PROCEEDINGS VOLUME 2172
IS&T/SPIE 1994 INTERNATIONAL SYMPOSIUM ON ELECTRONIC IMAGING: SCIENCE AND TECHNOLOGY | 6-10 FEBRUARY 1994
Charge-Coupled Devices and Solid State Optical Sensors IV
IN THIS VOLUME

0 Sessions, 21 Papers, 0 Presentations
IS&T/SPIE 1994 INTERNATIONAL SYMPOSIUM ON ELECTRONIC IMAGING: SCIENCE AND TECHNOLOGY
6-10 February 1994
San Jose, CA, United States
New Sensor Technologies
Proc. SPIE 2172, CIVIS sensor: a flexible smart imager with programmable resolution, 0000 (1 May 1994); doi: 10.1117/12.172755
Proc. SPIE 2172, Lattice-gate CCDs, 0000 (1 May 1994); doi: 10.1117/12.172764
Proc. SPIE 2172, Progress in CMOS active pixel image sensors, 0000 (1 May 1994); doi: 10.1117/12.172769
Proc. SPIE 2172, Image sensor with image smoothing capability using a neuron MOSFET, 0000 (1 May 1994); doi: 10.1117/12.172770
Proc. SPIE 2172, Assessment of image sensor technology for future NASA missions, 0000 (1 May 1994); doi: 10.1117/12.172771
Proc. SPIE 2172, Interline CCD imaging array with on-chip A/D conversion, 0000 (1 May 1994); doi: 10.1117/12.172772
Proc. SPIE 2172, Simple model of electron-bombarded CCD gain, 0000 (1 May 1994); doi: 10.1117/12.172773
High-Frame-Rate Sensors
Proc. SPIE 2172, Performance of high-frame-rate, back-illuminated CCD imagers, 0000 (1 May 1994); doi: 10.1117/12.172774
Proc. SPIE 2172, Multiport backside-illuminated CCD imagers for high-frame-rate camera applications, 0000 (1 May 1994); doi: 10.1117/12.172775
Proc. SPIE 2172, High-speed, high-performance 1M pixel imager for machine vision applications, 0000 (1 May 1994); doi: 10.1117/12.172756
Proc. SPIE 2172, High-frame-rate CCD imager with nonlinear charge sampling, 0000 (1 May 1994); doi: 10.1117/12.172757
Large Area Devices
Proc. SPIE 2172, Imaging with page-sized A-Si:H two-dimensional sensor arrays, 0000 (1 May 1994); doi: 10.1117/12.172758
Proc. SPIE 2172, Contact-type color image sensor using color phototransistors, 0000 (1 May 1994); doi: 10.1117/12.172759
Proc. SPIE 2172, Thinned 4096x4096 CCD mosaic, 0000 (1 May 1994); doi: 10.1117/12.172760
Proc. SPIE 2172, Evaluation of a charge injection device array, 0000 (1 May 1994); doi: 10.1117/12.172761
Proc. SPIE 2172, Radiation tolerant CID imager, 0000 (1 May 1994); doi: 10.1117/12.172762
Proc. SPIE 2172, 4Kx2K pixel three-side buttable CCD imager design and fabrication, 0000 (1 May 1994); doi: 10.1117/12.172763
Proc. SPIE 2172, Characterization of a 4Kx2K three side buttable CCD, 0000 (1 May 1994); doi: 10.1117/12.172765
Proc. SPIE 2172, High-frame-rate, motion-compensated 25.4 megapixel image sensor, 0000 (1 May 1994); doi: 10.1117/12.172766
High-Frame-Rate Sensors
Proc. SPIE 2172, Trilinear, 32-stage, selectable TDI CCD image sensor for high-resolution color scanning applications, 0000 (1 May 1994); doi: 10.1117/12.172767
New Sensor Technologies
Proc. SPIE 2172, Characterization and modeling of CCD devices on high-resistivity silicon substrates, 0000 (1 May 1994); doi: 10.1117/12.172768
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