi: 10.1117/12.174999
Waveguide Technologies
Proc. SPIE 2150, Optical and electro-optical properties of H:LiTaO3 waveguides, 0000 (2 May 1994); doi: 10.1117/12.175000
Proc. SPIE 2150, Antiresonant reflecting optical waveguides based on solution-deposited multilayer structures, 0000 (2 May 1994); doi: 10.1117/12.175001
Proc. SPIE 2150, Photoinduced chi recording in two- and multicomponent lead-silicate glasses for optical waveguides, 0000 (2 May 1994); doi: 10.1117/12.175002
Proc. SPIE 2150, Fabrication and characteristics of rf magnetron-sputtered ITO thin films, 0000 (2 May 1994); doi: 10.1117/12.175003
Proc. SPIE 2150, Effect of ion exchange on luminescence properties of neodimium in surface layer of glasses, 0000 (2 May 1994); doi: 10.1117/12.175005
Proc. SPIE 2150, Structural and optical properties of proton-exchanged lithium tantalate waveguides, 0000 (2 May 1994); doi: 10.1117/12.175006
Proc. SPIE 2150, High-index LiTaO3 optical waveguides with controlling birefringence prepared by nonisovalent ion exchange, 0000 (2 May 1994); doi: 10.1117/12.175007
Semiconductor Devices and Circuits III
Proc. SPIE 2150, Basic scheme of an all-optical adder, 0000 (2 May 1994); doi: 10.1117/12.175008
Integrated Optical Devices II
Proc. SPIE 2150, Evanescent field thin-film optical amplifier, 0000 (2 May 1994); doi: 10.1117/12.175009
Waveguide Technologies
Proc. SPIE 2150, Attenuation of light in polymeric Langmuir-Blodgett and spin-coated films, 0000 (2 May 1994); doi: 10.1117/12.175010
Integrated Optical Devices III
Proc. SPIE 2150, Characterization of lithium niobate electro-optic modulators at cryogenic temperatures, 0000 (2 May 1994); doi: 10.1117/12.175011
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