PROCEEDINGS VOLUME 2197
SPIE'S 1994 SYMPOSIUM ON MICROLITHOGRAPHY | 27 FEBRUARY - 4 MARCH 1994
Optical/Laser Microlithography VII
SPIE'S 1994 SYMPOSIUM ON MICROLITHOGRAPHY
27 February - 4 March 1994
San Jose, CA, United States
Optimal Illumination
Proc. SPIE 2197, Overlay and lens distortion in a modified illumination stepper, 0000 (17 May 1994); doi: 10.1117/12.175404
Proc. SPIE 2197, Zone-by-zone optimization of the dummy diffraction mask with auxiliary phase gratings, 0000 (17 May 1994); doi: 10.1117/12.175415
Proc. SPIE 2197, Effective light source optimization with the modified beam for depth-of-focus enhancements, 0000 (17 May 1994); doi: 10.1117/12.175425
Proc. SPIE 2197, Optimization of modified illumination for 0.25-um resist patterning, 0000 (17 May 1994); doi: 10.1117/12.175436
Proc. SPIE 2197, Characteristics of standing-wave effect of off-axis illumination depending on two different resist systems and the polarization effect of stepper, 0000 (17 May 1994); doi: 10.1117/12.175447
Proc. SPIE 2197, Quarter-micrometer i-line lithography using an alternating phase-shift mask, 0000 (17 May 1994); doi: 10.1117/12.175457
Proc. SPIE 2197, Improvement of the focus exposure latitude using optimized illumination and mask design, 0000 (17 May 1994); doi: 10.1117/12.175467
PSM Technology
Proc. SPIE 2197, Optimization of the optical phase shift in attenuated phase-shifting masks and application to quarter-micrometer deep-UV lithography for logics, 0000 (17 May 1994); doi: 10.1117/12.175476
Proc. SPIE 2197, Optimization of optical properties for single-layer halftone masks, 0000 (17 May 1994); doi: 10.1117/12.175486
Proc. SPIE 2197, Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO, and MoSiON film, 0000 (17 May 1994); doi: 10.1117/12.175405
Proc. SPIE 2197, Phase-shifter edge effects on attenuated phase-shifting mask image quality, 0000 (17 May 1994); doi: 10.1117/12.175406
Proc. SPIE 2197, Impact of attenuated mask topography on lithographic performance, 0000 (17 May 1994); doi: 10.1117/12.175407
Proc. SPIE 2197, Overcoming global topography and improving lithographic performance using a transmittance controlled mask, 0000 (17 May 1994); doi: 10.1117/12.175408
Proc. SPIE 2197, Combination of transmission and absorption mask for 0.3-um lithography, 0000 (17 May 1994); doi: 10.1117/12.175409
Proc. SPIE 2197, Effect of shifter edge angle and lens aberration on the pattern profile in the edge-line phase-shift method, 0000 (17 May 1994); doi: 10.1117/12.175410
Proc. SPIE 2197, Techniques for improving overlay on multilayer phase-shift masks, 0000 (17 May 1994); doi: 10.1117/12.175411
Proc. SPIE 2197, Fabrication of phase-shifting masks employing multilayer films, 0000 (17 May 1994); doi: 10.1117/12.175412
Proc. SPIE 2197, Attenuating phase-shift mask by thermal oxidation of chrome, 0000 (17 May 1994); doi: 10.1117/12.175413
Proc. SPIE 2197, Phase-shift mask issues for 193-nm lithography, 0000 (17 May 1994); doi: 10.1117/12.175414
Proc. SPIE 2197, Estimation of attenuated phase-shifting mask fabrication latitude using an optical exposure-defocus methodology, 0000 (17 May 1994); doi: 10.1117/12.175416
Proc. SPIE 2197, Effects of transparent and transmission reduction reticle defects, 0000 (17 May 1994); doi: 10.1117/12.175417
Proc. SPIE 2197, Experimental study of phase-shifting mask defect detection using phase-shifting interferometry, 0000 (17 May 1994); doi: 10.1117/12.175418
Proc. SPIE 2197, Fundamental analysis on fabrication of 256-MB DRAM using phase-shift mask technology, 0000 (17 May 1994); doi: 10.1117/12.175419
Proc. SPIE 2197, Comparison of phase-shift mask types for submicrometer contact hole definition, 0000 (17 May 1994); doi: 10.1117/12.175420
Proc. SPIE 2197, Exposure of a halftone mask by conventional and off-axis illumination, 0000 (17 May 1994); doi: 10.1117/12.175421
Pattern Proximity Correction
Proc. SPIE 2197, Automated optical proximity correction: a rules-based approach, 0000 (17 May 1994); doi: 10.1117/12.175422
Proc. SPIE 2197, Fast proximity correction with zone sampling, 0000 (17 May 1994); doi: 10.1117/12.175423
Proc. SPIE 2197, Automated determination of CAD layout failures through focus: experiment and simulation, 0000 (17 May 1994); doi: 10.1117/12.175424
Proc. SPIE 2197, Phase-shifting masks: automated design and mask requirements, 0000 (17 May 1994); doi: 10.1117/12.175426
Proc. SPIE 2197, Comparative study on optical proximity effect correction with various types of dummy patterns and its application to DRAM devices, 0000 (17 May 1994); doi: 10.1117/12.175427
Proc. SPIE 2197, Investigation of proximity effects for a rim phase-shifting mask printed with annular illumination, 0000 (17 May 1994); doi: 10.1117/12.175428
Proc. SPIE 2197, Large-area phase-shift mask design, 0000 (17 May 1994); doi: 10.1117/12.175429
Proc. SPIE 2197, Correcting for proximity effect widens process latitude, 0000 (17 May 1994); doi: 10.1117/12.175430
Proc. SPIE 2197, Using behavior modeling for proximity correction, 0000 (17 May 1994); doi: 10.1117/12.175431
Proc. SPIE 2197, Systematic design of phase-shifting masks, 0000 (17 May 1994); doi: 10.1117/12.175432
Lithographic Performance
Proc. SPIE 2197, Comparison of I-line and deep-UV technologies for 0.35-um lithography, 0000 (17 May 1994); doi: 10.1117/12.175433
Proc. SPIE 2197, Aerial image analysis of quarter-micrometer patterns on a 0.5-NA excimer stepper, 0000 (17 May 1994); doi: 10.1117/12.175434
Proc. SPIE 2197, Practical 0.35-um i-line lithography, 0000 (17 May 1994); doi: 10.1117/12.175435
Proc. SPIE 2197, Lithographic performance at sub-300-nm design rules using a high-NA I-line stepper with optimized NA and (sigma) in conjunction with advanced PSM technology, 0000 (17 May 1994); doi: 10.1117/12.175437
Proc. SPIE 2197, Optimizing numerical aperture and partial coherence to reduce proximity effect in deep-UV lithography, 0000 (17 May 1994); doi: 10.1117/12.175438
Image Simulation
Proc. SPIE 2197, Aerial image of 3D phase-shifted reticle: 3D fast aerial image model, 0000 (17 May 1994); doi: 10.1117/12.175439
Proc. SPIE 2197, Some image modeling issues for I-line, 5X phase-shifting masks, 0000 (17 May 1994); doi: 10.1117/12.175440
Proc. SPIE 2197, Experimental verification of high-numerical-aperture effects in photoresist, 0000 (17 May 1994); doi: 10.1117/12.175441
Proc. SPIE 2197, Sample-3D benchmarks including high-NA and thin-film effects, 0000 (17 May 1994); doi: 10.1117/12.175442
Proc. SPIE 2197, Evaluation of new attenuating phase-shifting mask techniques, 0000 (17 May 1994); doi: 10.1117/12.175443
Proc. SPIE 2197, Enhanced lumped parameter model for photolithography, 0000 (17 May 1994); doi: 10.1117/12.175444
Proc. SPIE 2197, Programming of phase-shift mask simulation software and some important aspects, 0000 (17 May 1994); doi: 10.1117/12.175445
Proc. SPIE 2197, Polarization and edge effects in photolithographic masks using three-dimensional rigorous simulation, 0000 (17 May 1994); doi: 10.1117/12.175446
Aerial Image Measurement
Proc. SPIE 2197, New mask evaluation tool: the microlithography simulation microscope aerial image measurement system, 0000 (17 May 1994); doi: 10.1117/12.175448
Proc. SPIE 2197, Quantitative stepper metrology using the focus monitor test mask, 0000 (17 May 1994); doi: 10.1117/12.175449
Proc. SPIE 2197, Analyzing deep-UV lens aberrations using aerial image and latent image metrologies, 0000 (17 May 1994); doi: 10.1117/12.175450
Proc. SPIE 2197, Scattered light in photolithographic lenses, 0000 (17 May 1994); doi: 10.1117/12.175451
Proc. SPIE 2197, Application of the aerial image measurement system (AIMS)TM to the analysis of binary mask imaging and resolution enhancement techniques, 0000 (17 May 1994); doi: 10.1117/12.175452
Proc. SPIE 2197, Aerial image measurements on a commercial stepper, 0000 (17 May 1994); doi: 10.1117/12.175453
Application to Devices
Proc. SPIE 2197, Application of subresolution phase-shift mask with G-line stepper for sub-half-micrometer gate GaAs circuits, 0000 (17 May 1994); doi: 10.1117/12.175454
Proc. SPIE 2197, Comprehensive evaluation of major phase-shift mask technologies for isolated gate structures in logic designs, 0000 (17 May 1994); doi: 10.1117/12.175455
Proc. SPIE 2197, I-line photoresist evaluations for contact hole performance with attenuated phase-shift reticles, 0000 (17 May 1994); doi: 10.1117/12.175456