PROCEEDINGS VOLUME 2196
SPIE'S 1994 SYMPOSIUM ON MICROLITHOGRAPHY | 27 FEBRUARY - 4 MARCH 1994
Integrated Circuit Metrology, Inspection, and Process Control VIII
SPIE'S 1994 SYMPOSIUM ON MICROLITHOGRAPHY
27 February - 4 March 1994
San Jose, CA, United States
Optical Metrology
Proc. SPIE 2196, 16 MB DRAM trench depth characterization using dome scatterometry, 0000 (1 May 1994); doi: 10.1117/12.174118
Proc. SPIE 2196, Effects of dissimilar materials on submicron linewidth measurements from phase images, 0000 (1 May 1994); doi: 10.1117/12.174137
Proc. SPIE 2196, Development of a deep-UV Mirau correlation microscope, 0000 (1 May 1994); doi: 10.1117/12.174156
SEM Metrology I
Proc. SPIE 2196, Near-field optical microscopy characterization of IC metrology, 0000 (1 May 1994); doi: 10.1117/12.174165
Proc. SPIE 2196, New submicron dimension reference for electron-beam metrology system, 0000 (1 May 1994); doi: 10.1117/12.174166
Proc. SPIE 2196, Monte Carlo model for SEM linewidth metrology, 0000 (1 May 1994); doi: 10.1117/12.174167
Proc. SPIE 2196, Enhanced precision CD measurements via topographic modeling, 0000 (1 May 1994); doi: 10.1117/12.174168
Proc. SPIE 2196, Ultrahigh resolution in-lens type wafer inspection system, 0000 (1 May 1994); doi: 10.1117/12.174119
SEM Metrology II
Proc. SPIE 2196, Critical dimension measurement in the SEM: comparison of backscattered vs. secondary electron detection, 0000 (1 May 1994); doi: 10.1117/12.174120
Proc. SPIE 2196, CD-SEM metrology using BSE detection, 0000 (1 May 1994); doi: 10.1117/12.174121
Proc. SPIE 2196, Low-loss electron imaging and its application to critical dimension metrology, 0000 (1 May 1994); doi: 10.1117/12.174122
Proc. SPIE 2196, Design for a high precision, high accuracy SEM stage for metrology and review, 0000 (1 May 1994); doi: 10.1117/12.174123
Particle and Defect Metrology
Proc. SPIE 2196, Die-to-database inspection and defect specification, 0000 (1 May 1994); doi: 10.1117/12.174124
Proc. SPIE 2196, Timely identification of yield-limiting defects through in-line automated inspection of wafers, 0000 (1 May 1994); doi: 10.1117/12.174125
Proc. SPIE 2196, Limits of laser scattering defect inspection tools on patterned wafers, 0000 (1 May 1994); doi: 10.1117/12.174126
Proc. SPIE 2196, Effects on IC quality of 5X reticle repair using FIB with stain reduction, 0000 (1 May 1994); doi: 10.1117/12.174127
Lithographic Process Control I
Proc. SPIE 2196, Quantitive analysis of the proximity effect in optical lithographic process, 0000 (1 May 1994); doi: 10.1117/12.174128
Proc. SPIE 2196, EDMES: an expert system for process optimization in microlithography, 0000 (1 May 1994); doi: 10.1117/12.174129
Proc. SPIE 2196, Process control for 0.25 um GaAs microwave monolithic integrated circuits, 0000 (1 May 1994); doi: 10.1117/12.174130
Proc. SPIE 2196, Advanced photolithographic process modeling and characterization via wafer flatness measurements, 0000 (1 May 1994); doi: 10.1117/12.174131
Lithographic Process Control II
Proc. SPIE 2196, Two-dimensional in-situ e-beam intensity profile monitoring method for SEM/EBL test system, 0000 (1 May 1994); doi: 10.1117/12.174132
Proc. SPIE 2196, Diagnostic monitoring procedure for automated measurement systems, 0000 (1 May 1994); doi: 10.1117/12.174133
Proc. SPIE 2196, Fourier analysis determination of best focus in submicron lithography, 0000 (1 May 1994); doi: 10.1117/12.174134
Proc. SPIE 2196, 0.35-micron DUV lithography for poly gate layer, 0000 (1 May 1994); doi: 10.1117/12.174135
Proc. SPIE 2196, New directions in process control, 0000 (1 May 1994); doi: 10.1117/12.174136
Registration and Overlay I
Proc. SPIE 2196, Process-induced effects on the intrafield overlay error, 0000 (1 May 1994); doi: 10.1117/12.174138
Proc. SPIE 2196, Moire interferometric alignment and overlay techniques, 0000 (1 May 1994); doi: 10.1117/12.174139
Proc. SPIE 2196, Strategies for characterizing and optimizing overlay metrology on extremely difficult layers, 0000 (1 May 1994); doi: 10.1117/12.174140
Proc. SPIE 2196, Overlay sample plan optimization for the detection of higher order contributions to misalignment, 0000 (1 May 1994); doi: 10.1117/12.174141
Modeling
Proc. SPIE 2196, Steady state particle motion in a single wafer reactor, 0000 (1 May 1994); doi: 10.1117/12.174142
Proc. SPIE 2196, Photochemical batches: E0 modelling and applications, 0000 (1 May 1994); doi: 10.1117/12.174143
Proc. SPIE 2196, Thermal design methodology of hot and chill plates for photolithography, 0000 (1 May 1994); doi: 10.1117/12.174144
Proc. SPIE 2196, Technique for the measurement of the in-situ development rate, 0000 (1 May 1994); doi: 10.1117/12.174145
Proc. SPIE 2196, Extraction of process specific photolithography model parameters, 0000 (1 May 1994); doi: 10.1117/12.174146
Proc. SPIE 2196, On-line photolithography modeling using spectrophotometry and Prolith/2, 0000 (1 May 1994); doi: 10.1117/12.174147
Registration, Overlay, and Electrical Metrology
Proc. SPIE 2196, Low-complexity subspace-based estimation of axis of symmetry for lithographic alignment, 0000 (1 May 1994); doi: 10.1117/12.174148
Proc. SPIE 2196, Electrical test structure for overlay metrology referenced to absolute length standards, 0000 (1 May 1994); doi: 10.1117/12.174149
Proc. SPIE 2196, Optimum-forced current for electrical linewidth measurements of submicron features, 0000 (1 May 1994); doi: 10.1117/12.174150
Current Issues in Metrology
Proc. SPIE 2196, ISO 9000: What every microlithographer should know, 0000 (1 May 1994); doi: 10.1117/12.174151
Particle and Defect Metrology
Proc. SPIE 2196, Comprehensive detection of defects on reduction reticles, 0000 (1 May 1994); doi: 10.1117/12.174152
Optical Metrology
Proc. SPIE 2196, Algorithm for submicron optical metrology optimization with combined illumination techniques, 0000 (1 May 1994); doi: 10.1117/12.174153
Particle and Defect Metrology
Proc. SPIE 2196, Signal processing techniques for defect inspection of distorted patterned wafers, 0000 (1 May 1994); doi: 10.1117/12.174154
Proc. SPIE 2196, Printability of submicron 5X reticle defects at G-line, I-line, and deep UV exposure wavelengths, 0000 (1 May 1994); doi: 10.1117/12.174155
Modeling
Proc. SPIE 2196, Effect of resist processes on dimensional control of submicron polysilicon gate structures, 0000 (1 May 1994); doi: 10.1117/12.174157
SEM Metrology II
Proc. SPIE 2196, Advantages of pulse counting in microchannel plate detectors, 0000 (1 May 1994); doi: 10.1117/12.174158
Lithographic Process Control II
Proc. SPIE 2196, Metrology sensors for advanced resists, 0000 (1 May 1994); doi: 10.1117/12.174159
Optical Metrology
Proc. SPIE 2196, Developed photoresist metrology using scatterometry, 0000 (1 May 1994); doi: 10.1117/12.174160
Registration and Overlay I
Proc. SPIE 2196, "On wafer" measurement of mask-induced overlay error, 0000 (1 May 1994); doi: 10.1117/12.174161
Lithographic Process Control II
Proc. SPIE 2196, Use of scatterometric latent-image detector in closed-loop feedback control of linewidth, 0000 (1 May 1994); doi: 10.1117/12.174162
SEM Metrology II
Proc. SPIE 2196, AFM application on the topography study of stack cell DRAM processes, 0000 (1 May 1994); doi: 10.1117/12.174163
Proc. SPIE 2196, Instrument for calibrating atomic force microscope standards, 0000 (1 May 1994); doi: 10.1117/12.174164
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