PROCEEDINGS VOLUME 2254
PHOTOMASK JAPAN '94 | 22-22 APRIL 1994
Photomask and X-Ray Mask Technology
PHOTOMASK JAPAN '94
22-22 April 1994
Kawasaki City, Kanagawa, Japan
Mask Fabrication
Proc. SPIE 2254, Ever-increasing role of mask technology in deep submicron lithography, 0000 (3 November 1994); doi: 10.1117/12.191918
Proc. SPIE 2254, Practical method of phase-shifting mask fabrication, 0000 (3 November 1994); doi: 10.1117/12.191927
Proc. SPIE 2254, Masks for 0.25-um lithography, 0000 (3 November 1994); doi: 10.1117/12.191936
Proc. SPIE 2254, New method of CD control for 64 Mbit-DRAM reticles, 0000 (3 November 1994); doi: 10.1117/12.191946
Proc. SPIE 2254, New novolak-based positive EB resist, EBR(reg.)-900 M-1, 0000 (3 November 1994); doi: 10.1117/12.191956
Phase-shift Mask I
Proc. SPIE 2254, Attenuated phase-shift mask blanks with oxide or oxinitride of Cr or MoSi absorptive shifter, 0000 (3 November 1994); doi: 10.1117/12.191962
Proc. SPIE 2254, Attenuated phase-shifting photomasks fabricated from Cr-based embedded shifter blanks, 0000 (3 November 1994); doi: 10.1117/12.191963
Proc. SPIE 2254, Development of novel W/Si materials for the single-layered attenuated phase-shifting mask, 0000 (3 November 1994); doi: 10.1117/12.191964
Proc. SPIE 2254, Large-area optical design rule checker for logic PSM application, 0000 (3 November 1994); doi: 10.1117/12.191965
Masks for X-ray and E-beam I
Proc. SPIE 2254, SR irradiation stability of x-ray mask, 0000 (3 November 1994); doi: 10.1117/12.191919
Proc. SPIE 2254, Development of Si frame-mounting x-ray masks, 0000 (3 November 1994); doi: 10.1117/12.191920
Proc. SPIE 2254, Printability of organic defects on an x-ray mask, 0000 (3 November 1994); doi: 10.1117/12.191921
Proc. SPIE 2254, Silicon shaping mask for electron-beam cell projection lithography, 0000 (3 November 1994); doi: 10.1117/12.191922
Metrology and Equipment
Proc. SPIE 2254, Supporting 256-Mb and 1-Gb DRAM mask-making requirements with the Lepton EBES4 e-beam reticle generator, 0000 (3 November 1994); doi: 10.1117/12.191923
Proc. SPIE 2254, EB-X1: an accurate x-ray mask writer using a variable-shaped beam, 0000 (3 November 1994); doi: 10.1117/12.191924
Proc. SPIE 2254, Next generation mask coordinate measuring technology, 0000 (3 November 1994); doi: 10.1117/12.191925
Proc. SPIE 2254, Focused ion beams for x-ray mask repair, 0000 (3 November 1994); doi: 10.1117/12.191926
Photomask Process and Materials
Proc. SPIE 2254, Development of 0.35-um generation reticles using advanced mask blanks, 0000 (3 November 1994); doi: 10.1117/12.191928
Proc. SPIE 2254, Fabrication and pattern transfer of optical proximity correction (OPC) mask, 0000 (3 November 1994); doi: 10.1117/12.191929
Proc. SPIE 2254, Possibility of real-time proximity effect correction for reticle writing, 0000 (3 November 1994); doi: 10.1117/12.191930
Proc. SPIE 2254, Analysis of mask distortion induced by heating during e-beam writing, 0000 (3 November 1994); doi: 10.1117/12.191931
Proc. SPIE 2254, MEBES IV position accuracy improvement on the 5-inch mask, 0000 (3 November 1994); doi: 10.1117/12.191932
Proc. SPIE 2254, New mask optimization methodology using exposure-defocus and mask fabrication latitude, 0000 (3 November 1994); doi: 10.1117/12.191933
Proc. SPIE 2254, Poly(cyclohexyl 2-cyanoacrylate-co-ethoxyethyl 2-cyanoacrylate) as a positive-tone electron beam resist for phase-shift mask fabrication, 0000 (3 November 1994); doi: 10.1117/12.191934
Phase-shift mask II
Proc. SPIE 2254, Manufacturing of half-tone phase-shift masks I: blank, 0000 (3 November 1994); doi: 10.1117/12.191935
Proc. SPIE 2254, Manufacturing of half-tone phase-shift masks II: writing and process, 0000 (3 November 1994); doi: 10.1117/12.191937
Proc. SPIE 2254, Manufacturing of half-tone phase-shift masks III: inspection, repair, and quality assurance, 0000 (3 November 1994); doi: 10.1117/12.191938
Proc. SPIE 2254, Development of practical attenuated phase-shifting mask, 0000 (3 November 1994); doi: 10.1117/12.191939
Proc. SPIE 2254, Topography effect in half-tone phase-shift mask for window formation, 0000 (3 November 1994); doi: 10.1117/12.191940
Proc. SPIE 2254, Phase measurement system with transmitted UV light for phase-shifting mask inspection, 0000 (3 November 1994); doi: 10.1117/12.191941
Masks for X-ray and E-beam II
Proc. SPIE 2254, Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system, 0000 (3 November 1994); doi: 10.1117/12.191942
Proc. SPIE 2254, Optical properties of polycrystalline <beta>-SiC membrane for x-ray mask, 0000 (3 November 1994); doi: 10.1117/12.191943
Proc. SPIE 2254, X-ray mask distortion induced by final back-etching process, 0000 (3 November 1994); doi: 10.1117/12.191944
Proc. SPIE 2254, X-ray mask for optical heterodyne alignment, 0000 (3 November 1994); doi: 10.1117/12.191945
Inspection, Repair, and Metrology
Proc. SPIE 2254, Sub-halfmicron lithography mask metrology: matching of the optical and mask system, 0000 (3 November 1994); doi: 10.1117/12.191947
Proc. SPIE 2254, Using the Leitz LMS 2000 for monitoring and improvement of an e-beam, 0000 (3 November 1994); doi: 10.1117/12.191948
Proc. SPIE 2254, Advanced die-to-database reticle machine for 64-Mbit DRAMs, 0000 (3 November 1994); doi: 10.1117/12.191949
Proc. SPIE 2254, Application of conventional defect repair technique to phase-shifting masks, 0000 (3 November 1994); doi: 10.1117/12.191950
Cleaning and Pelliclization
Proc. SPIE 2254, Ultra-clean fabrication techniques, 0000 (3 November 1994); doi: 10.1117/12.191951
Proc. SPIE 2254, Evolution of pellicles, 0000 (3 November 1994); doi: 10.1117/12.191952
Proc. SPIE 2254, Development of the pellicle for KrF excimer laser photolithography, 0000 (3 November 1994); doi: 10.1117/12.191953
Design automation
Proc. SPIE 2254, Data preparation for CORE system in a MEBES environment, 0000 (3 November 1994); doi: 10.1117/12.191954
Proc. SPIE 2254, Novel defect inspection method for the LSI mask pattern data, 0000 (3 November 1994); doi: 10.1117/12.191955
Equipment
Proc. SPIE 2254, Subresolution artifacts optimized for use with Canon's CQUEST illumination system, and their cost effective realization using the Lepton EBES4 e-beam reticle generator, 0000 (3 November 1994); doi: 10.1117/12.191957
Proc. SPIE 2254, State-of-the-art material handler for the EBES4 e-beam reticle generator: key contributor to accuracy, 0000 (3 November 1994); doi: 10.1117/12.191958
Proc. SPIE 2254, Soft-handed vacuum chuck, 0000 (3 November 1994); doi: 10.1117/12.191959
Proc. SPIE 2254, Newly developed mask observation SEM JWS-7800, 0000 (3 November 1994); doi: 10.1117/12.191960
Proc. SPIE 2254, MEBES(reg.) reticle writers for 350-nm and 250-nm design rules, 0000 (3 November 1994); doi: 10.1117/12.191961
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